Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Silicon nanowire piezoresistor and its applications: a review

Monocrystalline bulk silicon with doped impurities has been the widely preferred piezoresistive material for the last few decades to realize micro-electromechanical system (MEMS) sensors. However, there has been a growing interest among researchers in the recent past to explore other piezoresistive materials with varied advantages in order to realize ultra-miniature high-sensitivity sensors for area-constrained applications. Of the various alternative piezoresistive materials, silicon nanowires (SiNWs) are an attractive choice due to their benefits of nanometre range dimensions, giant piezoresistive coefficients, and compatibility with the integrated circuit fabrication processes. This review article elucidates the fundamentals of piezoresistance and its existence in various materials, including silicon. It comprehends the piezoresistance effect in SiNWs based on two different biasing techniques, viz., (i) ungated and (ii) gated SiNWs. In addition, it presents the application of piezoresistive SiNWs in MEMS-based pressure sensors, acceleration sensors, flow sensors, resonators, and strain gauges.

Application of p and n-Type Silicon Nanowires as Human Respiratory Sensing Device

Accurate and fast breath monitoring is of great importance for various healthcare applications, for example, medical diagnoses, studying sleep apnea, and early detection of physiological disorders. Devices meant for such applications tend to be uncomfortable for the subject (patient) and pricey. Therefore, there is a need for a cost-effective, lightweight, small-dimensional, and non-invasive device whose presence does not interfere with the observed signals. This paper reports on the fabrication of a highly sensitive human respiratory sensor based on silicon nanowires (SiNWs) fabricated by a top-down method of metal-assisted chemical-etching (MACE). Besides other important factors, reducing the final cost of the sensor is of paramount importance. One of the factors that increases the final price of the sensors is using gold (Au) electrodes. Herein, we investigate the sensor's response using aluminum (Al) electrodes as a cost-effective alternative, considering the fact that the electrode's work function is crucial in electronic device design, impacting device electronic properties and electron transport efficiency at the electrode-semiconductor interface. Therefore a comparison is made between SiNWs breath sensors made from both p-type and n-type silicon to investigate the effect of the dopant and electrode type on the SiNWs respiratory sensing functionality. A distinct directional variation was observed in the sample's response with Au and Al electrodes. Finally, performing a qualitative study revealed that the electrical resistance across the SiNWs renders greater sensitivity to breath than to dry air pressure. No definitive research demonstrating the mechanism behind these effects exists, thus prompting our study to investigate the underlying process.