The Effect of Grain Orientation of β-Sn on Copper Pillar Solder Joints during Electromigration

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

Molecular Dynamics Simulation of the Cu3Sn/Cu Interfacial Diffusion Mechanism under Electrothermal Coupling

With the increasing power density of electronic devices, solder joints are prone to electromigration under high currents, which results in a significant threat to reliability. In this study, the molecular dynamics method is used to study the diffusion mechanism of the Cu3Sn/Cu interface under the action of electrothermal coupling. The results show that the diffusion activation energy decreases with an increase in electric field intensity, accelerating the diffusion of the Cu3Sn/Cu interface. Furthermore, it is noted that the abrupt change in the vacancy-time curve lags behind that of the mean square displacement curve, which depicts that the responses of the vacancies are driven by the electric field. The vacancy-responsive diffusion mechanism of the Cu3Sn/Cu interface is proposed. The atoms around the interface in the electric field get rid of the shackles of the neighboring atoms easily. The vacancy concentration increases as the atoms leave the equilibrium position, which accelerates the movement of vacancies and enhances the diffusion of the Cu3Sn/Cu interface.

The Study of the Reliability of Complex Components during the Electromigration Process

With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black's equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely Cu₅Sn₆ to Cu₅Sn₆ and Cu₃Sn; the cracks can be detected at the Cu₃Sn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines.

Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints

Sn-rich solder joints in three-dimensional integrated circuits and their reliability issues, such as the electromigration (EM), thermomigration (TM), and thermomechanical fatigue (TMF), have drawn attention related to their use in electronic packaging. The Sn grain orientation is recognized as playing an important role in reliability issues due to its anisotropic diffusivity, mechanical properties, and coefficient of thermal expansion. This study reviews the effects of the Sn grain orientation on the EM, TM, and TMF in Sn-rich solder joints. The findings indicate that in spite of the failure modes dominated by the Sn grain orientation, the size and shape of the solder joint, as well as the Sn microstructures, such as the cycling twining boundary (CTB), single crystals, and misorientations of the Sn grain boundary, should be considered in more detail. In addition, we show that two methods, involving a strong magnetic field and seed crystal layers, can control the Sn grain orientations during the solidification of Sn-rich solder joints.