Pyrene Coating Transition Metal Disulfides as Protection from Photooxidation and Environmental Aging

Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties

In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.

Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching

Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O₂ etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS₂. We also successfully applied this process for synthesizing WS₂, MoSe₂, and WSe₂ nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS₂, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.

Field-effect transistor antigen/antibody-TMDs sensors for the detection of COVID-19 samples

We fabricated sensors by modifying the surface of MoS₂ and WS₂ with COVID-19 antibodies and investigated their characteristics, including stability, reusability, sensitivity, and selectivity. Thiols and disulfanes in antibodies strongly interact with vacant Mo or W sites of MoS₂ or WS₂, yielding durable devices that are stable for several days in the air or water. More importantly, detachment of the antibodies is suppressed even during the aggressive cleaning process of the devices at pH 3, which allows reusing the same device in several experiments without appreciable loss of sensitivity. Therefore, the nanodevice may be employed in samples of different patients. Further, we found a limit of detection (LOD) of 1 fg ml^-1 at room temperature, time responses of 1 second, and selectivity against interferences such as KLH protein or Albumin.

Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi₂N₄ monolayer is predicted. The calculation results show that the two-dimensional MnSi₂N₄ prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi₂N₄ has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi₂N₄ monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi₂N₄ monolayer has potential application in the field of high-density information storage and spintronic devices.

Oxidation and Degradation of WS2 Monolayers Grown by NaCl-Assisted Chemical Vapor Deposition: Mechanism and Prevention

The preservation of two-dimensional WS₂ in the environment is a concern for researchers. In addition to water vapor and oxygen, the latest research points out that degradation is directly related to light absorption. Based on the selection rules of nonlinear optics, two-photon absorption is dipole forbidden in the exciton 1s states, but second-harmonic generation (SHG) is allowed with virtual transitions. According to this mechanism, we proved that SHG is an optical detection method with non-photooxidative damage and energy characteristics. With this detection method, we can explore the oxidation and degradation mechanisms of WS₂ grown by NaCl-assisted chemical vapor deposition in its original state. The WS₂ monolayers that use NaCl to assist in growth have undergone different degradation processes, starting to oxidize from random positions in the triangular flake. We use a photocatalytic reaction to explain the photo-induced degradation mechanism with sulfur vacancies. It was further found that WS₂ grown with NaCl assistance is hydrolyzed in a dark and high-humidity environment, which does not occur in pure WS₂. Finally, we demonstrated that changing the direction of the sapphire substrate relative to the gas flow direction to grow NaCl-assisted WS₂ can greatly improve its stability in the ambient atmosphere, even when exposed to light. The optimal geometric structures and ground state energies are investigated by the density functional theory-based calculations. According to the orientation and symmetry of NaCl-assisted WS₂, we can expect that it will have a better growth quality when the gas flow direction is perpendicular to the [112̄0] direction of the sapphire substrate. This contributes to the nucleation and subsequent growth of NaCl-assisted WS₂. This research provides a more stable optical inspection method than other established methods and greatly improves the operational stability of NaCl-assisted WS₂ under environmental conditions.

Pyrene-Terminated Tin Sulfide Clusters: Optical Properties and Deposition on a Metal Surface

Herein, we present the synthesis of two pyrene-functionalized clusters, [(Rpyr Sn)4 S6 ]⋅2 CH2 Cl2 (4) and [(Rpyr Sn)4 Sn2 S10 ]⋅n CH2 Cl2 (n=4, 5 a; n=2, 5 b; Rpyr =CMe2 CH2 C(Me)N-NC(H)C16 H9 ), both of which form in reactions of the organotin sulfide cluster [(RN Sn)4 S6 ] (C; RN =CMe2 CH2 C(Me)N-NH2 ) with the well-known fluorescent dye 1-pyrenecarboxaldehyde (B). In contrast, reactions using an organotin sulfide cluster with another core structure, [(RN Sn)3 S4 Cl] (A), leads to formation of small molecular fragments, [(Rpyr Cl2 Sn)2 S] (1), (pyren-1-ylmethylene)hydrazine (2), and 1,2-bis(pyren-1-ylmethylene)hydrazine (3). Besides synthesis and structures of the new compounds, we report the influence of the inorganic core on the optical properties of the dye, which was analyzed exemplarily for compound 5 a via absorption and fluorescence spectroscopy. This cluster was also used for exploring the potential of such non-volatile clusters for deposition on a metal surface under vacuum conditions.

Stabilization of metallic phases through formation of metallic/semiconducting lateral heterostructures

In this study, we develop a new approach for stabilization of metallic phases of monolayer MoS₂ through the formation of lateral heterostructures composed of semiconducting/metallic MoS₂. The structure of metallic (a mixture of T and T') and semiconducting (2H) phases was unambiguously characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, photoluminescence imaging, and transmission electron microscope observations. The amount of NaCl, reaction temperature, reaction time, and locations of substrates are essential for controlling the percentage of metallic/semiconducting phases in lateral heterostructures; loading a large amount of NaCl at low temperatures with short reaction times prefers metallic phases. The existence of the semiconducting phase in MoS₂ lateral heterostructures significantly enhances the stability of the metallic phases through passivation of reactive edges. The same approach can be applied to other transition metal dichalcogenides (TMDs), such as WS₂, leading to boosting of basic research and application of TMDs in metallic phases.

Stability, Structure and Reconstruction of 1H-Edges in MoS2

Density functional studies of the edges of single-layer 1H-MoS₂ are presented. This phase presents a rich variability of edges that can influence the morphology and properties of MoS₂ nano-objects, play an important role in industrial chemical processes, and find future applications in energy storage, electronics and spintronics. The so-called Mo-100 %S edges vertical S-dimers were confirmed to be stable, however the authors also identified a family of metastable edges combining Mo atoms linked by two-electron donor symmetrical disulfide ligands and four-electron donor unsymmetrical disulfide ligands. These may be entropically favored, potentially stabilizing them at high temperatures as a "liquid edge" phase. For Mo-50 %S edges, S-bridge structures with 3× periodicity along the edge are the most stable, compatible with a Peierls' distortion arising from the d-bands of the edge Mo atoms. An additional explanation for this periodicity is proposed through the formation of 3-center bonds.