Electrochemical behaviors of Indium

Pulsing Liquid Alloys for Nanomaterials Synthesis

Although it remains unexplored, the direct synthesis and expulsion of metals from alloys can offer many opportunities. Here, such a phenomenon is realized electrochemically by applying a polarizing voltage signal to liquid alloys. The signal induces an abrupt interfacial perturbation at the Ga-based liquid alloy surface and results in an unrestrained discharge of minority elements, such as Sn, In, and Zn, from the liquid alloy. We show that this can occur by either changing the surface tension or inducing a reversible redox reaction at the alloys' interface. The expelled metals exhibit nanosized and porous morphologies, and depending on the cell electrochemistry, these metals can be passivated with oxide layers or fully oxidized into distinct nanostructures. The proposed concept of metal expulsion from liquid alloys can be extended to a wide variety of molten metals for producing metallic and metallic compound nanostructures for advanced applications.

Electrodeposition of Indium on Glassy Carbon from Tetrabutylammonium Chloride Containing Solutions

The effectiveness of tetrabutylammonium chloride (TBACh) as inhibition additive of dendritic growth of indium has been investigated by means of cyclic voltammetry and chronoamperometry methods. The rotating disk electrode (RDE) method allowed the calculation of the diffusion coefficient of In3+ ions using the Levich equation, at 25 °C is 4.41 × 10–6 cm2/s. Diffusion coefficient of indium ions determined by chronoamperometry using the Cottrell law (6.63 × 10–6 cm2/s) is in consistent with the value calculated by the Levich equation. The addition of tetrabutylammonium ions to the electrolyte reduces the diffusion coefficient and inhibits the cathodic process by increasing the activation energy from 10.5 kJ/mol to 20.7 kJ/mol. The indium nucleation and growth on glassy carbon in chloride solutions was studied by single potentiostatic pulse techniques. The nucleation mechanism was evaluated by analyzing the influence of different TBACh ion concentration and applied potentials. The electrocrystallization mechanisms were determined by fitting the experimental non-dimensional current transients on the basis nucleation and growth model developed by Scharifker-Hills. The type of nucleation corresponding to the progressive three-dimensional nucleation with diffusion control is determined. Based on theoretical models of 3D multiple nucleation from the potentiostatic current transients were calculated nucleation characteristics, such as the stationary nucleation rate, saturation nucleus density and the average grains radius of indium deposits. The leveling action of TBACh on the electrodeposition of indium at concentration of 10-4 M was found.

Sorption Properties of Chitosan in the Refining of Rough Indium

The degree of purity of cathode deposits during the electrochemical refining of rough indium depends on the content of impurity metals in the electrolyte. In this work, an additional sorption purification of the refining electrolyte was carried out in order to reduce the content of such impurity metals as cadmium, lead, copper. Chitosan was used as a sorbent due to high sorption properties with respect to heavy metal ions. The determination of the concentration of the studied metals before and after the sorption was carried out by the method of differential pulse anodic stripping voltammetry (DPASV). The experimental results allowed to calculate the amount of metal sorbed by chitosan and the efficiency of its removal. The Langmuir and Freundlich adsorption models were applied to describe the equilibrium isotherms and isotherm constants were determined. The Langmuir model agrees very well with experimental data. An inductively coupled plasma optical emission spectroscopy (ICP-OES) method was used to determine the presence of impurity metals and the degree of purity of electrorefined indium. The use of chitosan as a sorbent in the purification of rough indium allows to reduce the concentration of impurity metals in cathode deposits and to increase the content of the base metal to 99.9994%.

Insights into Interfacial Changes and Photoelectrochemical Stability of In(x)Ga(1-x)N (0001) Photoanode Surfaces in Liquid Environments

The long-term stability of InGaN photoanodes in liquid environments is an essential requirement for their use in photoelectrochemistry. In this paper, we investigate the relationships between the compositional changes at the surface of n-type In(x)Ga(1-x)N (x ∼ 0.10) and its photoelectrochemical stability in phosphate buffer solutions with pH 7.4 and 11.3. Surface analyses reveal that InGaN undergoes oxidation under photoelectrochemical operation conditions (i.e., under solar light illumination and constant bias of 0.5 VRHE), forming a thin amorphous oxide layer having a pH-dependent chemical composition. We found that the formed oxide is mainly composed of Ga-O bonds at pH 7.4, whereas at pH 11.3 the In-O bonds are dominant. The photoelectrical properties of InGaN photoanodes are intimately related to the chemical composition of their surface oxides. For instance, after the formation of the oxide layer (mainly Ga-O bonds) at pH 7.4, no photocurrent flow was observed, whereas the oxide layer (mainly In-O bonds) at pH 11.3 contributes to enhance the photocurrent, possibly because of its reported high photocatalytic activity. Once a critical oxide thickness was reached, especially at pH 7.4, no significant changes in the photoelectrical properties were observed for the rest of the test duration. This study provides new insights into the oxidation processes occurring at the InGaN/liquid interface, which can be exploited to improve InGaN stability and enhance photoanode performance for biosensing and water-splitting applications.

Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.

Role of Indium Alloying with Lead as a Means to Reduce the Passivation Phenomena in Lead/Acid Batteries

The influence of indium content on the anodic behaviour of Pb-In alloys in 4 M H2SO4solution is investigated by potentiodynamic, potentiostatic, chronopotentiometric, and cyclic voltammetric techniques. The composition and microstructure of the corrosion layer on Pb-In alloys are characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy analysis (EDX), and scanning electron microscopy (SEM). The potentiodynamic and chronopotentiometric curves show that the anodic behavior of all investigated electrodes exhibits active/passive transition. The active dissolution (except for alloy I) and passive currents increase with increasing both In content and temperature. This indicates that the conductivity of the anodic film on Pb-In alloy is enhanced. This study exhibits that indium catalyses the oxidation of Pb (II) to Pb (IV) and facilitates the formation of a more highly conductive corrosion layer on lead. Alloy I (0.5% In) exhibits that the corrosion rate is lower, while the passive current is higher than that of Pb. XRD, EDX, and SEM results reveal that the formation of both PbSO4and PbO on the surface decreases gradually with increasing In level in the alloy and completely disappear at higher In content (15% In). Therefore, recharge of the battery will be improved due to indium addition to Pb.