Jain A, Rojas-Sanchez JC, Cubukcu M, Peiro J, Le Breton JC, Prestat E, Vergnaud C, Louahadj L, Portemont C, Ducruet C, Baltz V, Barski A, Bayle-Guillemaud P, Vila L, Attané JP, Augendre E, Desfonds G, Gambarelli S, Jaffrès H, George JM, Jamet M. Crossover from spin accumulation into interface states to spin injection in the germanium conduction band.
Phys Rev Lett 2012;
109:106603. [PMID:
23005314 DOI:
10.1103/physrevlett.109.106603]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2012] [Indexed: 06/01/2023]
Abstract
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced to a value compatible with the spin diffusion model. More interestingly, the observation in this regime of inverse spin Hall effect in germanium generated by spin pumping and the modulation of the spin signal by a gate voltage clearly demonstrate spin accumulation in the germanium conduction band.
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