Size-dependent redox behavior of iron observed by in-situ single nanoparticle spectro-microscopy on well-defined model systems

Understanding the chemistry of nanoparticles is crucial in many applications. Their synthesis in a controlled manner and their characterization at the single particle level is essential to gain deeper insight into chemical mechanisms. In this work, single nanoparticle spectro-microscopy with top-down nanofabrication is demonstrated to study individual iron nanoparticles of nine different lateral dimensions from 80 nm down to 6 nm. The particles are probed simultaneously, under same conditions, during in-situ redox reaction using X-ray photoemission electron microscopy elucidating the size effect during the early stage of oxidation, yielding time-dependent evolution of iron oxides and the mechanism for the inter-conversion of oxides in nanoparticles. Fabrication of well-defined system followed by visualization and investigation of singled-out particles eliminates the ambiguities emerging from dispersed nanoparticles and reveals a significant increase in the initial rate of oxidation with decreasing size, but the reactivity per active site basis and the intrinsic chemical properties in the particles remain the same in the scale of interest. This advance of nanopatterning together with spatially-resolved single nanoparticle X-ray absorption spectroscopy will guide future discourse in understanding the impact of confinement of metal nanoparticles and pave way to solve fundamental questions in material science, chemical physics, magnetism, nanomedicine and nanocatalysis.

High-resolution and large-area nanoparticle arrays using EUV interference lithography

Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and dimensions. However, they are either limited in resolution or have low throughput and therefore do not enable the large patterning area needed to obtain good signal-to-noise ratio in common analytical and characterization techniques. Extreme ultraviolet (EUV) lithography has the throughput and simplicity advantages of photolithography as well as high resolution due to its wavelength. Using EUV achromatic Talbot lithography, we have obtained 15 nm particle arrays with a periodicity of about 100 nm over an area of several square centimeters with high-throughput enabling the use of nanotechnology for fabrication of model systems to study large ensembles of well-defined identical nanoparticles with a density of 10(10) particles cm(-2).

Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

Directly Bonded Copper Metallization of AℓN Substrates for Power Hybrids

Aluminum nitride (AℓN) ceramic is emerging as an attractive substrate material for high performance heat sinking in hybrid circuits be -cause of its high thermal conductivity. We report on the application of the direct bonding technique for Cu on AℓN substrates. For successful bonds, the surface of the AℓN has to be oxidized. Oxidation rates are reported and the oxide morphology is analyzed. The peel strength of the Cu sheet depends on oxide thickness, growth method and Cu-type used. Under optimum conditions the peel strength exceeds 50 N/cm. A detailed analysis using optical microscopy as well as SEM, STEM, EDX, and electron diffraction techniques of the AℓN/Aℓ2O3/Cu interface is carried out.

3D visualization of mold filling stages in thermal nanoimprint by white light interferometry and atomic force microscopy

A method for continuous 3D visualization of the mold filling at a microscopic level during a thermoplastic nanoimprint process was developed. It is based on superposition of micrographs of a series of different stages of imprint. It was applied to two common 3D microscopies with different resolution limitations. Due to advanced image processing, the animated movie sequence, available as supplementary multimedia information in the online version of this journal, gives an unprecedented insight into the complex polymer flow and shows how voids are forming and vanishing during the imprint process around micropillars. The method has advantages over current real-time methods and can be used as an analytical tool for optimization of processes and improvement of stamp design down to the sub-10 nm nanometer range.

Chemical Nanopatterns via Nanoimprint Lithography for Simultaneous Control over Azimuthal and Polar Alignment of Liquid Crystals

Chemical nanopatterns down to 50 nm in feature size have been fabricated via nanoimprint lithography and used to simultaneously control azimuthal and polar orientation of liquid crystals (LCs). The polar orientation depends on the ratio of the homeotropic/planar surface potential areas, while the LC azimuthally orients along the direction of the silane patterns.

Electro-osmotic streaming on application of traveling-wave electric fields

We describe ac electro-osmotic flow of an aqueous electrolyte on application of a traveling-wave electric field. Depending on the frequency of the applied traveling wave, the interaction of the electric double layer charge and the tangential electric field leads to fluid flow in the direction of the traveling wave. We have derived two theoretical models that describe this flow as a function of the amplitude of the applied electric potential, the signal frequency, and the material properties of the system. The first is based on a capacitative model and is limited to frequencies much lower than the double layer relaxation frequency. The second is an analytical solution of the electrokinetic equations and is also valid at higher frequencies. We provide experimental evidence that streaming takes place on application of a traveling wave of potential by tracing the movements of fluorescent latex beads over a spiral electrode structure. Streaming takes place at applied potentials low enough for the method to be easily integrated into lab-on-a-chip devices.

Site-directed molecular assembly on templates structured with electron-beam lithography

We describe a simple method for patterning biomolecular films on surfaces with high resolution. A conventional polymeric resist is structured by electron-beam lithography. The exposed and developed patterns are then used for the directed self-assembly (SA) of a first molecule from solution. Removal of the remaining resist allows the SA of a second species. We illustrate the potential of the approach by assembling on gold (Au) substrates two alkanethiols of contrasting terminal functionality. The patterns have dimensions from the micrometer range down to 40 nm and an edge resolution of 3.5 nm.

Optimized staircase profiles for diffractive optical devices made from absorbing materials

We report on the optimization of staircase grating profiles for the case of absorbing grating materials. Using a simple numerical algorithm, we determined the grating parameters, maximizing the first-order diffraction efficiency for different numbers of staircase steps. The results show that there is a significant difference between the staircase profiles for nonnegligible and negligible absorption. The obtained solutions are of importance for diffractive optics in the soft-x-ray and extreme-ultraviolet ranges.

Rotating shutters: a mechanical way of flattening gaussian beam profiles in time average

A mechanical method of flattening the Gaussian intensity distribution of laser beams in time average is presented. Specially shaped rotating shutters are the key feature of this method, which has been applied to achieve homogeneous submicrometer patterning of macroscopically large samples by laser interference exposure. This method represents a simple yet useful alternative to applying beam broadening or degaussing plates (apodizing filters).

Nanotechnology and Model Catalysis: The Use of Photolithography for Creating Active Surfaces

New and very stable model catalysts have been developed. Two types of samples on oxidized 4-inch wafers were produced using processes that are generally employed in semiconductor device technology. A single wafer exhibits 109 to 1010 active sites on an otherwise flat silicon oxide surface. Sputter etching of a number of bilayers (Pd/SiO2), stacked on an oxidized Si wafer surface resulted in billions of isolated towers, consisting of disks of active metal layers, separated by inert substrate material. A second system was produced by etching pits into a heavily oxidized 4-inch Si wafer. Active material was deposited into the pits by e-beam evaporation or spin-coating of precursor solutions. The topography and chemical composition, and the changes induced by the reaction conditions applied, including stability and chemical behavior of the nanostructured systems, were investigated by means of AFM, SEM, temperature-programmed methods and XPS.

Finite element calculations and fabrication of cantilever sensors for nanoscale detection

Finite element analysis (FEA) is used to study the effect of geometric variations on the properties of rectangular cantilevers and U-shaped Joule-heated cantilevers. Simulations of locally thinned cantilevers as well as of cantilevers modified by the implementing of a hole or a side cut are compared with fabricated cantilevers, which are tuned by focused ion beam (FIB) milling. By locally thinning the cantilevers, the resonance frequency and the spring constant are reduced. For a hole, the internal stress is increased while for a side cut, the lateral spring constant is decreased. Good agreement between the measured and the simulated resonance frequencies is observed. Simulations of the current density and the temperature distributions attained during the passage of current through a doped silicon layer are performed to optimize the design of Joule-heated cantilevers (U-shaped) for thermal gravimetric applications. A very uniform temperature distribution over a region near the apex can be realized by slitting the U-shaped cantilever. In such a way, the heating power can be minimized by effecting only a small variation in the geometry of a U-shaped cantilever. A simple fabrication process for the fabrication of Joule-heated cantilevers is presented, which consists mainly of a uniform conductive p-doped layer.