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Rasadujjaman M, Zhang J, Spassky DA, Naumov S, Vishnevskiy AS, Vorotilov KA, Yan J, Zhang J, Baklanov MR. UV-Excited Luminescence in Porous Organosilica Films with Various Organic Components. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1419. [PMID: 37111004 PMCID: PMC10143820 DOI: 10.3390/nano13081419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Revised: 04/06/2023] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
UV-induced photoluminescence of organosilica films with ethylene and benzene bridging groups in their matrix and terminal methyl groups on the pore wall surface was studied to reveal optically active defects and understand their origin and nature. The careful selection of the film's precursors and conditions of deposition and curing and analysis of chemical and structural properties led to the conclusion that luminescence sources are not associated with the presence of oxygen-deficient centers, as in the case of pure SiO2. It is shown that the sources of luminescence are the carbon-containing components that are part of the low-k-matrix, as well as the carbon residues formed upon removal of the template and UV-induced destruction of organosilica samples. A good correlation between the energy of the photoluminescence peaks and the chemical composition is observed. This correlation is confirmed by the results obtained by the Density Functional theory. The photoluminescence intensity increases with porosity and internal surface area. The spectra become more complicated after annealing at 400 °C, although Fourier transform infrared spectroscopy does not show these changes. The appearance of additional bands is associated with the compaction of the low-k matrix and the segregation of template residues on the surface of the pore wall.
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Affiliation(s)
- Md Rasadujjaman
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
- Department of Physics, Mawlana Bhashani Science and Technology University, Santosh, Tangail 1902, Bangladesh
| | - Jinming Zhang
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Dmitry A. Spassky
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow 119991, Russia;
- Institute of Physics, University of Tartu, 50411 Tartu, Estonia
| | - Sergej Naumov
- Leibniz Institute of Surface Engineering (IOM), 04318 Leipzig, Germany;
| | - Alexey S. Vishnevskiy
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
| | - Konstantin A. Vorotilov
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
| | - Jiang Yan
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Jing Zhang
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Mikhail R. Baklanov
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
- European Centre for Knowledge and Technology Transfer (EUROTEX), 1040 Brussels, Belgium
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