Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

The effect of tensile and bending strain on the electrical properties of p-type 〈110〉 silicon nanowires

In this study, electromechanical responses induced by uniaxial tensile and bending deformation were obtained for p-type 〈110〉-oriented Si whiskers by in situ transmission electron microscopy (TEM). Ohmic contacts between the nanowires (NWs) and electrodes were achieved using electron-beam-induced carbon deposition. Results show that enhancements in the carrier transport properties were achieved under both uniaxial tensile and bending strains. With the strain increased to 1.5% before fracture, the improvement in the conductance reached a maximum, which was as large as 24.2%, without any sign of saturation. On the other hand, under 5.8% bending strain, a 67% conductivity enhancement could be achieved. This study should provide important insight into the performance of nanoscale-strained Si.