Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.
Sci Rep 2014;
4:4371. [PMID:
24621830 PMCID:
PMC3952149 DOI:
10.1038/srep04371]
[Citation(s) in RCA: 22] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2014] [Accepted: 02/26/2014] [Indexed: 11/22/2022] Open
Abstract
We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.
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