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Zhang Y, Jiang Y, Tang C, Deng C, Du F, He J, Hu Q, Wang Q, Yu H, Wang Z. Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures. MICROMACHINES 2024; 15:195. [PMID: 38398924 PMCID: PMC10893363 DOI: 10.3390/mi15020195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Revised: 01/22/2024] [Accepted: 01/24/2024] [Indexed: 02/25/2024]
Abstract
The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.
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Affiliation(s)
- Yi Zhang
- Faculty of Engineering, The University of Hong Kong, Hong Kong 999077, China;
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Yang Jiang
- Faculty of Engineering, The University of Hong Kong, Hong Kong 999077, China;
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Chuying Tang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Chenkai Deng
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Fangzhou Du
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Jiaqi He
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Qiaoyu Hu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Qing Wang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; (C.T.); (C.D.); (F.D.); (J.H.); (Q.H.); (Q.W.); (H.Y.)
| | - Zhongrui Wang
- Faculty of Engineering, The University of Hong Kong, Hong Kong 999077, China;
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