Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

A Novel Synthesis of ZnO Nanoflower Arrays Using a Lift-Off Technique with Different Thicknesses of Al Sacrificial Layers on a Patterned Sapphire Substrate

A novel method to synthesize large-scale ZnO nanoflower arrays using a protrusion patterned ZnO seed layer was investigated. Different thicknesses of aluminum (Al) film were deposited on the concave patterned sapphire substrate as a sacrificial layer. ZnO gel was layered onto the Al film as a seed layer and OE-6370HF AB optical glue was used as the adhesive material. A lift-off technique was used to transfer the protrusion patterned ZnO/AB glue seed layer to a P-type Si <100> wafer. The hydrothermal method using Zn(CH₃COO)₂ and C₆H₁₂N₄ solutions as liquid precursors was used to synthesize ZnO nanoflower arrays on the patterned seed layer. X-ray diffraction spectra, field-effect scanning electron microscopy, focused ion beam milling (for obtaining cross-sectional views), and photoluminescence (PL) spectrometry were used to analyze the effects that different synthesis times and different thicknesses of Al sacrificial layer had on the properties of ZnO nanoflower arrays. These effects included an increased diameter, and a decreased height, density (i.e., number of nanorods in μm⁻²), total surface area, total volume, and maximum emission intensity of PL spectrum. We showed that when the synthesis time and the thickness of the Al sacrificial layer were increased, the emission intensities of the ultraviolet light and visible light had different variations.

Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon

The luminescent properties of zinc oxide (ZnO) and nanostructured porous silicon (PSi) make these materials very appealing for photoemission applications. The current study reports on the fabrication of a composite of ZnO and nanostructured porous silicon micropatterns (ZnO + PSi micropatterns) onto heavily-doped silicon surfaces. The proposed composite micropattern is devoted to the future development of light-emitting diodes. The fabrication of the ZnO + PSi micropatterns was carried out in a two–step process. (1) A regular hexagonal micropattern of a photoresist/ZnO stack was fabricated by UV lithography on crystalline silicon substrates. (2) Before being lifted off the photoresist, nanostructured PSi micropatterns were fabricated by electrochemically etching the exposed areas of the silicon substrate. Subsequently, wet etching of the photoresist was carried out for the final development of the composite ZnO and PSi micropatterns. Further, thin films of ZnO and nanostructured PSi layers were characterized. In particular, their photoluminescent properties were analyzed, as well as their morphology and composition. The experimental PL results show that the ZnO layers have emission broadbands centered at (2.63 eV, blue), while the PSi layers show a band centered at (1.71 eV, red). Further, the emission peaks from the PSi layers can be tuned by changing their fabrication conditions. It was observed that the properties of the ZnO thin films are not influenced by either the surface morphology of PSi or by its PL emissions. Therefore, the PL properties of the composite ZnO + PSi micropatterns are equivalent to those featuring the addition of PSi layers and ZnO thin films. Accordingly, broadband optical emissions are expected to arise from a combination between the ZnO layer (blue band) and PSi (red band). Furthermore, the electrical losses associated with the PSi areas can be greatly reduced since ZnO is in contact with the Si surface. As a result, the proposed composite micropatterns might be attractive for many solid-state lighting applications, such as light-emitting diodes.