Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

Design of Promising Uranyl(VI) Complexes Thin Films with Potential Applications in Molecular Electronics

In this work, it is proposed the development of organic semiconductors (OS) based on uranyl(VI) complexes. The above by means of the synthesis and the characterization of the complexes by Infrared spectroscopy, Nuclear magnetic resonance spectroscopy, mass spectrometry, and X-ray diffraction. Films of these complexes were deposited and subsequently, topographic and structural characterization was carried out by Scanning Electron Microscopy, X-ray diffraction, and Atomic Force Microscopy. Additionally, the nanomechanical evaluation was performed to know the stiffness of uranyl films using their modulus of elasticity. Also, the optical characterization took place in the devices and their bandgap value ranges between 2.40 and 2.93 eV being the minor for the film of the uranyl complex with the N on pyridine in position 4 (2 c). Finally, the electrical behavior of the uranyl(VI) films was evaluated, and important differences were obtained: the uranyl complex with the N on pyridine in position 2 (2 a) film is not influenced by changes in lighting and its current density is in the order of 10-3 A/cm2. The film with uranyl complex with the N on pyridine in position 3 (2 b) and 2 c presents a greater current flow under lighting conditions and two orders of magnitude larger than in film 2 a. In these films 2 b and 2 c, ohmic behavior occurs at low voltages, while at high voltages the charge transport changes to space-charge limited current behavior.

Synthesis of New Ruthenium Complexes and Their Exploratory Study as Polymer Hybrid Composites in Organic Electronics

Polymeric hybrid films, for their application in organic electronics, were produced from new ruthenium indanones in poly(methyl methacrylate) (PMMA) by the drop-casting procedure. Initially, the synthesis and structural characterization of the ruthenium complexes were performed, and subsequently, their properties as a potential semiconductor material were explored. Hence hybrid films in ruthenium complexes were deposited using PMMA as a polymeric matrix. The hybrid films were characterized by infrared spectrophotometry and atomic force microscopy. The obtained results confirmed that the presence of the ruthenium complexes enhanced the mechanical properties in addition to increasing the transmittance, favoring the determination of their optical parameters. Both hybrid films exhibited a maximum stress around 10.5 MPa and a Knoop hardness between 2.1 and 18.4. Regarding the optical parameters, the maximum transparency was obtained at wavelengths greater than 590 nm, the optical band gap was in the range of 1.73-2.24 eV, while the Tauc band gap was in the range of 1.68-2.17 eV, and the Urbach energy was between 0.29 and 0.50 eV. Consequently, the above comments are indicative of an adequate semiconductor behavior; hence, the target polymeric hybrid films must be welcomed as convenient candidates as active layers or transparent electrodes in organic electronics.

Novel yellowish-green single-phased spinel Mg1-xBaxAl2O4:Mn2+ phosphor(s) for color rendering white-light-emitting diodes

For white light-rendering research activities, interpretation by using colored emitting materials is an alternative approach. But there are issues in designing the white color emitting materials. Particularly, differences in thermal and decay properties of discrete red, green, and blue emitting materials led to the quest for the search of a single-phased material, able to emit primary colors for white light generation. The current study is an effort to design a simple, single-phase, and cost-effective material with the tunable emission of primary colors by a series of Mg1-xBaxAl2O4:Mn2+ nanopowders. Doping of manganese ion (Mn2+) in the presence of the larger barium cation (Ba2+) at tetrahedral-sites of the spinel magnesium aluminate (MgAl2O4) structure led to the creation of antisite defects. Doped samples were found to have lower bandgaps compared with MgAl2O4, and hybridization of 3d-orbitals of Mn2+ with O(2p), Mg(2s)/Al(2s3p) was found to be responsible for narrowing the bandgap. The distribution of cations at various sites at random results in a variety of electronic transitions between the valance band and oxygen vacancies as well as electron traps produced the antisite defects. The suggested compositions might be used in white light applications since they have three emission bands with centers at 516 nm (green), 464 nm (blue) and 622 nm (red) at an excitation wavelength of 380 nm. A detailed discussion to analyze the effects of the larger cationic radius of Ba2+ on the lattice strain, unit cell parameters, and cell volumes using X-ray diffraction analysis is presented.

Structural determination, characterization and computational studies of doped semiconductors base silicon phthalocyanine dihydroxide and dienynoic acids

The chemical doping of silicon phthalocyanine dihydroxide (SiPc(OH)2), with (2E, 4Z)-5, 7-diphenylhepta-2, 4-dien-6-ynoic acids (DAc) with electron-withdrawing (BrDAc) and electron-donating (MeODAc) substituents is the main purpose of this work. Theoretical calculations were carried out on Gaussian16 software, with geometrical optimization of all involved species, and obtention of the highest occupied molecule orbital (HOMO), lowest unoccupied molecular orbital (LUMO), and the respective energy gaps. The theoretical calculations show two hydrogen bridge formations: the first one as a peripheral interaction between the terminal oxygen atoms from the acid unit and hydrogen atoms from the phthalocyanine aromatic rings. The second one as the interaction at the nitrogen atoms of the phthalocyanine, which are compelled to form a new flat plane far from the original flat phthalocyanine deck. These organic semiconductors were deposited as thin films and characterized by IR spectroscopy, atomic force microscopy (AFM), and the optical parameters were gathered from UV-Vis studies. The indirect and direct optical band gap, the onset gap and the Urbach energy were obtained. In order to compare the effect of the acids as dopants of the silicon phthalocyanine, the SiPc(OH)2-DAc films were electrically characterized. The SiPc(OH)2-DAc films exhibit an ambipolar electrical behavior, which is influenced by the incidence of different lighting conditions at voltages above 0.3V. The glass/ITO/SiPc(OH)2-MeODAc/Ag reaches a maximum current of 5.68 × 10-5 A for natural light condition, while the glass/ITO/SiPc(OH)2-BrDAc/Ag, reaches a maximum current of 9.21 × 10-9 A for white illumination condition.

Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni1-xZnxS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.

Influence of the Polymeric Matrix on the Optical and Electrical Properties of Copper Porphine-Based Semiconductor Hybrid Films

In this study, we assessed the electrical and optical behavior of semiconductor hybrid films fabricated from octaethyl-21H,23H-porphine copper (CuP), embedded in polymethylmethacrylate (PMMA), and polystyrene (PS). The hybrid films were characterized structurally and morphologically using infrared spectroscopy (IR), atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Subsequently, the PMMA:CuP and PS:CuP hybrid films were evaluated optically by UV-vis spectroscopy, as well as electrically, with the four-point collinear method. Hybrid films present a homogeneous and low roughness morphology. In addition, the PS matrix allows the crystallization of the porphin, while PMMA promotes the amorphous structure in CuP. The polymeric matrix also affects the optical behavior of the films, since the smallest optical gap (2.16 eV) and onset gap (1.89 eV), and the highest transparency are obtained in the film with a PMMA matrix. Finally, the electrical behavior in hybrid films is also affected by the matrix: the largest amount of current carried is approximately 0.01 A for the PS:CuP film, and 0.0015 A for the PMMA:CuP film. Thanks to the above properties, hybrid films are promising candidates for use in optoelectronic devices.

Fabrication and Characterization of Hybrid Films Based on NiFe2O4 Nanoparticles in a Polymeric Matrix for Applications in Organic Electronics

Hybrid films for applications in organic electronics from NiFe₂O₄ nanoparticles (NPs) in poly(3,4 ethylene dioxythiophene), poly(4-styrenesulfonate) (PEDOT:PSS), and poly(methyl methacrylate) (PMMA) were fabricated by the spin-coating technique. The films were characterized by infrared spectroscopy, atomic force microscopy, scanning electron microscopy, and energy-dispersive spectroscopy to subsequently determine their optical parameters. The electronic transport of the hybrid films was determined in bulk heterojunction devices. The presence of NiFe₂O₄ NPs reinforces mechanical properties and increases transmittance in the hybrid films; the PEDOT:PSS-NiFe₂O₄ NPs film is the one that has a maximum stress of 28 MPa and a Knoop hardness of 0.103, while the PMMA-NiFe₂O₄ NPs film has the highest transmittance of (87%). The Tauc band gap is in the range of 3.78-3.9 eV, and the Urbach energy is in the range of 0.24-0.33 eV. Regarding electrical behavior, the main effect is exerted by the matrix, although the current carried is of the same order of magnitude for the two devices: glass/ITO/polymer-NiFe₂O₄ NPs/Ag. NiFe₂O₄ NPs enhance the mechanical, optical, and electrical behavior of the hybrid films and can be used as semi-transparent anodes and as active layers.

Pentacoordinated Organotin(IV) Complexes as an Alternative in the Design of Highly Efficient Optoelectronic and Photovoltaic Devices: Synthesis and Photophysical Characterization

The synthesis of four pentacoordinated organotin(IV) complexes prepared in a one-pot reaction from 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine and organotin oxides is reported. The complexes were characterized by UV-Vis, IR, MS, 1H, 13C and 119Sn NMR techniques. The compound based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene revealed the formation of a monomeric complex with a distorted five-coordinated molecular geometry intermediate between the trigonal bipyramidal and square pyramidal. In order to find possible applications in photovoltaic devices, hybrid films of organotin(IV) complexes embedded in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with graphene were deposited. The topographic and mechanical properties were examined. The film with the complex integrated into the cyclohexyl substituent has high plastic deformation, with a maximum stress of 1.69 × 107 Pa and a Knoop hardness of 0.061. The lowest values of 1.85 eV for the onset gap and 3.53 eV for the energy gap were obtained for the heterostructure having the complex with the phenyl substituent. Bulk heterojunction devices were fabricated; these devices showed ohmic behavior at low voltages and a space-charge-limited current (SCLC) conduction mechanism at higher voltages. A value of 0.02 A was found for the maximum carried current. The SCLC mechanism suggests hole mobility values of between 2.62 × 10−2 and 3.63 cm2/V.s and concentrations of thermally excited holes between 2.96 × 1018 and 4.38 × 1018 m−3.