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Li H, Huang H, Lina A, Tang K, Chen Z, Zhang Z, Xu K, Ding K, Wang L, Huang J. Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method. Heliyon 2024; 10:e23349. [PMID: 38173527 PMCID: PMC10761351 DOI: 10.1016/j.heliyon.2023.e23349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 11/30/2023] [Accepted: 12/01/2023] [Indexed: 01/05/2024] Open
Abstract
Copper-doped Zinc Tellurium (ZnTe:Cu) films were deposited on borosilicate glass using magnetron co-sputtering technique. The influence of the substrate temperature on the structural, morphological, optical and electrical properties of ZnTe:Cu films was investigated by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-Vis spectrophotometer and Hall effect measurement system. The results indicate that substrate temperature significantly affects the properties of the ZnTe:Cu films. When the substrate temperature increases from room temperature to 600 °C, the (111)-preferred orientation of ZnTe:Cu films is gradually replaced by the (220)-preferred orientation. At high substrate temperatures (≥500 °C), the CuxTe phase appears in the ZnTe:Cu films, resulting in higher carrier concentration (>1019 cm-3) and lower resistivity (<10-2 Ω cm) of the prepared films.
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Affiliation(s)
- Hongwei Li
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Haofei Huang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Azhati Lina
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Ke Tang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
| | - Zhuorui Chen
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Zilong Zhang
- Research Center for Functional Materials, National Institute for Materials Sciences (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Ke Xu
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Keke Ding
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Linjun Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai, China
| | - Jian Huang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
- Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai, China
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Min C, Chen Y, Yang Y, Wu H, Guo B, Wu S, Huang Q, Qin D, Hou L. A Simple and Effective Phosphine-Doping Technique for Solution-Processed Nanocrystal Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111766. [PMID: 37299669 DOI: 10.3390/nano13111766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 05/15/2023] [Accepted: 05/27/2023] [Indexed: 06/12/2023]
Abstract
Solution-processed cadmium telluride (CdTe) nanocrystal (NC) solar cells offer the advantages of low cost, low consumption of materials and large-scale production via a roll-to-roll manufacture process. Undecorated CdTe NC solar cells, however, tend to show inferior performance due to the abundant crystal boundaries within the active CdTe NC layer. The introduction of hole transport layer (HTL) is effective for promoting the performance of CdTe NC solar cells. Although high-performance CdTe NC solar cells have been realized by adopting organic HTLs, the contact resistance between active layer and the electrode is still a large problem due to the parasitic resistance of HTLs. Here, we developed a simple phosphine-doping technique via a solution process under ambient conditions using triphenylphosphine (TPP) as a phosphine source. This doping technique effectively promoted the power conversion efficiency (PCE) of devices to 5.41% and enabled the device to have extraordinary stability, showing a superior performance compared with the control device. Characterizations suggested that the introduction of the phosphine dopant led to higher carrier concentration, hole mobility and a longer lifetime of the carriers. Our work presents a new and simple phosphine-doping strategy for further improving the performance of CdTe NC solar cells.
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Affiliation(s)
- Chenbo Min
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Yihui Chen
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Yonglin Yang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Hongzhao Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Bailin Guo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Sirui Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Qichuan Huang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
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Jiang Y, Pan Y, Wu W, Luo K, Rong Z, Xie S, Zuo W, Yu J, Zhang R, Qin D, Xu W, Wang D, Hou L. Hole Transfer Layer Engineering for CdTe Nanocrystal Photovoltaics with Improved Efficiency. NANOMATERIALS 2020; 10:nano10071348. [PMID: 32664220 PMCID: PMC7407640 DOI: 10.3390/nano10071348] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Revised: 06/28/2020] [Accepted: 07/04/2020] [Indexed: 11/17/2022]
Abstract
Interface engineering has led to significant progress in solution-processed CdTe nanocrystal (NC) solar cells in recent years. High performance solar cells can be fabricated by introducing a hole transfer layer (HTL) between CdTe and a back contact electrode to reduce carrier recombination by forming interfacial dipole effect at the interface. Here, we report the usage of a commercial product 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro) as a hole transfer layer to facilitate the hole collecting for CdTe nanocrystal solar cells. It is found that heat treatment on the hole transfer layer has significant influence on the NC solar cells performance. The Jsc, Voc, and power conversion efficiency (PCE) of NC solar cells are simultaneously increased due to the decreased contact resistance and enhanced built-in electric field. We demonstrate solar cells that achieve a high PCE of 8.34% for solution-processed CdTe NC solar cells with an inverted structure by further optimizing the HTL annealing temperature, which is among the highest value in CdTe NC solar cells with the inverted structure.
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Affiliation(s)
- Yasi Jiang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Yiyang Pan
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Wanhua Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Kaiying Luo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Zhitao Rong
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Sihang Xie
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Wencai Zuo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Jingya Yu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Ruibo Zhang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (L.H.); Tel.: +86-020-8711-4346 (D.Q.); +86-020-8522-4386 (L.H.)
| | - Wei Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Dan Wang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Lintao Hou
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou 510632, China
- Correspondence: (D.Q.); (L.H.); Tel.: +86-020-8711-4346 (D.Q.); +86-020-8522-4386 (L.H.)
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Mihailescu IN. Synthesis and Modification of Nanostructured Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:nano9101427. [PMID: 31600908 PMCID: PMC6835704 DOI: 10.3390/nano9101427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2019] [Accepted: 10/04/2019] [Indexed: 06/10/2023]
Abstract
The idea of nanomaterials, nanoscience, and nanotechnologies was formulated by Richard Feynman in 1959 in his famous lecture "There's Plenty of Room at the Bottom" [...].
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Affiliation(s)
- Ion N Mihailescu
- Lasers Department, Laser-Surface-Plasma Interactions Laboratory, National Institute for Lasers, Plasma, and Radiation Physics (INFLPR), Strada Atomistilor, nr. 409, P.O. Box MG-36, RO-077125 Magurele, Ilfov, Romania.
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