Spectrometer based on a compact disordered multi-mode interferometer

We present a compact, CMOS compatible, photonic integrated circuit (PIC) based spectrometer that combines a dispersive array element of SiO₂-filled scattering holes within a multimode interferometer (MMI) fabricated on the silicon-on-insulator (SOI) platform. The spectrometer has a bandwidth of 67 nm, a lower bandwidth limit of 1 nm, and a peak-to-peak resolution of 3 nm for wavelengths around 1310 nm.

Transition from Gas-like to Liquid-like Behavior in Supercritical N2

We have studied in detail the transition from gas-like to rigid liquid-like behavior in supercritical N₂ at 300 K (2.4 T_C). Our study combines neutron diffraction and Raman spectroscopy with ab initio molecular dynamics simulations. We observe a narrow transition from gas-like to rigid liquid-like behavior at ca. 150 MPa, which we associate with the Frenkel line. Our findings allow us to reliably characterize the Frenkel line using both diffraction and spectroscopy methods, backed up by simulation, for the same substance. We clearly lay out what parameters change, and what parameters do not change, when the Frenkel line is crossed.

Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators

We present a Raman mapping study of monolayer graphene G and 2D bands, after integration on silicon strip-waveguide-based micro-ring resonators (MRRs) to characterize the effects of the graphene transfer processes on its structural and optoelectronic properties. Analysis of the Raman G and 2D peak positions and relative intensities reveal that the graphene is electrically intrinsic where it is suspended over the MRR but is moderately hole-doped where it sits on top of the waveguide structure. This is suggestive of Fermi level 'pinning' at the graphene-silicon heterogeneous interface, and we estimate that the Fermi level shifts down by approximately 0.2 eV from its intrinsic value, with a corresponding peak hole concentration of ~ 3 × 10¹² cm^-2. We attribute variations in observed G peak asymmetry to a combination of a 'stiffening' of the E _2g optical phonon where the graphene is supported by the underlying MRR waveguide structure, as a result of this increased hole concentration, and a lowering of the degeneracy of the same mode as a result of localized out-of-plane 'wrinkling' (curvature effect), where the graphene is suspended. Examination of graphene integrated with two different MRR devices, one with radii of curvature r = 10 μm and the other with r = 20 μm, indicates that the device geometry has no measureable effect on the level of doping.

A monometallic lanthanide bis(methanediide) single molecule magnet with a large energy barrier and complex spin relaxation behaviour

We report a dysprosium(iii) bis(methanediide) single molecule magnet (SMM) where stabilisation of the highly magnetic states and suppression of mixing of opposite magnetic projections is imposed by a linear arrangement of negatively-charged donor atoms supported by weak neutral donors. Treatment of [Ln(BIPMTMS)(BIPMTMSH)] [Ln = Dy, 1Dy; Y, 1Y; BIPMTMS = {C(PPh2NSiMe3)2}2-; BIPMTMSH = {HC(PPh2NSiMe3)2}-] with benzyl potassium/18-crown-6 ether (18C6) in THF afforded [Ln(BIPMTMS)2][K(18C6)(THF)2] [Ln = Dy, 2Dy; Y, 2Y]. AC magnetic measurements of 2Dy in zero DC field show temperature- and frequency-dependent SMM behaviour. Orbach relaxation dominates at high temperature, but at lower temperatures a second-order Raman process dominates. Complex 2Dy exhibits two thermally activated energy barriers (U eff) of 721 and 813 K, the largest U eff values for any monometallic dysprosium(iii) complex. Dilution experiments confirm the molecular origin of this phenomenon. Complex 2Dy has rich magnetic dynamics; field-cooled (FC)/zero-field cooled (ZFC) susceptibility measurements show a clear divergence at 16 K, meaning the magnetic observables are out-of-equilibrium below this temperature, however the maximum in ZFC, which conventionally defines the blocking temperature, T B, is found at 10 K. Magnetic hysteresis is also observed in 10% 2Dy@2Y at these temperatures. Ab initio calculations suggest the lowest three Kramers doublets of the ground 6H15/2 multiplet of 2Dy are essentially pure, well-isolated |±15/2, |±13/2 and |±11/2 states quantised along the C[double bond, length as m-dash]Dy[double bond, length as m-dash]C axis. Thermal relaxation occurs via the 4th and 5th doublets, verified experimentally for the first time, and calculated U eff values of 742 and 810 K compare very well to experimental magnetism and luminescence data. This work validates a design strategy towards realising high-temperature SMMs and produces unusual spin relaxation behaviour where the magnetic observables are out-of-equilibrium some 6 K above the formal blocking temperature.

Hydrogenation of Graphene by Reaction at High Pressure and High Temperature

The chemical reaction between hydrogen and purely sp(2)-bonded graphene to form graphene's purely sp(3)-bonded analogue, graphane, potentially allows the synthesis of a much wider variety of novel two-dimensional materials by opening a pathway to the application of conventional chemistry methods in graphene. Graphene is currently hydrogenated by exposure to atomic hydrogen in a vacuum, but these methods have not yielded a complete conversion of graphene to graphane, even with graphene exposed to hydrogen on both sides of the lattice. By heating graphene in molecular hydrogen under compression to modest high pressure in a diamond anvil cell (2.6-5.0 GPa), we are able to react graphene with hydrogen and propose a method whereby fully hydrogenated graphane may be synthesized for the first time.

Determination of the quasi-TE mode (in-plane) graphene linear absorption coefficient via integration with silicon-on-insulator racetrack cavity resonators

We examine the near-IR light-matter interaction for graphene integrated cavity ring resonators based on silicon-on-insulator (SOI) race-track waveguides. Fitting of the cavity resonances from quasi-TE mode transmission spectra reveal the real part of the effective refractive index for graphene, n(eff) = 2.23 ± 0.02 and linear absorption coefficient, α(gTE) = 0.11 ± 0.01dBμm(-1). The evanescent nature of the guided mode coupling to graphene at resonance depends strongly on the height of the graphene above the cavity, which places limits on the cavity length for optical sensing applications.