Vertically Coupled Plasmonic Racetrack Ring Resonator for Biosensor Applications

Advances in 0D quantum dots and hybrid nanoarchitectures for high-performance gas sensing devices

Zero-dimensional quantum dots (QDs) and their hybrid structures having been rapidly developed are reshaping the design and performance of next generation ultrafast electronic and optoelectronic devices. The high-performance metrics achievable in photodetectors, solar cells, transistors, and other application areas can be realized through the use of QDs with their tunable electronic and optical properties. Recent advances in the synthesis of QD hybrid structures, where QDs are incorporated within other nanostructure dimensions (1D nanowires, 2D materials), have dramatically increased charge carrier mobility, lowered recombination rates, and resulted in highly controlled interfacial properties. Synergistic effects between these hybrid configurations are exploited, including improved charge separation and enhanced exciton dissociation, which are very important for having ultrafast response times and greater sensitivity. Advanced fabrication techniques such as chemical vapor deposition and solution based self-assembly, QD hybrids can be fabricated with highly controlled interfaces and optimal energy band alignments. Further, computational simulations such as density functional theory (DFT) and time dependent DFT have provided further insights into the charge dynamics and electronic interactions in these hybrid systems for guidance on their design and application. The potential of QD-based hybrid architectures in addressing future information processing demands is demonstrated in this work, setting the stage for the development of high-speed, low-power devices in communications, sensing, and renewable energy technologies.

Racetrack Ring Resonator-Based on Hybrid Plasmonic Waveguide for Refractive Index Sensing

In this study, a comprehensive numerical analysis is conducted on a hybrid plasmonic waveguide (HPWG)-based racetrack ring resonator (RTRR) structure, tailored specifically for refractive index sensing applications. The sensor design optimization yields remarkable results, achieving a sensitivity of 275.7 nm/RIU. Subsequently, the boundaries of sensor performance are pushed even further by integrating a subwavelength grating (SWG) structure into the racetrack configuration, thereby augmenting the light-matter interaction. Of particular note is the pivotal role played by the length of the SWG segment in enhancing device sensitivity. It is observed that a significant sensitivity enhancement can be obtained, with values escalating from 377.1 nm/RIU to 477.7 nm/RIU as the SWG segment length increases from 5 µm to 10 µm, respectively. This investigation underscores the immense potential of HPWG in tandem with SWG for notably enhancing the sensitivity of photonic sensors. These findings not only advance the understanding of these structures but also pave the way for the development of highly efficient sensing devices with unprecedented performance capabilities.

ZrN-based plasmonic sensor: a promising alternative to traditional noble metal-based sensors for CMOS-compatible and tunable optical properties

In this article, we introduce a novel comb shaped plasmonic refractive index sensor that employs a ZrN-Insulator-ZrN configuration. The sensor is constructed using Zirconium Nitride (ZrN), an alternative refractory material that offers advantages over traditional metals such as silver and gold, as ZrN is standard Complementary Metal Oxide Semiconductor (CMOS)-compatible and has tunable optical properties. The sensor has recorded a maximum sensitivity, figure of merit (FOM), and sensing resolution of 1445.46 nm/RIU, 140.96, and 6.91 × 10-7RIU-1, respectively. Beyond that, the integration of ZrN offers the sensor with various advantages, including higher hardness, thermal stability at high temperatures, better corrosion and abrasion resistance, and lower electrical resistivity, whereas traditional plasmonic metals lack these properties, curtailing the real-world use of plasmonic devices. As a result, our suggested model surpasses the typical noble material based Metal-Insulator-Metal (MIM) arrangement and offers potential for the development of highly efficient, robust, and durable nanometric sensing devices which will create a bridge between nanoelectronics and plasmonics.

Low Power Contactless Bioimpedance Sensor for Monitoring Breathing Activity

An electronic circuit for contactless detection of impedance changes in a tissue is presented. It operates on the principle of resonant frequency change of the resonator having the observed tissue as a dielectric. The operating frequency reflects the tissue dielectric properties (i.e., the tissue composition and on the tissue physiological changes). The sensor operation was tested within a medical application by measuring the breathing of a patient, which was an easy detectable physiological process. The advantage over conventional contact bioimpedance measurement methods is that no direct contact between the resonator and the body is required. Furthermore, the sensor's wide operating range, ability to adapt to a broad range of measured materials, fast response, low power consumption, and small outline dimensions enables applications not only in the medical sector, but also in other domains. This can be extended, for example, to food industry or production maintenance, where the observed phenomena are reflected in dynamic dielectric properties of the observed object or material.

Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy has been recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This issue inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Waals interaction. To do this, we made correlative far- and near-field characterizations validated by first-principle calculations that reveal a huge birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this remarkable anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

Integrated Lab-on-a-Chip Optical Biosensor Using Ultrathin Silicon Waveguide SOI MMI Device

Waveguides with sub-100 nm thickness offer a promising platform for sensors. We designed and analyzed multimode interference (MMI) devices using these ultrathin platforms for use as biosensors. To verify our design methodology, we compared the measured and simulated spectra of fabricated 220-nm-thick MMI devices. Designs of the MMI biosensors based on the sub-100 nm platforms have been optimized using finite difference time domain simulations. At a length of 4 mm, the 50-nm-thick MMI sensor provides a sensitivity of roughly 420 nm/RIU and with a figure of merit (FOM) definition of sensitivity/full-width-at-half-maximum, the FOM is 133. On the other hand, using a thickness of 70 nm results in a more compact design—only 2.4 mm length was required to achieve a similar FOM, 134, with a sensitivity of 330 nm/RIU. The limits of detection (LOD) were calculated to be 7.1 × 10⁻⁶ RIU and 8.6 × 10⁻⁶ RIU for the 50 nm and the 70-nm-thick sensor, respectively. The LOD for glucose sensing was calculated to be less than 10 mg dL⁻¹ making it useful for detecting glucose in the diabetic range. The biosensor is also predicted to be able to detect layers of protein, such as biotin-streptavidin as thin as 1 nm. The ultrathin SOI waveguide platform is promising in biosensing applications using this simple MMI structure.