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New Candidate Multicomponent Chalcogenide Glasses for Supercontinuum Generation. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8112082] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Broadband supercontinuum (SC) generation requires host material attributes defined by both optical and physical properties and the material’s manufacturability. We review and define the trade-offs in these attributes as applied to fiber or planar film applications based on homogeneous glass property data, and provide a series of examples of how one might optimize such attributes through material compositional and morphology design. As an example, we highlight the role of varying composition, microstructure, and linear/nonlinear optical properties, such as transmittance, refractive index, and the multiphoton absorption coefficient, for a series of novel multicomponent chalcogenide glasses within a model GeSe2-As2Se3-PbSe (GAP-Se) system. We report key optical property variation as a function of composition and form, and discuss how such glasses, suitable for both fiber and planar film processing, could lend themselves as candidates for use in SC generation. We demonstrate the impact of starting glass composition and morphology and illustrate how tailoring composition and form (bulk versus film) leads to significant variation in linear, nonlinear, and dispersive optical property behavior within this system that enables design options that are attractive to optimization of desirable SC performance, based on optical composites.
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Novak S, Lin PT, Li C, Lumdee C, Hu J, Agarwal A, Kik PG, Deng W, Richardson K. Direct Electrospray Printing of Gradient Refractive Index Chalcogenide Glass Films. ACS APPLIED MATERIALS & INTERFACES 2017; 9:26990-26995. [PMID: 28722394 DOI: 10.1021/acsami.7b06140] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer using an optimized electrospray (ES) deposition process. Using solution-derived glass precursors, IR-transparent Ge23Sb7S70 and As40S60 glass films of programmed thickness are fabricated to yield a bilayer structure, resulting in an effective gradient refractive index (GRIN) film. Optical and compositional analysis tools confirm the optical and physical nature of the gradient in the resulting high-optical-quality films, demonstrating the power of direct printing of multimaterial structures compatible with planar photonic fabrication protocols. The potential application of such tailorable materials and structures as they relate to the enhancement of sensitivity in chalcogenide glass based planar chemical sensor device design is presented. This method, applicable to a broad cross section of glass compositions, shows promise in directly depositing GRIN films with tunable refractive index profiles for bulk and planar optical components and devices.
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Affiliation(s)
- Spencer Novak
- Department of Materials Science and Engineering, School of Engineering and Science, Clemson University , 161 Sirrine Hall Clemson, South Carolina 29634, United States
- CREOL, The College of Optics and Photonics, University of Central Florida , 4304 Scorpius Street, Orlando, Florida 32816, United States
| | - Pao Tai Lin
- Department of Electrical and Computer Engineering and Department of Materials Science and Engineering, Texas A&M University , 3128 TAMU, 188 Bizzell Street, College Station, Texas 77843, United States
| | - Cheng Li
- CREOL, The College of Optics and Photonics, University of Central Florida , 4304 Scorpius Street, Orlando, Florida 32816, United States
| | - Chatdanai Lumdee
- CREOL, The College of Optics and Photonics, University of Central Florida , 4304 Scorpius Street, Orlando, Florida 32816, United States
| | - Juejun Hu
- Microphotonics Center, Massachusetts Institute of Technology , Room 13-4118, 77 Masssachusetts Avenue, Cambridge, Massachusetts 02139-4307, United States
| | - Anuradha Agarwal
- Microphotonics Center and Department of Materials Science and Engineering, Massachusetts Institute of Technology , Room 13-4126, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-4307, United States
| | - Pieter G Kik
- CREOL, The College of Optics and Photonics, University of Central Florida , 4304 Scorpius Street, Orlando, Florida 32816, United States
| | - Weiwei Deng
- Department of Mechanical Engineering, Virginia Polytechnic Institute and State University , 635 Price Fork Road, Blacksburg, Virginia 24061, United States
| | - Kathleen Richardson
- CREOL, The College of Optics and Photonics, University of Central Florida , 4304 Scorpius Street, Orlando, Florida 32816, United States
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Gu T, Gao J, Ostroumov EE, Jeong H, Wu F, Fardel R, Yao N, Priestley RD, Scholes GD, Loo YL, Arnold CB. Photoluminescence of Functionalized Germanium Nanocrystals Embedded in Arsenic Sulfide Glass. ACS APPLIED MATERIALS & INTERFACES 2017; 9:18911-18917. [PMID: 28485911 DOI: 10.1021/acsami.7b02520] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Embedding metallic and semiconductor nanoparticles in a chalcogenide glass matrix effectively modifies the photonic properties. Such nanostructured materials could play an important role in optoelectronic devices, catalysis, and imaging applications. In this work, we fabricate and characterize germanium nanocrystals (Ge NCs) embedded in arsenic sulfide thin films by pulsed laser ablation in aliphatic amine solutions. Unstable surface termination of aliphatic groups and stable termination by amine on Ge NCs are indicated by Raman and Fourier-transform infrared spectroscopy measurements. A broad-band photoluminescence in the visible range is observed for the amine functionalized Ge NCs. A noticeable enhancement of fluorescence is observed for Ge NCs in arsenic sulfide, after annealing to remove the residual solvent of the glass matrix.
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Affiliation(s)
- Tingyi Gu
- Electrical and Computer Engineering, University of Delaware , Newark, Delaware 19716, United States
| | - Jia Gao
- Department of Chemical and Biological Engineering, Princeton University , Princeton, New Jersey 08544, United States
| | - Evgeny E Ostroumov
- Department of Chemistry, Princeton University , Princeton, New Jersey 08544, United States
| | - Hyuncheol Jeong
- Department of Chemical and Biological Engineering, Princeton University , Princeton, New Jersey 08544, United States
| | - Fan Wu
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Romain Fardel
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
- Department of Mechanical and Aerospace Engineering, Princeton University , Princeton, New Jersey 08544, United States
| | - Nan Yao
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Rodney D Priestley
- Department of Chemical and Biological Engineering, Princeton University , Princeton, New Jersey 08544, United States
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Gregory D Scholes
- Department of Chemistry, Princeton University , Princeton, New Jersey 08544, United States
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Yueh-Lin Loo
- Department of Chemical and Biological Engineering, Princeton University , Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University , Princeton, New Jersey 08544, United States
| | - Craig B Arnold
- Princeton Institute for the Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
- Department of Mechanical and Aerospace Engineering, Princeton University , Princeton, New Jersey 08544, United States
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