Built-in tensile strain dependence on the lateral size of monolayer MoS2 synthesized by liquid precursor chemical vapor deposition

Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.

Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition

The use of metal nanoparticles is an established paradigm for the synthesis of semiconducting one-dimensional nanostructures. In this work we study their effect on the synthesis of two-dimensional semiconducting materials, by using gold nanoparticles for chemical vapor deposition growth of two-dimensional molybdenum disulfide (MoS₂). In comparison with the standard method, the employment of gold nanoparticles allows us to obtain large monolayer MoS₂ flakes, up to 20 μm in lateral size, even if they are affected by the localized overgrowth of MoS₂ bilayer and trilayer islands. Important modifications of the optical and electronic properties of MoS₂ triangular domains are reported, where the photoluminescence intensity of the A exciton is strongly quenched and a shift to a positive threshold voltage in back-gated field effect transistors is observed. These results indicate that the use of gold nanoparticles influences the flake growth and properties, indicating a method for possible localized synthesis of two-dimensional materials, improving the lateral size of monolayers and modifying their properties.

Influence of organic promoter gradient on the MoS2 growth dynamics

Chemical vapor deposition has been demonstrated to be the most efficient, versatile and reliable technique for the synthesis of monolayers of transition metal dichalcogenides. The use of organic promoters during the growth process was a turning point in order to increase the monolayer lateral size or to obtain complete coverage of the growth substrate. In this work we clarify the influence of the promoter gradient on the growth dynamics of MoS₂. In particular, we place a sacrificial substrate covered with a promoter (a low sublimation-temperature perylene-based compound) downstream with respect to the growth substrate in order to maximize its gradient on the growth substrate through upstream diffusion. We demonstrate that the morphology and the number of layers of MoS₂ are drastically affected by the distance of the growth substrate from the promoter sacrificial substrate. The farthermost area from the promoter substrate presents micrometric MoS₂ triangular monolayers and large low hierarchy dendritic multi-layer structures. On the contrary the closest area reveals an almost continuous polycrystalline MoS₂ monolayer, with bilayer terraces, with a lateral dimension up to hundreds of micrometers.

Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures

One of the challenges in the development of germanium nanowires (Ge NWs) is to increase their length beyond the 10 μm limit without enlarging the NW diameter, i.e. minimizing the tapering. Here we report how it is possible to overcome this hurdle by using isobutyl germane (iBuGe) as a metal organic precursor during MOCVD growth, instead of the commonly used germane. We have grown and characterized by transmission electron microscopy, scanning electron microscopy and Raman various samples and we have analyzed the effect of growth time, precursor flux and growth temperature on the NW length. The use of iBuGe coupled to optimized growth conditions permitted to obtain Ge NWs with lengths up to 30 μm with minimal tapering. To explain why a new precursor has this impact on the morphology of the NWs we consider two possible causes: (i) the role of carbon radicals produced by isobutyl decomposition and (ii) the reduced growth rate of Ge on the sidewalls. On the basis of Raman characterization and temperature-dependence of tapering, we conclude that the reduced tapering is probably due to lower growth rates on the sidewalls.

All-Optical Fiber Hanbury Brown &Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot

New optical fiber based spectroscopic tools open the possibility to develop more robust and efficient characterization experiments. Spectral filtering and light reflection have been used to produce compact and versatile fiber based optical cavities and sensors. Moreover, these technologies would be also suitable to study N-photon correlations, where high collection efficiency and frequency tunability is desirable. We demonstrated single photon emission of a single quantum dot emitting at 1300 nm, using a Fiber Bragg Grating for wavelength filtering and InGaAs Avalanche Photodiodes operated in Geiger mode for single photon detection. As we do not observe any significant fine structure splitting for the neutral exciton transition within our spectral resolution (46 μeV), metamorphic QD single photon emission studied with our all-fiber Hanbury Brown & Twiss interferometer could lead to a more efficient analysis of entangled photon sources at telecom wavelength. This all-optical fiber scheme opens the door to new first and second order interferometers to study photon indistinguishability, entangled photon and photon cross correlation in the more interesting telecom wavelengths.

Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating

Photoluminescence and time resolved photoluminescence from single metamorphic InAs/GaAs quantum dots (QDs) emitting at 1.3 μm have been measured by means of a novel fibre-based characterization set-up. We demonstrate that the use of a wavelength tunable fibre Bragg grating filter increases the light collection efficiency by more than one order of magnitude as compared to a conventional grating monochromator. We identified single charged exciton and neutral biexciton transitions in the framework of a random population model. The QD recombination dynamics under pulsed excitation can be understood under the weak quantum confinement potential limit and the interaction between carriers at the wetting layer and QD states.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths

We present research carried out on molecular beam epitaxy grown InAs/(In)GaAs quantum dot structures for single-photon operation at long wavelengths. The optical and morphological properties of the structures are studied as functions of quantum dot growth parameters and of the InGaAs upper confining layer thickness and composition. We show that low growth rate, high growth temperature and reduced quantum dot coverage are very effective in reducing the quantum dot density but, owing to In desorption effects and quantum dot size reduction, this result is not always concomitant with the achievement of long wavelength emission. To this aim, we show that the use of InGaAs upper confining layers allows the redshift of quantum dot emission energy without affecting their density. Both the thickness and composition of the InGaAs layer have to be carefully chosen to provide a complete coverage of quantum dots and not to exceed the critical thickness for plastic relaxation. Our results led to the preparation of quantum dot structures with densities in the low 10(9) cm(-2) range, 1.33 microm emission at 10 K and full widths at half maximum of 22 meV.

[Adrenal function after induction of cardiac surgery patients with an etomidate bolus: a retrospective study]

OBJECTIVE

A single bolus dose of etomidate decreases cortisol synthesis by inhibiting the 11-beta hydroxylase, a mitochondrial enzyme in the final step of cortisol synthesis. In our institution, all the patients undergoing cardiac surgery receive etomidate at anesthesia induction. The purpose of this study was to assess the incidence of adrenocortical dysfunction after a single dose of etomidate in selected patients undergoing major cardiac surgery and requiring high-dose norepinephrine postoperatively.

STUDY DESIGN

Retrospective descriptive study in the surgical ICU of a university hospital.

PATIENTS AND METHODS

Sixty-three patients presented acute circulatory failure requiring norepinephrine (>0,2 microg/kg/min) during the 48 hours following cardiac surgery. Absolute adrenal insufficiency was defined as a basal cortisol below 414 nmo/l (15 microg/dl) and relative adrenal insufficiency as a basal plasma cortisol between 414 nmo/l (15 microg/dl) and 938 nmo/l (34 microg/dl) with an incremental response after 250 microg of synthetic corticotropin (measured at 60 minutes) below 250 nmol/l (9 microg/dl).

RESULTS

Fourteen patients (22%) had normal corticotropin test results, 10 (16%) had absolute and 39 (62%) relative adrenal insufficiency. All patients received a low-dose steroid substitution after the corticotropin test. Substituted patients had similar clinical outcomes compared to patients with normal adrenal function.

CONCLUSION

A high incidence of relative adrenal failure was observed in selected cardiac surgery patients with acute postoperative circulatory failure.

The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

We report on a photoluminescence and photoreflectance study of metamorphic InAs/InGaAs quantum dot strain-engineered structures with and without additional InAlAs barriers intended to limit the carrier escape from the embedded quantum dots. From: (1) the substantial correspondence of the activation energies for thermal quenching of photoluminescence and the differences between wetting layer and quantum dot transition energies and (2) the unique capability of photoreflectance of assessing the confined nature of the escape states, we confidently identify the wetting layer states as the final ones of the process of carrier thermal escape from quantum dots, which is responsible for the photoluminescence quenching. Consistently, by studying structures with additional InAlAs barriers, we show that a significant reduction of the photoluminescence quenching can be obtained by the increase of the energy separation between wetting layers and quantum dot states that results from the insertion of enhanced barriers. These results provide useful indications on the light emission quenching in metamorphic quantum dot strain-engineered structures; such indications allow us to obtain light emission at room temperature in the 1.55 microm range and beyond by quantum dot nanostructures grown on GaAs substrates.

[Tako-tsubo cardiomyopathy: a rare and badly known clinical entity]

Tako-tsubo cardiomyopathy or "transient left ventricular (LV) apical ballooning" clinically presents like acute myocardial infarction without angiographic stenosis on coronary angiogram and a transient (reversible) LV apical ballooning. We discuss here about a 56-year-old woman complains of first constrictive chest pain with ST elevation in leads V2-V6 and minimal enzymatic release. Coronary angiogram demonstrates vessels without stenosis and the left ventriculogram an extensive LV apical wall motion abnormalities. LV dysfunction will only be transient since 24 hours after admission echographic images demonstrate quite complete recovery of LV systolic function. The pain disappears 12 hours after admission and the creatine kinase level normalize after 48 hours.