Microfluidics for core-shell drug carrier particles - a review

Core-shell drug-carrier particles are known for their unique features. Due to the combination of superior properties not exhibited by the individual components, core-shell particles have gained a lot of interest. The structures could integrate core and shell characteristics and properties. These particles were designed for controlled drug release in the desired location. Therefore, the side effects would be minimized. So, these particles' advantages have led to the introduction of new methods and ideas for their fabrication. In the past few years, the generation of drug carrier core-shell particles in microfluidic chips has attracted much attention. This method makes it possible to produce particles at nanometer and micrometer levels of the same shape and size; it usually costs less than other methods. The other advantages of using microfluidic techniques compared to conventional bulk methods are integration capability, reproducibility, and higher efficiency. These advantages have created a positive outlook on this approach. This review gives an overview of the various fluidic concepts that are used to generate microparticles or nanoparticles. Also, an overview of traditional and more recent microfluidic devices and their design and structure for the generation of core-shell particles is given. The unique benefits of the microfluidic technique for core-shell drug carrier particle generation are demonstrated.

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender to meet CMOS footprint requirements while simultaneously delivering high current drive for high performance specifications and subthreshold swing below the Boltzmann limit for low power operation. In this work, VGAA nanowire GaSb/InAs C-S TFETs are demonstrated experimentally for the first time with key device properties of subthreshold swing S = 40 mV/dec (V_d = 10 mV) and current drive up to 40 μA/wire (V_d = 0.3 V, diameter d = 50 nm) while dimensions including core diameter d, shell thickness and gate length are scaled towards CMOS requirements. The experimental data in conjunction with TCAD modeling reveal interface trap density requirements to reach industry standard off-current specifications.

Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm. We have employed a tight-binding mode-space NEGF technique demonstrating by far the fastest (up to 10 000  ×  faster) but accurate (error  <  1%) atomistic simulations to date. Such technique and capability opens new avenues to explore and understand the physics of nanoscale and mesoscopic devices dominated by quantum effects. In particular, our method addresses in an unprecedented way the technologically-relevant case of band-to-band tunneling (BTBT) in III-V nanowire broken-gap heterojunction tunnel-FETs (HTFETs). We demonstrate an accurate match of simulated BTBT currents to experimental measurements in a 12 nm diameter InAs NW and in an InAs/GaSb Esaki tunneling diode. We apply our TB MS simulations and report the first in-depth atomistic study of the scaling potential of III-V GAA nanowire HTFETs including the effect of electron-phonon scattering and discrete dopant impurity band tails, quantifying the benefits of this technology for low-power low-voltage CMOS applications.