A time-domain CMOS oscillator-based thermostat with digital set-point programming

Categorization and Characterization of Time Domain CMOS Temperature Sensors

Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

A 0.026 mm2 Time Domain CMOS Temperature Sensor with Simple Current Source

This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm² because it adopts a simple current source consisting of an n-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 °C over the temperature range of 0 to 100 °C after two point calibration was carried out at 20 and 80 °C, respectively. The temperature resolution was set as 0.32 °C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 °C/mV at 27 °C while the supply voltage varies from 1.65 to 1.95 V.

Versatile Tunable Voltage-Mode Biquadratic Filter and Its Application in Quadrature Oscillator

This paper presents a versatile tunable voltage-mode biquadratic filter with five inputs and three outputs. The proposed filter enjoys five single-ended output operational transconductance amplifiers (OTAs) and two grounded capacitors. The filter can be easily transformed into a quadrature oscillator. The filter with grounded capacitors is resistorless and electronically tunable. Either a voltage-mode five-input single-output biquadratic filter or a voltage-mode single-input three-output biquadratic filter can be operated by appropriate selecting input and output terminals. In the operation of five-input single-output biquadratic filter, the non-inverting lowpass, non-inverting bandpass, inverting bandpass, inverting highpass, non-inverting bandreject, inverting bandreject, and non-inverting allpass filtering responses can be realized by appropriately applying the input voltage signals. In the operation of single-input three-output biquadratic filter, the non-inverting/inverting lowpass, bandpass and bandreject filtering responses can be realized simultaneously. The circuit provides independent adjustment of the resonance angular frequency and quality factor, high-input impedance, and no inverting-type input voltage signals are imposed. The application in quadrature oscillator exhibits independent electronic tuning characteristic of the oscillation condition and the oscillation frequency. The theoretical analysis has been verified through OrCAD PSpice and furthermore by experimental measurements.

SNDR Limits of Oscillator-Based Sensor Readout Circuits

This paper analyzes the influence of phase noise and distortion on the performance of oscillator-based sensor data acquisition systems. Circuit noise inherent to the oscillator circuit manifests as phase noise and limits the SNR. Moreover, oscillator nonlinearity generates distortion for large input signals. Phase noise analysis of oscillators is well known in the literature, but the relationship between phase noise and the SNR of an oscillator-based sensor is not straightforward. This paper proposes a model to estimate the influence of phase noise in the performance of an oscillator-based system by reflecting the phase noise to the oscillator input. The proposed model is based on periodic steady-state analysis tools to predict the SNR of the oscillator. The accuracy of this model has been validated by both simulation and experiment in a 130 nm CMOS prototype. We also propose a method to estimate the SNDR and the dynamic range of an oscillator-based readout circuit that improves by more than one order of magnitude the simulation time compared to standard time domain simulations. This speed up enables the optimization and verification of this kind of systems with iterative algorithms.

A linearity-enhanced time-domain CMOS thermostat with process-variation calibration

This study proposes a linearity-enhanced time-domain complementary metal-oxide semiconductor (CMOS) thermostat with process-variation calibration for improving the accuracy, expanding the operating temperature range, and reducing test costs. For sensing temperatures in the time domain, the large characteristic curve of a CMOS inverter markedly affects the accuracy, particularly when the operating temperature range is increased. To enhance the on-chip linearity, this study proposes a novel temperature-sensing cell comprising a simple buffer and a buffer with a thermal-compensation circuit to achieve a linearised delay. Thus, a linearity-enhanced oscillator consisting of these cells can generate an oscillation period with high linearity. To achieve one-point calibration support, an adjustable-gain time stretcher and calibration circuit were adopted for the process-variation calibration. The programmable temperature set point was determined using a reference clock and a second (identical) adjustable-gain time stretcher. A delay-time comparator with a built-in customised hysteresis circuit was used to perform a time comparison to obtain an appropriate response. Based on the proposed design, a thermostat with a small area of 0.067 mm² was fabricated using a TSMC 0.35-μm 2P4M CMOS process, and a robust resolution of 0.05 °C and dissipation of 25 μW were achieved at a sample rate of 10 samples/s. An inaccuracy of −0.35 °C to 1.35 °C was achieved after one-point calibration at temperatures ranging from −40 °C to 120 °C. Compared with existing thermostats, the proposed thermostat substantially improves the circuit area, accuracy, operating temperature range, and test costs.

A CMOS smart temperature and humidity sensor with combined readout

A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm² or 1.2 mm² were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 μA.