Computational Predictions and Microwave Plasma Synthesis of Superhard Boron-Carbon Materials

Discovering Superhard B-N-O Compounds by Iterative Machine Learning and Evolutionary Structure Predictions

We searched for new superhard B-N-O compounds with an iterative machine learning (ML) procedure, where ML models are trained using sample crystal structures from an evolutionary algorithm. We first used cohesive energy to evaluate the thermodynamic stability of varying B _x N _y O _z compositions and then gradually focused on compositional regions with high cohesive energy and high hardness. The results converged quickly after a few iterations. Our resulting ML models show that B _x+2N _x O₃ compounds with x ≥ 3 (like B₅N₃O₃, B₆N₄O₃, etc.) are potentially superhard and thermodynamically favorable. Our meta-GGA density functional theory calculations indicate that these materials are also wide bandgap (≥4.4 eV) insulators, with the valence band maximum related to the p-orbitals of nitrogen atoms near vacant sites. This study demonstrates that an iterative method combining ML and ab initio simulations provides a powerful tool for discovering novel materials.

First-Principles Predictions and Synthesis of B50C2 by Chemical Vapor Deposition

Density functional theory predictions have been combined with the microwave-plasma chemical vapor deposition technique to explore metastable synthesis of boron-rich boron-carbide materials. A thin film synthesis of high-hardness (up to 37 GPa) B₅₀C₂ via chemical vapor deposition was achieved. Characterization of the experimental crystal structure matches well with a new theoretical model structure, with carbon atoms inserted into the boron icosahedra and 2b sites in a α-tetragonal B₅₂ base structure. Previously reported metallic B₅₀C₂ structures with carbons inserted only into the 2b or 4c sites are found to be dynamically unstable. The newly predicted structure is insulating and dynamically stable, with a computed hardness value and electrical properties in excellent agreement with the experiment. The present study thus validates the density functional theory calculations of stable crystal structures in boron-rich boron-carbide system and provides a pathway for large-area synthesis of novel materials by the chemical vapor deposition method.

Modulating Band Gap of Boron Doping in Amorphous Carbon Nano-Film

Amorphous carbon (a-C) films are attracting considerable attention to due their large optical band gap (E_opt) range of 1–4 eV. But the hopping conducting mechanism of boron doping a-C (a-C:B) is still mysterious. To exploring the intrinsic reasons behind the semiconductor properties of a-C:B, in this work, the boron doping a-C (a-C:B) nano-film was prepared, and the growth rate and E_opt changing were analyzed by controlling the different experimental conditions of magnetron sputtering. A rapid deposition rate of 10.55 nm/min was obtained. The E_opt is reduced from 3.19 eV to 2.78 eV by improving the substrate temperature and sputtering power. The proportion of sp²/sp³ increasing was uncovered with narrowing the E_opt. The shrinking E_opt can be attributed to the fact that boron atoms act as a fluxing agent to promote carbon atoms to form sp² hybridization at low energy. Furthermore, boron atoms can impede the formation of σ bonds in carbon atom sp³ hybridization by forming B–C bonds with high energy, and induce the sp³ hybridization transfer to sp² hybridization. This work is significant to further study of amorphous semiconductor films.