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Shikin AM, Rybkina AA, Estyunin DA, Klimovskikh II, Rybkin AG, Filnov SO, Koroleva AV, Shevchenko EV, Likholetova MV, Voroshnin VY, Petukhov AE, Kokh KA, Tereshchenko OE, Petaccia L, Di Santo G, Kumar S, Kimura A, Skirdkov PN, Zvezdin KA, Zvezdin AK. Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. Sci Rep 2021; 11:23332. [PMID: 34857800 PMCID: PMC8639783 DOI: 10.1038/s41598-021-02493-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 10/27/2021] [Indexed: 12/01/2022] Open
Abstract
Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.
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Affiliation(s)
- A M Shikin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.
| | - A A Rybkina
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - D A Estyunin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - I I Klimovskikh
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - A G Rybkin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - S O Filnov
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - A V Koroleva
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - E V Shevchenko
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - M V Likholetova
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - V Yu Voroshnin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Helmholtz-Zentrum Berlin für Materialien und Energie, BESSY II, 12489, Berlin, Germany
| | - A E Petukhov
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - K A Kokh
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Kemerovo State University, Kemerovo, 650000, Russia.,Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russia
| | - O E Tereshchenko
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Novosibirsk State University, Novosibirsk, 630090, Russia.,A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
| | - L Petaccia
- Elettra Sincrotrone Trieste, 34149, Trieste, Italy
| | - G Di Santo
- Elettra Sincrotrone Trieste, 34149, Trieste, Italy
| | - S Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima, Hiroshima, 739-0046, Japan
| | - A Kimura
- Graduate School of Science, Hiroshima University, Higashi-Hiroshima, 739-8526, Japan
| | - P N Skirdkov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - K A Zvezdin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - A K Zvezdin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, 119991, Russia
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Rybkina AA, Rybkin AG, Klimovskikh II, Skirdkov PN, Zvezdin KA, Zvezdin AK, Shikin AM. Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory. Nanotechnology 2020; 31:165201. [PMID: 31860886 DOI: 10.1088/1361-6528/ab6470] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is a very attractive memory technology for near future computers because it has various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell, consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element, a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required to record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.
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Affiliation(s)
- A A Rybkina
- Saint Petersburg State University, Saint Petersburg, 198504 Russia
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Klimovskikh II, Sostina D, Petukhov A, Rybkin AG, Eremeev SV, Chulkov EV, Tereshchenko OE, Kokh KA, Shikin AM. Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi 2Te 2.4Se 0.6. Sci Rep 2017; 7:45797. [PMID: 28378826 PMCID: PMC5381095 DOI: 10.1038/srep45797] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2017] [Accepted: 03/02/2017] [Indexed: 11/08/2022] Open
Abstract
Two- and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle- and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.
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Affiliation(s)
| | - D. Sostina
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - A. Petukhov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - A. G. Rybkin
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - S. V. Eremeev
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Institute of Strength Physics and Materials Science, 634055, Tomsk, Russia
- Tomsk State University, 634050, Tomsk, Russia
| | - E. V. Chulkov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain
| | - O. E. Tereshchenko
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
| | - K. A. Kokh
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
- V.S. Sobolev Institute of Geology and Mineralogy, 630090, Novosibirsk, Russia
| | - A. M. Shikin
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
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Rybkina AA, Rybkin AG, Adamchuk VK, Marchenko D, Varykhalov A, Sánchez-Barriga J, Shikin AM. The graphene/Au/Ni interface and its application in the construction of a graphene spin filter. Nanotechnology 2013; 24:295201. [PMID: 23799659 DOI: 10.1088/0957-4484/24/29/295201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A modification of the contact of graphene with ferromagnetic electrodes in a model of the graphene spin filter allowing restoration of the graphene electronic structure is proposed. It is suggested for this aim to intercalate into the interface between the graphene and the ferromagnetic (Ni or Co) electrode a Au monolayer to block the strong interaction between the graphene and Ni (Co) and, thus, prevent destruction of the graphene electronic structure which evolves in direct contact of graphene with Ni (Co). It is also suggested to insert an additional buffer graphene monolayer with the size limited by that of the electrode between the main graphene sheet providing spin current transport and the Au/Ni electrode injecting the spin current. This will prevent the spin transport properties of graphene from influencing contact phenomena and eliminate pinning of the graphene electronic structure relative to the Fermi level of the metal, thus ensuring efficient outflow of injected electrons into the graphene. The role of the spin structure of the graphene/Au/Ni interface with enhanced spin-orbit splitting of graphene π states is also discussed, and its use is proposed for additional spin selection in the process of the electron excitation.
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Affiliation(s)
- A A Rybkina
- St.-Petersburg State University, Ulyanovskaya 1, Petrodvoretz, St.-Petersburg 198504, Russia
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