Identification of the nitrogen split interstitial (N-N)(N) in GaN.
PHYSICAL REVIEW LETTERS 2012;
109:206402. [PMID:
23215512 DOI:
10.1103/physrevlett.109.206402]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2012] [Indexed: 06/01/2023]
Abstract
Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated interstitial is unstable and transforms into a split interstitial configuration (N-N)(N). It is generated by particle irradiation with an introduction rate of a primary defect, pins the Fermi level at E(C)-1.0 eV for high fluences, and anneals out at 400 °C. The associated defect, the nitrogen vacancy, is observed by PAS only in the initial stage of irradiation.
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