Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

Single and double hole quantum dots in strained Ge/SiGe quantum wells

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ∼ 0.08 m ₀, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform.

Ion implantation for deterministic single atom devices

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}as heterostructures

We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

Observation of a fractional quantum hall state at nu = 1/4 in a wide GaAs quantum well

We report the observation of an even-denominator fractional quantum Hall state at nu = 1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n(e) = 2.55 x 10(11) cm(-2). We have performed transport measurements at T - 35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at nu = 1/4. Upon tilting the sample to an angle of theta = 20.3 degrees a clear fractional quantum Hall state emerges at nu = 1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.

Observation of two-dimensional classical wave localization: third sound on superfluid 4He films on a disordered substrate

We present the results of measurements of the propagation of third sound waves on superfluid 4He adsorbed to two-dimensional ordered and disordered substrates. In the disordered case we compare the experimental results to theoretical predictions of classical wave localization in such systems and conclude that classical wave localization is present in our system.

Statistical characterization of thermally evaporated rough CaF2 films

Thermal deposition of CaF2 onto a glass substrate creates a nanoscale rough surface. A series of samples with differing nominal CaF2 film thicknesses have been fabricated, and the topography has been investigated using atomic force microscopy. Measured values for the statistical characterization of the samples are presented including the exponents describing the scaling behavior of the surfaces. We find that the roughness exponent alpha=0.88+/-0.03 , the growth exponent beta=0.75+/-0.03 , and the dynamical exponent z=alpha/beta=1.17+/-0.06 . We also measure the multifractal spectra and nearest neighbor height difference probability distribution. The results are consistent with noise dominated by a power-law distribution with exponent mu+1 approximately equal to 4.6. Profilometer measurements were used to determine the porosity phi of the deposited films, which we find to be constant for all film thicknesses with phi approximately 0.46 .

Kosterlitz-Thouless transition for 4He films adsorbed to rough surfaces

We report the study of adsorption isotherms of 4He on several well characterized rough CaF2 surfaces using a quartz crystal microbalance technique at 1.672 K. The signature of decoupled mass observed on crossing the Kosterlitz-Thouless transition as a function of 4He film thickness decreases and becomes increasingly difficult to identify as the surface roughness is increased. A peak in the dissipation, indicative of the onset of superfluidity, changes little with roughness.

Evidence for power-law dominated noise in vacuum deposited CaF2

We have studied the surface roughness of CaF2 vacuum deposited on glass using atomic force microscopy for film coverages spanning an order of magnitude. We find the roughness exponent alpha=0.88+/-0.03, the growth exponent beta=0.75+/-0.03, and the dynamic exponent z=alpha/beta=1.17+/-0.06. Multifractality is also present, along with power-law behavior in the nearest neighbor height difference probability distribution. The results indicate noise dominated by a power-law distribution with exponent micro+1 approximately 4.6.