Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

2D Janus Polarization Functioned by Mechanical Force

2D polarization materials have emerged as promising candidates for meeting the demands of device miniaturization, attributed to their unique electronic configurations and transport characteristics. Although the existing inherent and sliding mechanisms are increasingly investigated in recent years, strategies for inducing 2D polarization with innovative mechanisms remain rare. This study introduces a novel 2D Janus state by modulating the puckered structure. Combining scanning probe microscopy, transmission electron microscopy, and density functional theory calculations, this work realizes force-triggered out-of-plane and in-plane dipoles with distorted smaller warping in GeSe. The Janus state is preserved after removing the external mechanical perturbation, which could be switched by modulating the sliding direction. This work offers a versatile method to break the space inversion symmetry in a 2D system to trigger polarization in the atomic scale, which may open an innovative insight into configuring novel 2D polarization materials.

Surface Effect of Thickness-Dependent Polarization and Domain Evolution in BiFeO3 Epitaxial Ultrathin Films

With the trend of device miniaturization, ultrathin ferroelectric films are gaining more and more attention. However, understanding ferroelectricity in this nanoscale context remains a formidable challenge, primarily due to the heightened relevance of surface effects, which often leads to the loss of net polarization. Here, the influence of surface effects on the polarization as a function of thickness in ultrathin BiFeO3 films is investigated using phase-field simulations. The findings reveal a notable increase in ferroelectric polarization with increasing thickness, with a particularly discernible change occurring below the 10 nm threshold. Upon accounting for surface effects, the polarization is marginally lower than the case without such considerations, with the disparity becoming more pronounced at smaller thicknesses. Moreover, the hysteresis loop and butterfly loop of the ultrathin film were simulated, demonstrating that the ferroelectric properties of films remain robust even down to a thickness of 5 nm. Our investigations provide valuable insights into the significance of ferroelectric thin films in device miniaturization.

Advancements in Nanoparticle Deposition Techniques for Diverse Substrates: A Review

Nanoparticle deposition on various substrates has gained significant attention due to the potential applications of nanoparticles in various fields. This review paper comprehensively analyzes different nanoparticle deposition techniques on ceramic, polymeric, and metallic substrates. The deposition techniques covered include electron gun evaporation, physical vapor deposition, plasma enriched chemical vapor deposition (PECVD), electrochemical deposition, chemical vapor deposition, electrophoretic deposition, laser metal deposition, and atomic layer deposition (ALD), thermophoretic deposition, supercritical deposition, spin coating, and dip coating. Additionally, the sustainability aspects of these deposition techniques are discussed, along with their potential applications in anti-icing, antibacterial power, and filtration systems. Finally, the review explores the importance of deposition purities in achieving optimal nanomaterial performance. This comprehensive review aims to provide valuable insights into state-of-the-art techniques and applications in the field of nanomaterial deposition.

Evolution from Lead-Based to Lead-Free Piezoelectrics: Engineering of Lattices, Domains, Boundaries, and Defects Leading to Giant Response

Piezoelectric materials are known to mankind for more than a century, with numerous advancements made in both scientific understandings and practical applications. In the last two decades, in particular, the research on piezoelectrics has largely been driven by the constantly changing technological demand, and the drive toward a sustainable society. Hence, environmental-friendly "lead-free piezoelectrics" have emerged in the anticipation of replacing lead-based counterparts with at least comparable performance. However, there are still obstacles to be overcome for realizing this objective, while the efforts in this direction already seem to culminate. Therefore, novel structural strategies need to be designed to address these issues and for further breakthrough in this field. Here, various strategies to enhance piezoelectric properties in lead-free systems with fundamental and historical context, and from atomic to macroscopic scale, are explored. The main challenges currently faced in the transition from lead-based to lead-free piezoelectrics are identified and key milestones for future research in this field are suggested. These include: i) decoding the fundamental mechanisms; ii) large temperature-stable piezoresponse; and iii) fabrication-friendly and tailorable composition. Strategic insights and general guidelines for the synergistic design of new piezoelectric materials for obtaining a large piezoelectric response are also provided.

Thickness-Dependent Domain Relaxation Dynamics Study in Epitaxial K0.5Na0.5NbO3 Ferroelectric Thin Films

We explored the time dependence of the nanoscale domain relaxation mechanism in epitaxial K_0.5Na_0.5NbO₃ (KNN) thin films grown on La_0.67Sr_0.33MnO₃/SrTiO₃ (001) substrates over the thickness range 20-80 nm using scanning probe microscopy. Kelvin probe force microscopy (KFM) and piezoresponse force microscopy were performed on pulsed-laser-deposition-deposited KNN thin films for studying the time evolution of trapped charges and polarized domains, respectively. The KFM data show that the magnitude and retention time of the surface potential are the maxima for 80 nm-thick film and reduce with the reduction in the film thickness. The charging and discharging of the samples reveal the easier and stronger electron trapping compared to hole trapping. This result further indicates the asymmetry between retention of the pulse-voltage-induced upward and downward domains. Furthermore, the time evolution of these ferroelectric nanodomains are found to obey stretched exponential behavior. The relaxation time (T) has been found to increase with increase in thickness; however, the corresponding stretched exponent (β) is reduced. Moreover, the written domain can retain for more than 2300 min in KNN thin films. An in-depth understanding of domain relaxation dynamics in Pb-free KNN thin films can bridge a path for future high-density memory applications.

Pyroelectric Properties of BaxSr(1-x)TiO3/PVDF-TrFE Coating on Silicon

Bilayer coatings of barium strontium titanate (Ba_xSr_(1-x)TiO₃)/poly [(vinylidenefluoride-co-trifluoroethylene] (PVDF-TrFE) were integrated on silicon Si (100) for pyroelectric devices. Pyroelectric properties of the composite were determined for different electrode materials (silver and aluminum) and different electrodes configurations creating an electric field in parallel and in-plane direction in the ferroelectric coating. For this purpose, parallel-plate and planar interdigital capacitors were fabricated. Anisotropy in the pyroelectric response was noted for the different directions of the measured electrical potential. The dynamic method was used to evaluate the pyroelectric properties in the temperature range of 22 to 48 °C. Pyroelectric response with a higher value was observed at the one plate's configuration of interdigital electrodes. The voltage response was the strongest when silver contacts were used. At temperatures near room temperature, the voltage increased by 182 µV at resolution of 7 µV/°C for the in-plain device configuration, vs. 290 µV at a resolution of 11 µV/°C for the out-of-plain configuration. A relationship between the surface morphology of the ferroelectric oxide and oxide/polymer coating and the pyroelectric voltage was also found, proving the smoothening effect of the introduction of polymer PVDF-TrFE over the BaSrTiO₃ grains.

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review

Electrical energy storage systems (EESSs) with high energy density and power density are essential for the effective miniaturization of future electronic devices. Among different EESSs available in the market, dielectric capacitors relying on swift electronic and ionic polarization-based mechanisms to store and deliver energy already demonstrate high power densities. However, different intrinsic and extrinsic contributions to energy dissipations prevent ceramic-based dielectric capacitors from reaching high recoverable energy density levels. Interestingly, relaxor ferroelectric-based dielectric capacitors, because of their low remnant polarization, show relatively high energy density and thus display great potential for applications requiring high energy density properties. In this study, some of the main strategies to improve the energy density properties of perovskite lead-free relaxor systems are reviewed, including (i) chemical modification at different crystallographic sites, (ii) chemical additives that do not target lattice sites, and (iii) novel processing approaches dedicated to bulk ceramics, thick and thin films, respectively. Recent advancements are summarized concerning the search for relaxor materials with superior energy density properties and the appropriate choice of both composition and processing routes to match various applications' needs. Finally, future trends in computationally-aided materials design are presented.

Nanostructured manganese oxides electrode with ultra-long lifetime for electrochemical capacitors

We describe the instantaneous fabrication of a highly porous three-dimensional (3D) nanostructured manganese oxides-reduced graphitic oxide (MnO_x-rGO) electrode by using a pulse-photonic processing technique. Such nanostructures facilitate the movement of ions/electrons and offer an extremely high surface area for the electrode/electrolyte interaction. The electrochemical performance was investigated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS) with 1 M KOH as the electrolyte. The as-prepared thin film electrode exhibits excellent electrochemical performance and an ultra-long lifetime by retaining 90% of the initial capacitance even after 100 000 GCD cycles at constant areal current density of 0.4 mA cm⁻². We attribute this excellent lifetime performance to the conductive reduced graphitic oxide, synergistic effects of carbon composite and the metal oxides, and the unique porous nanostructure. Such highly porous morphology also enhances the structural stability of the electrode by buffering the volume changes during the redox processes.

We describe the instantaneous fabrication of a highly porous three-dimensional (3D) nanostructured manganese oxides-reduced graphitic oxide (MnO_x-rGO) electrode by using a pulse-photonic processing technique.

Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics

Topological defects in condensed matter are attracting e significant attention due to their important role in phase transition and their fascinating characteristics. Among the various types of matter, ferroics which possess a switchable physical characteristic and form domain structure are ideal systems to form topological defects. In particular, a special class of topological defects-vortices-have been found to commonly exist in ferroics. They often manifest themselves as singular regions where domains merge in large systems, or stabilize as novel order states instead of forming domain structures in small enough systems. Understanding the characteristics and controllability of vortices in ferroics can provide us with deeper insight into the phase transition of condensed matter and also exciting opportunities in designing novel functional devices such as nano-memories, sensors, and transducers based on topological defects. In this review, we summarize the recent experimental and theoretical progress in ferroic vortices, with emphasis on those spin/dipole vortices formed in nanoscale ferromagnetics and ferroelectrics, and those structural domain vortices formed in multiferroic hexagonal manganites. We begin with an overview of this field. The fundamental concepts of ferroic vortices, followed by the theoretical simulation and experimental methods to explore ferroic vortices, are then introduced. The various characteristics of vortices (e.g. formation mechanisms, static/dynamic features, and electronic properties) and their controllability (e.g. by size, geometry, external thermal, electrical, magnetic, or mechanical fields) in ferromagnetics, ferroelectrics, and multiferroics are discussed in detail in individual sections. Finally, we conclude this review with an outlook on this rapidly developing field.

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

An enhanced resistive switching (RS) effect is observed in Pt/BaTiO₃(BTO)/ITO ferroelectric structures when a thin HfO₂:Al₂O₃ (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (T_c = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >10³ after 10⁹ switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.