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Intelligent Packaging for Real-Time Monitoring of Food-Quality: Current and Future Developments. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11083532] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
Food packaging encompasses the topical role of preserving food, hence, extending the shelf-life, while ensuring the highest quality and safety along the production chain as well as during storage. Intelligent food packaging further develops the functions of traditional packages by introducing the capability of continuously monitoring food quality during the whole chain to assess and reduce the insurgence of food-borne disease and food waste. To this purpose, several sensing systems based on different food quality indicators have been proposed in recent years, but commercial applications remain a challenge. This review provides a critical summary of responsive systems employed in the real-time monitoring of food quality and preservation state. First, food quality indicators are briefly presented, and subsequently, their exploitation to fabricate intelligent packaging based on responsive materials is discussed. Finally, current challenges and future trends are reviewed to highlight the importance of concentrating efforts on developing new functional solutions.
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Ma J, Zhao Y, Liu W, Song P, Yang L, Wei J, Yang F, Wang X. Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching. NANOSCALE RESEARCH LETTERS 2021; 16:15. [PMID: 33475898 PMCID: PMC7818367 DOI: 10.1186/s11671-021-03479-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Accepted: 01/11/2021] [Indexed: 06/12/2023]
Abstract
GaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.
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Affiliation(s)
- Jing Ma
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- Jihua Laboratory, Foshan, 528200 China
| | - Yongqiang Zhao
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Wen Liu
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
| | - Peishuai Song
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Liangliang Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408 China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408 China
- Beijing Academy of Quantum Information Science, Beijing, 100193 China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing, 100083 China
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Editorial for the Special Issue on Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. MICROMACHINES 2020; 11:mi11110988. [PMID: 33142913 PMCID: PMC7693984 DOI: 10.3390/mi11110988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Received: 10/31/2020] [Accepted: 10/31/2020] [Indexed: 11/17/2022]
Abstract
Discovered by Li and Bohn in 2000 [1], Metal Assisted Chemical Etching has been finally recognized as an emerging etching technology.[...].
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