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Slobodzyan D, Kushlyk M, Lys R, Shykorjak J, Luchechko A, Żyłka M, Żyłka W, Shpotyuk Y, Pavlyk B. Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers. MATERIALS 2022; 15:ma15124052. [PMID: 35744107 PMCID: PMC9227043 DOI: 10.3390/ma15124052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 05/26/2022] [Accepted: 06/02/2022] [Indexed: 12/04/2022]
Abstract
The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si−SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si−H3 complexes increases that of O3−Si−H.
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Affiliation(s)
- Dmytro Slobodzyan
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
- Correspondence: (D.S.); (Y.S.)
| | - Markiyan Kushlyk
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
| | - Roman Lys
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
| | - Josyp Shykorjak
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
| | - Andriy Luchechko
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
| | - Marta Żyłka
- Department of Aerospace Engineering, Rzeszow University of Technology, 8, Powstańców Warszawy Av., 35-959 Rzeszow, Poland;
| | - Wojciech Żyłka
- Institute of Materials Engineering, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszow, Poland;
| | - Yaroslav Shpotyuk
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
- Institute of Physics, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszow, Poland
- Correspondence: (D.S.); (Y.S.)
| | - Bohdan Pavlyk
- Deptartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; (M.K.); (R.L.); (J.S.); (A.L.); (B.P.)
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Li W, Wang J, Ding W, Gong Y, Chen H, Ju D. Exploring the Dual Characteristics of CH 3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface. Molecules 2021; 26:molecules26195824. [PMID: 34641368 PMCID: PMC8510491 DOI: 10.3390/molecules26195824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Revised: 09/08/2021] [Accepted: 09/09/2021] [Indexed: 11/29/2022] Open
Abstract
Metal atoms were deposited on an Si (111)-7 × 7 surface, and they were adsorbed with alcohol gases (CH3OH/C2H5OH/C3H7OH). Initially, CnH2n+1OH adsorption was simply used as an intermediate layer to prevent the chemical reaction between metal and Si atoms. Through scanning tunneling microscopy (STM) and a mass spectrometer, the CnH2n+1OH dissociation process is further derived as the construction of a surface quasi-potential with horizontal and vertical directions. With the help of three typical metal depositions, the surface characteristics of CH3OH adsorption are more clearly presented in this paper. Adjusting the preheating temperature, the difference of thermal stability between CH3O– and H+ could be obviously derived in Au deposition. After a large amount of H+ was separated, the isolation characteristic of CH3O– was discussed in the case of Fe deposition. In the process of building a new metal-CH3O–-H+ model, the dual characteristics of CH3OH were synthetically verified in Sn deposition. CH3O– adsorption is prone to influencing the interaction between the metal deposition and substrate surface in the vertical direction, while H+ adsorption determines the horizontal behavior of metal atoms. These investigations lead one to believe that, to a certain extent, the formation of regular metal atomic structures on the Si (111)-7 × 7-CH3OH surface is promoted, especially according to the dual characteristics and adsorption models we explored.
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Affiliation(s)
- Wenxin Li
- College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.L.); (J.W.); (Y.G.); (H.C.)
- Department of High-Tech Research Center, Saitama Institute of Technology, Fusaiji 1690, Fukaya 369-0293, Japan
| | - Jiawen Wang
- College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.L.); (J.W.); (Y.G.); (H.C.)
| | - Wanyu Ding
- School of Material Science and Engineering, Dalian Jiaotong University, Dalian 116028, China;
| | - Youping Gong
- College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.L.); (J.W.); (Y.G.); (H.C.)
| | - Huipeng Chen
- College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.L.); (J.W.); (Y.G.); (H.C.)
| | - Dongying Ju
- Department of High-Tech Research Center, Saitama Institute of Technology, Fusaiji 1690, Fukaya 369-0293, Japan
- Ningbo Haizhi Institute of Materials Industry Innovation, Ningbo 315000, China
- Correspondence:
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Abstract
Scanning tunneling microscope results showed that Au and Fe atoms were steamed on the Si (111)-(7 × 7) substrate surface, with or without the step region. The experimental comparison proved that the induced effect of the step region is a controllable process, which CH3OH can adjust. In this paper, the latest progress on the dynamic phenomenon on the step region is discussed, including three deposition types: strong deposition, weak deposition, and the new quasi deposition. With a relatively weak interaction between Au and Si atoms, the linearity of the weak deposition is present in the step region. In contrast, Fe atoms tend to form a strong deposition along the boundary line between the flat and step regions. Different depositions correspond to different surface potential energy: a newly formed surface is stabilized by a quasi-potential made by breaking, and a metal atomic structure can be stabilized by forming several quasi depositions. After discussing the good adsorption properties, CH3OH can be used as an intermediate layer on the step region. As an important result of quasi deposition, a regular linear Fe cluster structure is created, which is perpendicular to the boundary line.
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