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Kohrell F, Nebgen BR, Spies JA, Hollinger R, Zong A, Uzundal C, Spielmann C, Zuerch M. A solid-state high harmonic generation spectrometer with cryogenic cooling. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:023906. [PMID: 38416040 DOI: 10.1063/5.0174407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 01/08/2024] [Indexed: 02/29/2024]
Abstract
Solid-state high harmonic generation (sHHG) spectroscopy is a promising technique for studying electronic structure, symmetry, and dynamics in condensed matter systems. Here, we report on the implementation of an advanced sHHG spectrometer based on a vacuum chamber and closed-cycle helium cryostat. Using an in situ temperature probe, it is demonstrated that the sample interaction region retains cryogenic temperature during the application of high-intensity femtosecond laser pulses that generate high harmonics. The presented implementation opens the door for temperature-dependent sHHG measurements down to a few Kelvin, which makes sHHG spectroscopy a new tool for studying phases of matter that emerge at low temperatures, which is particularly interesting for highly correlated materials.
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Affiliation(s)
- Finn Kohrell
- Institute for Optics and Quantum Electronics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Department of Chemistry, University of California, Berkeley, California 94720, USA
| | - Bailey R Nebgen
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Jacob A Spies
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Richard Hollinger
- Institute for Optics and Quantum Electronics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Department of Chemistry, University of California, Berkeley, California 94720, USA
| | - Alfred Zong
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Can Uzundal
- Department of Chemistry, University of California, Berkeley, California 94720, USA
| | - Christian Spielmann
- Institute for Optics and Quantum Electronics, Friedrich Schiller University Jena, 07743 Jena, Germany
| | - Michael Zuerch
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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Li Q, Dong J, Han D, Xu D, Wang J, Wang Y. Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors. NANOMATERIALS 2022; 12:nano12071167. [PMID: 35407285 PMCID: PMC9000375 DOI: 10.3390/nano12071167] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Revised: 03/27/2022] [Accepted: 03/28/2022] [Indexed: 02/01/2023]
Abstract
Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that Vhump–VON was negatively correlated with the thickness of the bottom ZnO layer (10, 20, 30, and 40 nm), while it was positively correlated with the thickness of the top ITO layer (3, 5, 7, and 9 nm), where Vhump is the gate voltage corresponding to the occurrence of the hump and VON is the turn-on voltage. The results demonstrated that carrier transport forms dual current paths through both the ZnO and ITO layers, synthetically determining the hump characteristics of the ZnO/ITO TFTs. Notably, the hump was effectively eliminated by reducing the ITO thickness to no more than 5 nm. Furthermore, the hump characteristics of the ZnO/ITO TFTs under positive gate-bias stress (PBS) were examined. This work broadens the practical application of TCO and provides a promising method for solving the hump phenomenon of oxide TFTs.
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Affiliation(s)
- Qi Li
- Institute of Microelectronics, Peking University, Beijing 100871, China; (Q.L.); (D.X.); (J.W.); (Y.W.)
| | - Junchen Dong
- School of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, China
- Correspondence: (J.D.); (D.H.)
| | - Dedong Han
- Institute of Microelectronics, Peking University, Beijing 100871, China; (Q.L.); (D.X.); (J.W.); (Y.W.)
- Correspondence: (J.D.); (D.H.)
| | - Dengqin Xu
- Institute of Microelectronics, Peking University, Beijing 100871, China; (Q.L.); (D.X.); (J.W.); (Y.W.)
| | - Jingyi Wang
- Institute of Microelectronics, Peking University, Beijing 100871, China; (Q.L.); (D.X.); (J.W.); (Y.W.)
| | - Yi Wang
- Institute of Microelectronics, Peking University, Beijing 100871, China; (Q.L.); (D.X.); (J.W.); (Y.W.)
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