Microwave Photon Detectors Based on Semiconducting Double Quantum Dots

Continuous Microwave Photon Counting by Semiconductor-Superconductor Hybrids

We present a continuous microwave photon counter based on superconducting cavity-coupled semiconductor quantum dots. The device utilizes photon-assisted tunneling in a double quantum dot with tunneling events being probed by a third dot. Our device detects both single and multiple-photon absorption events independently, thanks to the energy tunability of a two-level double-dot absorber. We show that the photon-assisted tunnel rates serve as the measure of the cavity photon state in line with the P(E) theory-a theoretical framework delineating the mediation of the cavity photon field via a two-level absorber. We further describe the single photon detection using the Jaynes-Cummings input-output theory and show that it agrees with the P(E) theory predictions at a low-power regime.

THz quantum gap: exploring potential approaches for generating and detecting non-classical states of THz light

Over the past few decades, THz technology has made considerable progress, evidenced by the performance of current THz sources and detectors, as well as the emergence of several THz applications. However, in the realm of quantum technologies, the THz spectral domain is still in its infancy, unlike neighboring spectral domains that have flourished in recent years. Notably, in the microwave domain, superconducting qubits currently serve as the core of quantum computers, while quantum cryptography protocols have been successfully demonstrated in the visible and telecommunications domains through satellite links. The THz domain has lagged behind in these impressive advancements. Today, the current gap in the THz domain clearly concerns quantum technologies. Nonetheless, the emergence of quantum technologies operating at THz frequencies will potentially have a significant impact. Indeed, THz radiation holds significant promise for wireless communications with ultimate security owing to its low sensitivity to atmospheric disturbances. Moreover, it has the potential to raise the operating temperature of solid-state qubits, effectively addressing existing scalability issues. In addition, THz radiation can manipulate the quantum states of molecules, which are recognized as new platforms for quantum computation and simulation with long range interactions. Finally, its ability to penetrate generally opaque materials or its resistance to Rayleigh scattering are very appealing features for quantum sensing. In this perspective, we will discuss potential approaches that offer exciting prospects for generating and detecting non-classical states of THz light, thereby opening doors to significant breakthroughs in THz quantum technologies.

Detecting Single Microwave Photons with NV Centers in Diamond

We propose a scheme for detecting single microwave photons using dipole-induced transparency (DIT) in an optical cavity resonantly coupled to a spin-selective transition of a negatively charged nitrogen-vacancy (NV^-) defect in diamond crystal lattices. In this scheme, the microwave photons control the interaction of the optical cavity with the NV^- center by addressing the spin state of the defect. The spin, in turn, is measured with high fidelity by counting the number of reflected photons when the cavity is probed by resonant laser light. To evaluate the performance of the proposed scheme, we derive the governing master equation and solve it through both direct integration and the Monte Carlo approach. Using these numerical simulations, we then investigate the effects of different parameters on the detection performance and find their corresponding optimized values. Our results indicate that detection efficiencies approaching 90% and fidelities exceeding 90% could be achieved when using realistic optical and microwave cavity parameters.

Energetics of Microwaves Probed by Double Quantum Dot Absorption

We explore the energetics of microwaves interacting with a double quantum dot photodiode and show wave-particle aspects in photon-assisted tunneling. The experiments show that the single-photon energy sets the relevant absorption energy in a weak-drive limit, which contrasts the strong-drive limit where the wave amplitude determines the relevant-energy scale and opens up microwave-induced bias triangles. The threshold condition between these two regimes is set by the fine-structure constant of the system. The energetics are determined here with the detuning conditions of the double dot system and stopping-potential measurements that constitute a microwave version of the photoelectric effect.

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.

Efficient and continuous microwave photoconversion in hybrid cavity-semiconductor nanowire double quantum dot diodes

Converting incoming photons to electrical current is the key operation principle of optical photodetectors and it enables a host of emerging quantum information technologies. The leading approach for continuous and efficient detection in the optical domain builds on semiconductor photodiodes. However, there is a paucity of efficient and continuous photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot resonantly coupled to a cavity. In particular, in our photodiode device, an absorbed photon gives rise to a single electron tunneling through the double dot, with a conversion efficiency reaching 6%.

Efficient conversion of microwave photons into electrical current would enable several applications in quantum technologies, especially if one could step outside of the gated-time regime. Here, the authors demonstrate continuous-time microwave photoconversion in double quantum dots with 6% efficiency.