ZnO Thin Films Growth Optimization for Piezoelectric Application

Effect of Al Incorporation on the Structural and Optical Properties of Sol-Gel AZO Thin Films

ZnO and Al-doped ZnO (AZO) thin films were prepared using the sol-gel method and deposited on a Silicon (Si(100)) substrate using the dipping technique. The structure, morphology, thickness, optical constants in the spectral range 300-1700 nm, bandgap (E_g) and photoluminescence (PL) properties of the films were analyzed using X-ray diffractometry (XRD), X-ray fluorescence (XRF), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), Raman analysis and PL spectroscopy. The results of the structure and morphology analyses showed that the thin films are polycrystalline with a hexagonal wurtzite structure, as well as continuous and homogeneous. The PL background and broader peaks observable in the Raman spectra of the AZO film and the slight increase in the optical band gap of the AZO thin film, compared to undoped ZnO, highlight the effect of defects introduced into the ZnO lattice and an increase in the charge carrier density in the AZO film. The PL emission spectra of the AZO thin film showed a strong UV line corresponding to near-band-edge ZnO emission along with weak green and red emission bands due to deep-level defects, attributed to the oxygen-occupied zinc vacancies (O_Zn lattice defects).

UV Sensor Based on Surface Acoustic Waves in ZnO/Fused Silica

Zinc oxide (ZnO) thin films have been grown by radio frequency sputtering technique on fused silica substrates. Optical and morphological characteristics of as-grown ZnO samples were measured by various techniques; an X-ray diffraction spectrum showed that the films exhibited hexagonal wurtzite structure and were c-axis-oriented normal to the substrate surface. Scanning electron microscopy images showed the dense columnar structure of the ZnO layers, and light absorption measurements allowed us to estimate the penetration depth of the optical radiation in the 200 to 480 nm wavelength range and the ZnO band-gap. ZnO layers were used as a basic material for surface acoustic wave (SAW) delay lines consisting of two Al interdigitated transducers (IDTs) photolithographically implemented on the surface of the piezoelectric layer. The Rayleigh wave propagation characteristics were tested in darkness and under incident UV light illumination from the top surface of the ZnO layer and from the fused silica/ZnO interface. The sensor response, i.e., the wave velocity shift due to the acoustoelectric interaction between the photogenerated charge carriers and the electric potential associated with the acoustic wave, was measured for different UV power densities. The reversibility and repeatability of the sensor responses were assessed. The time response of the UV sensor showed a rise time and a recovery time of about 10 and 13 s, respectively, and a sensitivity of about 318 and 341 ppm/(mW/cm²) for top and bottom illumination, respectively. The ZnO/fused silica-based SAW UV sensors can be interrogated across the fused silica substrate thanks to its optical transparency in the UV range. The backlighting interrogation can find applications in harsh environments, as it prevents the sensing photoconductive layer from aggressive environmental effects or from any damage caused by cleaning the surface from dust which could deteriorate the sensor's performance. Moreover, since the SAW sensors, by their operating principle, are suitable for wireless reading via radio signals, the ZnO/fused-silica-based sensors have the potential to be the first choice for UV sensing in harsh environments.