Optical Memory in a Microfabricated Rubidium Vapor Cell

Scalability presents a central platform challenge for the components of current quantum network implementations that can be addressed by microfabrication techniques. We demonstrate a high-bandwidth optical memory using a warm alkali atom ensemble in a microfabricated vapor cell compatible with wafer-scale fabrication. By applying an external tesla-order magnetic field, we explore a novel ground-state quantum memory scheme in the hyperfine Paschen-Back regime, where individual optical transitions can be addressed in a Doppler-broadened medium. Working on the ^{87}Rb D_{2} line, where deterministic quantum dot single-photon sources are available, we demonstrate bandwidth-matching with hundreds of megahertz broad light pulses keeping such sources in mind. For a storage time of 80 ns we measure an end-to-end efficiency of η_{e2e}^{80  ns}=3.12(17)%, corresponding to an internal efficiency of η_{int}^{0  ns}=24(3)%, while achieving a signal-to-noise ratio of SNR=7.9(8) with coherent pulses at the single-photon level.

An efficient, tunable, and robust source of narrow-band photon pairs at the 87Rb D1 line

We present an efficient and robust source of photons at the ⁸⁷Rb D1-line (795 nm) with a narrow bandwidth of δ = 226(1) MHz. The source is based on non-degenerate, cavity-enhanced spontaneous parametric down-conversion in a monolithic optical parametric oscillator far below threshold. The setup allows for efficient coupling to single mode fibers. A heralding efficiency of η_heralded = 45(5) % is achieved, and the uncorrected number of detected photon pairs is 3.8 × 10³/(s mW). For pair generation rates up to 5 × 10⁵/s, the source emits heralded single photons with a normalized, heralded, second-order correlation function g c(2)<0.01. The source is intrinsically stable due to the monolithic configuration. Frequency drifts are on the order of δ/20 per hour without active feedback on the emission frequency. We achieved fine-tuning of the source frequency within a range of >2 GHz by applying mechanical strain.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.