Directional quantum dot emission by soft-stamping on silicon Mie resonators

We present a soft-stamping method to selectively print a homogenous layer of CdSeTe/ZnS core-shell quantum dots (QDs) on top of an array of Si nanocylinders with Mie-type resonant modes. Using this new method, we gain accurate control of the quantum dot's angular emission through engineered coupling of the QDs to these resonant modes. Using numerical simulations we show that the emission into or away from the Si substrate can be precisely controlled by the QD position on the nanocylinder. QDs centered on a 400 nm diameter nanocylinder surface show 98% emission directionality into the Si substrate. Alternatively, for homogenous ensembles placed over the nanocylinder top-surface, the upward emission is enhanced 10-fold for 150 nm diameter cylinders. Experimental PL intensity measurements corroborate the simulated trends with cylinder diameter. PL lifetime measurements reflect well the variations of the local density of states at the QD position due to coupling to the resonant cylinders. These results demonstrate that the soft imprint technique provides a unique manner to directly integrate optical emitters with a wide range of nanophotonic geometries, with potential applications in LEDs, luminescent solar concentrators, and up- and down-conversion schemes for improved photovoltaics.

Realistic Efficiency Limits for Singlet-Fission Silicon Solar Cells

Singlet fission is a carrier multiplication mechanism that could make silicon solar cells much more efficient. The singlet-fission process splits one high-energy spin-singlet exciton into two lower-energy spin-triplet excitons. We calculated the efficiency potential of three technologically relevant singlet-fission silicon solar cell implementations. We assume realistic but optimistic parameters for the singlet-fission material and investigate the effect of singlet energy and entropic gain. If the transfer of triplet excitons occurs via charge transfer, the maximum efficiency is 34.6% at a surprisingly small singlet energy of 1.85 eV. For the Dexter-type triplet energy transfer, the maximum efficiency is 32.9% at a singlet energy of 2.15 eV. For Förster resonance energy transfer (FRET), the triplet excitons are first transferred into a quantum dot, from which they then undergo FRET into silicon. For this transfer mechanism, the maximum efficiency is 28.% at a singlet energy of 2.33 eV. We show that the efficiency gain from singlet fission is larger the more efficient the silicon base cell is, which stands in contrast to tandem perovskite-silicon solar cells.

Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells

Singlet fission in tetracene generates two triplet excitons per absorbed photon. If these triplet excitons can be effectively transferred into silicon (Si), then additional photocurrent can be generated from photons above the bandgap of Si. This could alleviate the thermalization loss and increase the efficiency of conventional Si solar cells. Here, we show that a change in the polymorphism of tetracene deposited on Si due to air exposure facilitates triplet transfer from tetracene into Si. Magnetic field-dependent photocurrent measurements confirm that triplet excitons contribute to the photocurrent. The decay of tetracene delayed photoluminescence was used to determine a transfer efficiency of ∼36% into Si. Our study suggests that control over the morphology of tetracene during the deposition will be of great importance to boost the triplet transfer yield further.

Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Colloidal quantum dots have found many applications and patterning them on micro- and nanoscale would open a new dimension of tunability for the creation of smaller scale (flexible) electronics or nanophotonic structures. Here we present a simple, general, one-step top-down patterning technique for colloidal quantum dots by means of direct optical or electron beam lithography. We find that both photons and electrons can induce a solubility switch of both PbS and CdSe quantum dot films. The solubility switch can be ascribed to cross-linking of the organic ligands, which we observe from exposure with deep-UV photons (5.5 eV) to extreme-UV photons (91.9 eV), and low-energy (3-70 eV) as well as highly energetic electrons (50 keV). The required doses for patterning are relatively low and feature sizes can be as small as tens of nanometers. The luminescence properties as well as carrier lifetimes remain similar after patterning.

A method to detect triplet exciton transfer from singlet fission materials into silicon solar cells: Comparing different surface treatments

Singlet fission is one of the most promising routes to overcome the single-junction efficiency limit for solar cells. Singlet fission-enhanced silicon solar cells are the most desirable implementation, but transfer of triplet excitons, the product of singlet fission, into silicon solar cells has proved to be very challenging. Here, we report on an all optical measurement technique for the detection of triplet exciton quenching at semiconductor interfaces, a necessary requirement for triplet exciton or charge transfer. The method relies on the growth of individual, single-crystal islands of the singlet fission material on the silicon surface. The islands have different heights, and we correlate these heights to the quenching efficiency of triplet excitons. The quenching efficiency is measured by spatially resolved delayed fluorescence and compared to a diffusion-quenching model. Using silicon capped with a blocking thermal oxide and aromatic monolayers, we demonstrate that this technique can quickly screen different silicon surface treatments for triplet exciton quenching.