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Pendharkar M, Zhang B, Wu H, Zarassi A, Zhang P, Dempsey CP, Lee JS, Harrington SD, Badawy G, Gazibegovic S, Op Het Veld RLM, Rossi M, Jung J, Chen AH, Verheijen MA, Hocevar M, Bakkers EPAM, Palmstrøm CJ, Frolov SM. Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells. Science 2021; 372:508-511. [PMID: 33858990 DOI: 10.1126/science.aba5211] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2019] [Accepted: 03/13/2021] [Indexed: 11/02/2022]
Abstract
Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires that were coated with shells of tin of uniform thickness. No interdiffusion was observed at the interface between Sn and InSb. Tunnel junctions were prepared by in situ shadowing. Despite the lack of lattice matching between Sn and InSb, a 15-nanometer-thick shell of tin was found to induce a hard superconducting gap, with superconductivity persisting in magnetic field up to 4 teslas. A small island of Sn-InSb exhibits the two-electron charging effect. These findings suggest a less restrictive approach to fabricating superconducting and topological quantum circuits.
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Affiliation(s)
- M Pendharkar
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - B Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - H Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - A Zarassi
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - P Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - C P Dempsey
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - J S Lee
- California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA
| | - S D Harrington
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - G Badawy
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - S Gazibegovic
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | | | - M Rossi
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - J Jung
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - A-H Chen
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - M A Verheijen
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - M Hocevar
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - E P A M Bakkers
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - C J Palmstrøm
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.,California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA.,Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - S M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.
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Jiang Y, de Jong EJ, van de Sande V, Gazibegovic S, Badawy G, Bakkers EPAM, Frolov SM. Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets. Nanotechnology 2021; 32:095001. [PMID: 33142271 DOI: 10.1088/1361-6528/abc70f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.
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Affiliation(s)
- Y Jiang
- University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - E J de Jong
- Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - V van de Sande
- Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - S Gazibegovic
- Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - G Badawy
- Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - E P A M Bakkers
- Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - S M Frolov
- University of Pittsburgh, Pittsburgh, PA 15260, United States of America
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