The Role of Nitrogen Dopants in ZnO Nanoparticle-Based Light Emitting Diodes

In this work, nitrogen-doped ZnO nanoparticles were synthesized in various conditions by the gas evaporation method with DC arc plasma. Nitrogen concentrations of 6.38 × 1018 cm−3 to 2.6 × 1019 cm−3 were obtained at a chamber pressure of 150 torr, using arc currents of 20 A to 70 A. The intensities of local vibrational modes at 275 cm−1 and 581 cm−1 in the Raman spectra of ZnO nanoparticles showed a dependency on the nitrogen concentration in the ZnO nanoparticles. The ratios of donor–acceptor pair and exciton emissions in the photoluminescence spectra of nitrogen-doped ZnO nanoparticles, and the electroluminescence of light-emitting diodes based on these nanoparticles, were nearly proportional to the Raman peak’s intensity at 275 cm−1. The results indicated that the nitrogen dopants in the ZnO nanoparticles were acting as an acceptor.

Spectroscopic study and optical and electrical properties of Ti-doped ZnO thin films by spray pyrolysis

Zinc oxide films were doped with different concentrations of Ti on glass substrates at 400°C by spray pyrolysis technique. The films exhibited single phase ZnO for low concentrations of Ti. Wurtzite ZnO peaks were observed at higher doping concentration with decreased crystallinity. Crystallite size, strain and dislocation density were evaluated from the X-ray diffraction data. Surface morphology of the films indicated that a remarkable decrease in grain size with increasing of Ti concentration. The band gap of the films was found to be increased from 3.20 eV to 3.32 eV as the concentration of Ti doping increases. The resistivity of the films decreased from 9×10(5) Ω cm to 9×10(4) Ω cm with the increase of Ti doping concentration. Both Raman spectroscopy and room temperature photoluminescence exhibited characteristic peaks that confirmed the formation of ZnO phase.