Doubly Dressed Bosons: Exciton Polaritons in a Strong Terahertz Field

We demonstrate the existence of a novel quasiparticle, an exciton in a semiconductor doubly dressed with two photons of different wavelengths: a near infrared cavity photon and terahertz (THz) photon, with the THz coupling strength approaching the ultrastrong coupling regime. This quasiparticle is composed of three different bosons, being a mixture of a matter-light quasiparticle. Our observations are confirmed by a detailed theoretical analysis, treating quantum mechanically all three bosonic fields. The doubly dressed quasiparticles retain the bosonic nature of their constituents, but their internal quantum structure strongly depends on the intensity of the applied terahertz field.

Stochastic resonance in collective exciton-polariton excitations inside a GaAs microcavity

We report the first observation of stochastic resonance in confined exciton polaritons. We evidence this phenomena by tracking the polaritons behavior through two stochastic resonance quantifiers namely the spectral magnification factor and the signal-to-noise ratio. The evolution of the stochastic resonance in the function of the modulation amplitude of the periodic excitation signal is studied. Our experimental observations are well reproduced by numerical simulations performed in the framework of the Gross-Pitaevskii equation under stochastic perturbation.

Soliton instabilities and vortex street formation in a polariton quantum fluid

Exciton polaritons have been shown to be an optimal system in order to investigate the properties of bosonic quantum fluids. We report here on the observation of dark solitons in the wake of engineered circular obstacles and their decay into streets of quantized vortices. Our experiments provide a time-resolved access to the polariton phase and density, which allows for a quantitative study of instabilities of freely evolving polaritons. The decay of solitons is quantified and identified as an effect of disorder-induced transverse perturbations in the dissipative polariton gas.

Multistability of a coherent spin ensemble in a semiconductor microcavity

Coherent manipulation of spin ensembles is a key issue in the development of spintronics. In particular, multivalued spin switching may lead to new schemes of logic gating and memories. This phenomenon has been studied with atom vapours 30 years ago, but is still awaited in the solid state. Here, we demonstrate spin multistability with microcavity polaritons in a trap. Owing to the spinor nature of these light-matter quasiparticles and to the anisotropy of their interactions, we can optically control the spin state of a single confined level by tuning the excitation power, frequency and polarization. First, we realize high-efficiency power-dependent polarization switching. Then, at constant excitation power, we evidence polarization hysteresis and determine the conditions for realizing multivalued spin switching. Finally, we demonstrate an unexpected regime, where our system behaves as a high-contrast spin trigger. These results open new pathways to the development of advanced spintronics devices and to the realization of multivalued logic circuits.

Dynamics of Trion formation in InxGa1-xAs quantum wells

We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is substantiated by time-resolved photoluminescence experiments performed on a very high quality InxGa1-xAs quantum well sample, in which the photoluminescence contributions at the energy of the trion and exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor quantum well is explained by the same model.

Femtosecond pulse generation with a diode-pumped Yb3+:YVO4 laser

A diode-pumped Yb:YVO4 laser has been passively mode locked for the first time, to our knowledge. 120 fs pulses with an average output power of 300 mW and a peak power as high as 14.5 kW are obtained by use of a semiconductor saturable-absorber mirror for passive mode locking. The optical spectrum has a 10 nm bandwidth (full width at half-maximum) and is centered at 1021 nm.

Direct observation of the mott transition in an optically excited semiconductor quantum well

We have studied density-dependent time-resolved photoluminescence from a 80 A InGaAs/GaAs single quantum well excited by picosecond pulses. We succeed in giving evidence for the transition from an exciton-dominated population to an unbound electron-hole pair population as the pair density increases. For pair densities below this excitonic Mott transition we observe a spectrally separate emission from free electron-hole pairs in addition to excitonic luminescence, thereby proving the coexistence of both species. Exciton binding energy and band gap remain unchanged even near the upper bound of this coexistence region. Above the Mott density we observe a purely exponential high energy tail of the photoluminescence and a redshift of the band gap with pair density. The transition occurs gradually between 1 x 10(10) and 1 x 10(11) cm(-2) at the carrier temperatures of our experiment.

Determination of the exciton formation in quantum wells from time-resolved interband luminescence

We present the results of a detailed time-resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated. We perform this experiment with a spectral resolution and a sensitivity of the setup, allowing us to keep the observation of these two separate contributions over a broad range of times and densities. This allows us to directly evidence the exciton formation time, which depends on the density as expected from theory. We also denote the dominant contribution of excitons to the luminescence signal, and the lack of thermodynamical equilibrium at low densities.

240-fs pulses with 22-W average power from a mode-locked thin-disk Yb:KY(WO(4))(2) laser

We demonstrate what is to our knowledge the first passively mode-locked thin-disk Yb:KY(WO(4))(2) laser. The laser produces pulses of 240-fs duration with an average power of 22 W at a center wavelength of 1028 nm. At a pulse repetition rate of 25 MHz, the pulse energy is 0.9microJ , and the peak power is as high as 3.3 MW. The beam quality is very close to the diffraction limit, with M(2)=1.1 .

Widely tunable pulse durations from a passively mode-locked thin-disk Yb:YAG laser

We demonstrate a passively mode-locked thin-disk Yb:YAG laser that generates solitonlike pulses with durations that are continuously tunable in a very wide range from 3.3 to 89 ps or from 0.83 to 1.57 ps. The average powers are typically ~12 W . Previously [Opt. Lett. 25, 859 (2000)], only pulse durations in a narrow range near 0.7 ps could be obtained from such lasers because of the effect of spatial hole burning. We achieved this much wider range by constructing a laser cavity with two different angles of incidence on the thin disk, which greatly reduces the effect of spatial hole burning.

Diode-pumped femtosecond Yb:KGd(WO(4))(2) laser with 1.1-W average power

We demonstrate what is to our knowledge the first mode-locked Yb:KGd(WO(4))(2) laser. Using a semiconductor saturable-absorber mirror for passive mode locking, we obtain pulses of 176-fs duration with an average power of 1.1 W and a peak power of 64 kW at a center wavelength of 1037 nm. We achieve pulses as short as 112 fs at a lower output power. The laser is based on a standard delta cavity and pumped by two high-brightness laser diodes, making the whole system very simple and compact. Tuning the laser by means of a knife-edge results in mode-locked pulses within a wavelength range from 1032 to 1054 nm. In cw operation, we achieve output powers as high as 1.3 W.

Semiconductor saturable-absorber mirror assisted Kerr-lens mode-locked Ti:sapphire laser producing pulses in the two-cycle regime

Pulses of sub-6-fs duration have been obtained from a Kerr-lens mode-locked Ti:sapphire laser at a repetition rate of 100 MHz and an average power of 300 mW. Fitting an ideal sech(2) to the autocorrelation data yields a 4.8-fs pulse duration, whereas reconstruction of the pulse amplitude profile gives 5.8 fs. The pulse spectrum covers wavelengths from above 950 nm to below 630 nm, extending into the yellow beyond the gain bandwidth of Ti:sapphire. This improvement in bandwidth has been made possible by three key ingredients: carefully designed spectral shaping of the output coupling, better suppression of the dispersion oscillation of the double-chirped mirrors, and a novel broadband semiconductor saturable-absorber mirror.

Femtosecond diode-pumped Nd:glass laser with more than 1 W of average output power

We have demonstrated 175-fs pulses with 1 W and 300-fs pulses with 1.2 W of average output power at a pulse repetition rate of 117 MHz from a Nd:phosphate (Schott LG 760) glass laser pumped by a 1-cm-wide, 20-W diode laser bar. Stable soliton mode locking was achieved by use of an intracavity semiconductor saturable absorber mirror. We obtained more than 2 W of average power without mode locking. Using cylindrical cavity mirrors, we adapted the laser mode inside the Nd:glass to the highly elliptical pump beam in both dimensions (tangential and sagittal axes) while maintaining a nearly ideal circular TEM(00) output beam with M(2) approximately 1.2 . Overpumping the laser mode in the tangential plane and efficient unidirectional heat removal in the sagittal plane using a 0.8-mm thin Nd:glass also contributed to the good output-beam quality.

Efficient and tunable diode-pumped femtosecond Yb:glass lasers

Diode-pumped Yb:phosphate and Yb:silicate glass lasers have been passively mode locked for the first time to the authors' knowledge. Reliable self-starting mode locking without critical cavity alignment has been achieved with intracavity semiconductor saturable-absorber mirrors and soliton mode locking. We generated pulses as short as 58 fs with the Yb:phosphate laser and 61 fs with the Yb:silicate laser at average output powers of 65 and 53 mW, respectively. The pulse repetition rate was 112 MHz. Additionally, we demonstrated tunability of femtosecond pulses from 1025 to 1065 nm for the Yb:phosphate and from 1030 to 1082 nm for the Yb:silicate glasses. The highest mode-locked output power was 405 mW, with 183-fs pulses from the phosphate glass. The diode pump power was 1.68 W, corresponding to 24% optical-to-optical efficiency. The highest cw output power was 510 mW at the same incident pump power.

Self-starting 6.5-fs pulses from a Ti:sapphire laser

We demonstrate self-starting 6.5-fs pulses from a Kerr-lens mode-locked Ti:sapphire laser with 200-mW average output power at a pulse repetition rate of ~86 M Hz. This is to our knowledge the shortest pulse ever generated directly from a laser. For dispersion compensation we used a prism pair in combination with double-chirped mirrors, which balances the higher-order dispersion of the prism pair and therefore flattens the average total group-delay dispersion in the laser cavity. For self-starting mode locking we used a broadband semiconductor saturable-absorber mirror.

60-fs pulses from a diode-pumped Nd:glass laser

We demonstrate 60-fs pulses with an average output power of 84 mW from a diode-pumped Nd:glass laser mode locked by a low-finesse antiresonant Fabry-Perot saturable absorber (A-FPSA). The mode-locked spectrum spreads over most of the available Nd:glass fluorescence bandwidth. At increased pulse energy fluence or decreased negative group-velocity dispersion, multiple pulsing was observed. We experimentally characterize this behavior, which can be explained by the saturation behavior of the A-FPSA and the limited available gain bandwidth. These considerations are significant for the design of saturable absorbers to achieve stable passive mode locking.