Investigation of substrate influence on tin dioxide nanostructures synthesized using horizontal furnace

SnO2 nanostructures were directly synthesised by chemical vapour transport on different substrates in a horizontal furnace. The influence of substrate on the morphology of these nanostructures was investigated by changing the substrate type, coating, and temperature. The SnO2 nanowires and nanorods were one dimensional (1D) structures with widths and lengths of 50-200 nm and several micrometers respectively. Scanning electron microscope (SEM) images show formation of short nanorods with lengths of less than 1 microm on indium-tin oxide (ITO) substrates. The effect of substrate temperature on growth was studied. SnO2 nanowires were obtained using silicon substrate, and the effect of Au coating on the size and morphology of these structures was proposed. By coating the Si wafer with a thin layer of Au, the size of the nanostructure was reduced and the length increased. The differences in size and morphology are shown by transmission electron microscopy (TEM). X-ray diffraction (XRD) spectra show tetragonal structures for both substrates.

One dimensional aluminum nitride nanostructures: synthesis, structural, and luminescence properties

Aluminum nitride (AIN) is a direct bandgap semiconductor with a bandgap about 6.1 eV at room temperature, the largest among semiconductors. This paper emphasizes experimental results of the growth and optical properties of AIN nanostructures by direct nitridation. The nitridation process was performed by chemical vapor deposition method with nitrogen (N2) gas flow. AIN nanostructures were analyzed by scanning electron microscope (SEM) equipped with energy-dispersive X-ray (EDX) spectroscope and photoluminescence (PL) spectroscopy. AIN nanowires with different widths from ultrathin to thick were synthesized with this method. All of the samples had high purity without presence of any other material in EDX spectrum. The PL spectra were obtained by a 325-nm helium-cadmium (He-Cd) laser as the excitation source showing high-intensity light emitting visible wavelengths for these structures at room temperature.

Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content

Continuous wave photoluminescence (cw PL) spectroscopy has been used to study the optical properties of a set of InGaNAs epilayers and single quantum wells with nitrogen concentration less than a few per cent at different temperatures and different excitation powers. We found that nitrogen has a critical role on the emission light of InGaNAs nanostructures and the recombination mechanism. The incorporation of a few per cent of nitrogen leads to shrinkage of the InGaNAs band gap. The physical origin of such band gap reduction has been investigated both experimentally and theoretically by using a band anticrossing model. We have found that localization of excitons that have been caused by incorporation of a few per cent of nitrogen in these structures is the main explanation of such anomalous behavior observed in the low-temperature photoluminescence spectra of these nanostructures. The localization energies of carriers have been evaluated by studying the variation of the quantum well (QW) emission versus temperature, and it was found that the localization energy increases with increasing nitrogen composition. Our data also show that, with increasing excitation intensity, the PL peak position moves to higher energies (blue shift) due to the filling of localized states and capture centers for excitons by photo-generated carriers.