Vélez S, Ciudad D, Island J, Buscema M, Txoperena O, Parui S, Steele GA, Casanova F, van der Zant HSJ, Castellanos-Gomez A, Hueso LE. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.
Nanoscale 2015;
7:15442-15449. [PMID:
26335856 DOI:
10.1039/c5nr04083c]
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Abstract
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ∼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.
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