Graphene-Based Contacts for Optoelectronic Devices

The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.

Impact of Graphene Monolayer on the Performance of Non-Conventional Silicon Heterojunction Solar Cells with MoOx Hole-Selective Contact

In this work, a new design of transparent conductive electrode based on a graphene monolayer is evaluated. This hybrid electrode is incorporated into non-standard, high-efficiency crystalline silicon solar cells, where the conventional emitter is replaced by a MoO_x selective contact. The device characterization reveals a clear electrical improvement when the graphene monolayer is placed as part of the electrode. The current-voltage characteristic of the solar cell with graphene shows an improved FF and V_oc provided by the front electrode modification. Improved conductance values up to 5.5 mS are achieved for the graphene-based electrode, in comparison with 3 mS for bare ITO. In addition, the device efficiency improves by around 1.6% when graphene is incorporated on top. These results so far open the possibility of noticeably improving the contact technology of non-conventional photovoltaic technologies and further enhancing their performance.

Graphene-Based Electrodes for Silicon Heterojunction Solar Cell Technology

Transparent conductive electrodes based on graphene have been previously proposed as an attractive candidate for optoelectronic devices. While graphene alone lacks the antireflectance properties needed in many applications, it can still be coupled with traditional transparent conductive oxides, further enhancing their electrical performance. In this work, the effect of combining indium tin oxide with between one and three graphene monolayers as the top electrode in silicon heterojunction solar cells is analyzed. Prior to the metal grid deposition, the electrical conductance of the hybrid electrodes was evaluated through reflection-mode terahertz time-domain spectroscopy. The obtained conductance maps showed a clear electrical improvement with each additional graphene sheet. In the electrical characterization of the finished solar cells, this translated to a meaningful reduction in the series resistance and an increase in the devices’ fill factor. On the other hand, each additional sheet absorbs part of the incoming radiation, causing the short circuit current to simultaneously decrease. Consequently, additional graphene monolayers past the first one did not further enhance the efficiency of the reference cells. Ultimately, the increase obtained in the fill factor endorses graphene-based hybrid electrodes as a potential concept for improving solar cells’ efficiency in future novel designs.