Bragg coherent diffraction imaging of single 20 nm Pt particles at the ID01-EBS beamline of ESRF

This work demonstrates three-dimensional Bragg coherent diffraction imaging of single 20 nm Pt particles at the ID01-EBS beamline of ESRF.

Electronic or catalytic properties can be modified at the nanoscale level. Engineering efficient and specific nanomaterials requires the ability to study their complex structure–property relationships. Here, Bragg coherent diffraction imaging was used to measure the three-dimensional shape and strain of platinum nanoparticles with a diameter smaller than 30 nm, i.e. significantly smaller than any previous study. This was made possible by the realization of the Extremely Brilliant Source of ESRF, The European Synchrotron. This work demonstrates the feasibility of imaging the complex structure of very small particles in three dimensions and paves the way towards the observation of realistic catalytic particles.

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors

We report a highly flexible strain sensor which exploits the piezoelectric properties of ultra-long gallium nitride (GaN) wires. Langmuir-Blodgett assembled wires are encapsulated in a dielectric material (parylene-C), which is sandwiched between two planar electrodes in a capacitor-like configuration. Through FEM simulations we show that encapsulating densely aligned conical wires in a properly designed dielectric layer can maximize the amplitude of the generated piezoelectric output potential. According to these considerations we designed and fabricated macroscopic flexible strain sensors (active area: 1.5 cm(2)). The sensor was actuated in three point configuration inducing curvature radii of less than 10 cm and has a typical force sensitivity of 30 mV N(-1).

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy

We report a systematic experimental and theoretical investigation of core-shell InGaN/GaN single wire light-emitting diodes (LEDs) using electron beam induced current (EBIC) microscopy. The wires were grown by catalyst-free MOVPE and processed into single wire LEDs using electron beam lithography on dispersed wires. The influence of the acceleration voltage and of the applied bias on the EBIC maps was investigated. We show that the EBIC maps provide information both on the minority carrier effects (i.e. on the local p-n junction collection efficiency) and on the majority carrier effects (i.e. the transport efficiency from the excited region toward the contacts). Because of a finite core and shell resistance a non-negligible current redistribution into the p-n junction takes place during the majority carrier transport. A theoretical model for transport in a core-shell wire is developed, allowing to explain the dependence of the EBIC profiles on the experimental parameters (the electron beam acceleration voltage and the bias applied on the device) and on the structural parameters of the wire (core and shell resistance, shunt resistance, etc). Comparison between simulated and experimental profiles provides valuable information concerning the structure inhomogeneities and gives insight into the wire electrical parameters.

Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 μm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.

Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam

We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200×70 nm2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and intensity. We demonstrate how it is possible to refine the line deformation map at the nanoscale, and follow its evolution as the line relaxes under the influence of the x-ray nanobeam. We find that the strained line flattens itself under irradiation but maintains the same linear strain (ε(zz) unchanged).

Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate

A detailed characterization of the coherent x-ray wavefront produced by a partially illuminated Fresnel zone plate is presented. We show, by numerical and experimental approaches, how the beam size and the focal depth are strongly influenced by the illumination conditions, while the phase of the focal spot remains constant. These results confirm that the partial illumination can be used for coherent diffraction experiments. Finally, we demonstrate the possibility of reconstructing the complex-valued illumination function by simple measurement of the far field intensity in the specific case of partial illumination.

Metal positioning on silicon surfaces using the etching of buried dislocation arrays

Large-area Si(001) nanopatterned surfaces obtained by etching dislocation line arrays have been used to drive the positioning of metallic islands. A method combining wafer bonding of (001) silicon on insulator layers and preferential chemical etching allows controlling the periodicity of square trench arrays in the 20-50 nm lateral periodicity range with an accuracy of less than 1 nm and a depth of about 4-5 nm. The interfacial area containing the dislocation line plane can be removed and a single crystal maintaining the morphological patterning can be obtained. It is shown that oxidized or deoxidized silicon nanopatterned surfaces can drive the positioning of Ni, Au and Ag islands for a 20 nm lateral periodicity and that a lateral long range order, directly transferred from the dislocation network, can be obtained in the Ni and Au cases.

The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates

High quality single-crystal Au(100) buffers have been grown on GaAs(100) or MgO(100) substrates via a thin bcc Fe(100) nucleation layer. Using RHEED, LEED and Auger spectroscopy the growth of Ni overlayers at room temperature was observed to follow an epitaxial layer-by-layer mode for 2 monolayers, after which islanding occured. Detailed analysis of the Auger signal reveals that atomic mixing appears within the first completed layer. Grazing incidence diffraction has been used to investigate the structure of 5–10 nm films. A mixture of (100) and (110) grains have been characterized; the latter orientation shows a large number of stacking faults along the [111] direction in agreement with the Au[001] direction.

Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy

A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature.

Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement

We report a luminescence study of the electronic properties of the 2D electron-hole liquid in crystalline Si quantum wells with SiO2 dielectric barriers. The Fermi-Dirac condensation of e-h pairs into a metallic liquid is strongly enhanced by spatial localization. We present experimental evidence for the formation of liquid nanodroplets, with size increasing with e-h pair density. The quantum confined regime is observed for well width below 15 nm. The data are analyzed in a confinement model that takes account of the band-gap renormalization by 2D many-body effects and the increase of the Coulomb interactions due to the dielectric mismatch between the Si well and the SiO2 barriers.

Localized destructive interference in X-ray specular reflectivity

Localized destructive interference can be obtained for specific values of the angle of incidence when studying semiconductor superlattices with X-ray reflectivity at fixed wavelength. Kinematical calculations show that the difference between the real parts of the refractive index of the layers must be small, and that the number of superlattice periods must be optimized to enhance the destructive interference. An experimental example, involving a CdTe/CdZnTe superlattice, and optical matrix simulations for SiGe/Si superlattices are presented to illustrate this effect. Finally, it is shown that such structures can be tailored to act as energy filters at fixed angles of incidence.