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Felton J, Blundo E, Kudrynskyi Z, Ling S, Bradford J, Pettinari G, Cooper T, Wadge M, Kovalyuk Z, Polimeni A, Beton P, Grant D, Walker G, Patanè A. Hydrogen-Induced Conversion of SnS 2 into SnS or Sn: A Route to Create SnS 2 /SnS Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202661. [PMID: 35863913 DOI: 10.1002/smll.202202661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/22/2022] [Indexed: 06/15/2023]
Abstract
The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS2 , where molecular hydrogen (H2 ) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to β-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS2 /SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.
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Affiliation(s)
- James Felton
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Elena Blundo
- Dipartimento di Fisica, Sapienza Universitä di Roma, Roma, 00185, Italy
| | - Zakhar Kudrynskyi
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Sanliang Ling
- Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Jonathan Bradford
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies (CNR-IFN), National Research Council, Rome, 00156, Italy
| | - Timothy Cooper
- Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Matthew Wadge
- Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Zakhar Kovalyuk
- Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, 58001, Ukraine
| | - Antonio Polimeni
- Dipartimento di Fisica, Sapienza Universitä di Roma, Roma, 00185, Italy
| | - Peter Beton
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - David Grant
- Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Gavin Walker
- Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Amalia Patanè
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
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Betti MG, Blundo E, De Luca M, Felici M, Frisenda R, Ito Y, Jeong S, Marchiani D, Mariani C, Polimeni A, Sbroscia M, Trequattrini F, Trotta R. Homogeneous Spatial Distribution of Deuterium Chemisorbed on Free-Standing Graphene. NANOMATERIALS 2022; 12:nano12152613. [PMID: 35957041 PMCID: PMC9370689 DOI: 10.3390/nano12152613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2022] [Revised: 07/22/2022] [Accepted: 07/27/2022] [Indexed: 02/05/2023]
Abstract
Atomic deuterium (D) adsorption on free-standing nanoporous graphene obtained by ultra-high vacuum D2 molecular cracking reveals a homogeneous distribution all over the nanoporous graphene sample, as deduced by ultra-high vacuum Raman spectroscopy combined with core-level photoemission spectroscopy. Raman microscopy unveils the presence of bonding distortion, from the signal associated to the planar sp2 configuration of graphene toward the sp3 tetrahedral structure of graphane. The establishment of D–C sp3 hybrid bonds is also clearly determined by high-resolution X-ray photoelectron spectroscopy and spatially correlated to the Auger spectroscopy signal. This work shows that the low-energy molecular cracking of D2 in an ultra-high vacuum is an efficient strategy for obtaining high-quality semiconducting graphane with homogeneous uptake of deuterium atoms, as confirmed by this combined optical and electronic spectro-microscopy study wholly carried out in ultra-high vacuum conditions.
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Affiliation(s)
- Maria Grazia Betti
- INFN Sezione di Roma 1, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
- Correspondence: (M.G.B.); (R.F.); (C.M.); Tel.: +39-06-49914389 (M.G.B.); +39-06-49914281 (R.F.); +39-06-49914393 (C.M.)
| | - Elena Blundo
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Marta De Luca
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Marco Felici
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Riccardo Frisenda
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
- Correspondence: (M.G.B.); (R.F.); (C.M.); Tel.: +39-06-49914389 (M.G.B.); +39-06-49914281 (R.F.); +39-06-49914393 (C.M.)
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan; (Y.I.); (S.J.)
| | - Samuel Jeong
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan; (Y.I.); (S.J.)
| | - Dario Marchiani
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Carlo Mariani
- INFN Sezione di Roma 1, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
- Correspondence: (M.G.B.); (R.F.); (C.M.); Tel.: +39-06-49914389 (M.G.B.); +39-06-49914281 (R.F.); +39-06-49914393 (C.M.)
| | - Antonio Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Marco Sbroscia
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Francesco Trequattrini
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
| | - Rinaldo Trotta
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy; (E.B.); (M.D.L.); (M.F.); (D.M.); (A.P.); (M.S.); (F.T.); (R.T.)
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Pan Y, Zhao Q, Gao F, Dai M, Gao W, Zheng T, Su S, Li J, Chen H. Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21383-21391. [PMID: 35482007 DOI: 10.1021/acsami.2c04204] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, identifying promising new two-dimensional (2D) materials with low-symmetry structures has aroused great interest for developing monolithic polarization-sensitive photodetectors with small volume. Here, after comprehensive research of the in-plane anisotropic structure and electronic and optoelectronic properties of layered γ-InSe, a superior responsivity polarization-sensitive photodetector based on multilayer γ-InSe is constructed by a facile method. Notably, the conductance and carrier mobility of the device along the armchair direction are 11.8 and 2.35 times larger than those along the zigzag direction, respectively. Benefitting from the high efficiency of light absorption and excellent carrier mobility (221 cm2 V-1 s-1) of our multilayered γ-InSe along the armchair direction, the device exhibits a superior responsivity of 127 A/W and an external quantum efficiency (EQE) of 104%. Especially, the highest responsivity along the armchair direction of our γ-InSe polarization-sensitive photodetectors can reach as high as 78.5 A/W under polarized light. This value is much higher than those of other devices even under unpolarized light. This work not only provides an insight into the in-plane anisotropic properties of 2D layered γ-InSe but also proposes a stable and environmentally friendly candidate for anisotropic optoelectronic applications.
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Affiliation(s)
- Yuan Pan
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Qixiao Zhao
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Feng Gao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wei Gao
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Tao Zheng
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Shichen Su
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
- SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd., Qingyuan 511517, P. R. China
| | - Jingbo Li
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Hongyu Chen
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
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Blundo E, Surrente A, Spirito D, Pettinari G, Yildirim T, Chavarin CA, Baldassarre L, Felici M, Polimeni A. Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles. NANO LETTERS 2022; 22:1525-1533. [PMID: 35107287 PMCID: PMC8880391 DOI: 10.1021/acs.nanolett.1c04197] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Revised: 01/25/2022] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (hBN) is widely used as a protective layer for few-atom-thick crystals and heterostructures (HSs), and it hosts quantum emitters working up to room temperature. In both instances, strain is expected to play an important role, either as an unavoidable presence in the HS fabrication or as a tool to tune the quantum emitter electronic properties. Addressing the role of strain and exploiting its tuning potentiality require the development of efficient methods to control it and of reliable tools to quantify it. Here we present a technique based on hydrogen irradiation to induce the formation of wrinkles and bubbles in hBN, resulting in remarkably high strains of ∼2%. By combining infrared (IR) near-field scanning optical microscopy and micro-Raman measurements with numerical calculations, we characterize the response to strain for both IR-active and Raman-active modes, revealing the potential of the vibrational properties of hBN as highly sensitive strain probes.
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Affiliation(s)
- Elena Blundo
- Physics
Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Alessandro Surrente
- Physics
Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wroclaw 50-370, Poland
| | - Davide Spirito
- IHP-Leibniz
Institut fur Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Giorgio Pettinari
- Institute
for Photonics and Nanotechnologies (CNR-IFN), National Research Council, 00156 Rome, Italy
| | - Tanju Yildirim
- Center
for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
| | - Carlos Alvarado Chavarin
- IHP-Leibniz
Institut fur Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Leonetta Baldassarre
- Physics
Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
- IHP-Leibniz
Institut fur Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Marco Felici
- Physics
Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Antonio Polimeni
- Physics
Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
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5
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Abdelnabi MMS, Blundo E, Betti MG, Cavoto G, Placidi E, Polimeni A, Ruocco A, Hu K, Ito Y, Mariani C. Towards free-standing graphane: atomic hydrogen and deuterium bonding to nano-porous graphene. NANOTECHNOLOGY 2021; 32:035707. [PMID: 33017812 DOI: 10.1088/1361-6528/abbe56] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Graphane is formed by bonding hydrogen (and deuterium) atoms to carbon atoms in the graphene mesh, with modification from the pure planar sp2 bonding towards an sp3 configuration. Atomic hydrogen (H) and deuterium (D) bonding with C atoms in fully free-standing nano porous graphene (NPG) is achieved, by exploiting low-energy proton (or deuteron) non-destructive irradiation, with unprecedented minimal introduction of defects, as determined by Raman spectroscopy and by the C 1s core level lineshape analysis. Evidence of the H- (or D-) NPG bond formation is obtained by bringing to light the emergence of a H- (or D-) related sp3-distorted component in the C 1s core level, clear fingerprint of H-C (or D-C) covalent bonding. The H (or D) bonding with the C atoms of free-standing graphene reaches more than 1/4 (or 1/3) at% coverage. This non-destructive H-NPG (or D-NPG) chemisorption is very stable at high temperatures up to about 800 K, as monitored by Raman and x-ray photoelectron spectroscopy, with complete healing and restoring of clean graphene above 920 K. The excellent chemical and temperature stability of H- (and D-) NPG opens the way not only towards the formation of semiconducting graphane on large-scale samples, but also to stable graphene functionalisation enabling futuristic applications in advanced detectors for the β-spectrum analysis.
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Affiliation(s)
| | - Elena Blundo
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
| | - Maria Grazia Betti
- Dipartimento di Fisica and INFN Sezione di Roma 1, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
| | - Gianluca Cavoto
- Dipartimento di Fisica and INFN Sezione di Roma 1, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
| | - Ernesto Placidi
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
| | - Antonio Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
| | - Alessandro Ruocco
- Dipartimento di Scienze and INFN Sezione di Roma 3, Università di Roma Tre, Via della Vasca Navale, 00146 Rome, Italy
| | - Kailong Hu
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Carlo Mariani
- Dipartimento di Fisica and INFN Sezione di Roma 1, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
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Deuterium Adsorption on Free-Standing Graphene. NANOMATERIALS 2021; 11:nano11010130. [PMID: 33429994 PMCID: PMC7827750 DOI: 10.3390/nano11010130] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 12/31/2020] [Accepted: 01/04/2021] [Indexed: 11/21/2022]
Abstract
A suitable way to modify the electronic properties of graphene—while maintaining the exceptional properties associated with its two-dimensional (2D) nature—is its functionalisation. In particular, the incorporation of hydrogen isotopes in graphene is expected to modify its electronic properties leading to an energy gap opening, thereby rendering graphene promising for a widespread of applications. Hence, deuterium (D) adsorption on free-standing graphene was obtained by high-energy electron ionisation of D2 and ion irradiation of a nanoporous graphene (NPG) sample. This method allows one to reach nearly 50 at.% D upload in graphene, higher than that obtained by other deposition methods so far, towards low-defect and free-standing D-graphane. That evidence was deduced by X-ray photoelectron spectroscopy of the C 1s core level, showing clear evidence of the D-C sp3 bond, and Raman spectroscopy, pointing to remarkably clean and low-defect production of graphane. Moreover, ultraviolet photoelectron spectroscopy showed the opening of an energy gap in the valence band. Therefore, high-energy electron ionisation and ion irradiation is an outstanding method for obtaining low defect D-NPG with a high D upload, which is very promising for the fabrication of semiconducting graphane on large scale.
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