A Brief Review for Common Doppler Ultrasound Flow Phantoms

In this review, the flow phantoms and the wall-less flow phantoms with recognized acoustic features (attenuation and speed of sound), interior properties, and dimensions of tissue were prepared, calibrated, and characterized by Doppler ultrasound (US) scanning which demands tissue-mimicking materials (TMMs). TMM phantoms are commercially available and readymade for medical US applications. Furthermore, the commercial TMM phantoms are proper for US purpose or estimation of diagnostic imaging techniques according to the chemical materials used for its preparation.

The sonochemical synthesis of vertically aligned ZnO nanorods and their UV photodetection properties: Effect of ZnO buffer layer

Vertically aligned Zinc oxide nanorods (ZnO NRs) were successfully synthesized in this study using the sonochemical method to improve the intrinsic properties of UV photodetector (PD). Three different thin films: Ti/Zn, Ti/ZnO, and Ti/ZnO/Zn, with the thicknesses of 10 nm/55 nm, 10 nm/85 nm, and 10 nm/85 nm/55 nm respectively, were deposited on glass substrates using the RF-sputtering technique. The synthesized ZnO NRs were investigated using XRD, FESEM and Raman spectroscopy to determine the effect of Zn and ZnO as seed layers, and ZnO as a buffer layer on the surface morphology, crystal structure, optical properties of ZnO NRs. The ZnO NRs grown on Zn/Ti, ZnO/Ti, and Zn/ZnO/Ti are characterized by hexagonal crystal structure with preferential growth in the c-axis direction. The ZnO NRs grown on Zn/ZnO/Ti displayed the highest density, uniform size distribution, vertically aligned rods and aspect ratio. The UV device fabricated from the ZnO NRs grown on Zn /ZnO/Ti also showed the highest photocurrent (360 µA) and responsivity of (878 mA/W). ZnO NRs grown on Zn/ZnO/Ti were also observed to be highly stable and exhibited a relatively rapid response and recovery times for different time intervals when exposed to the UV light of 365 nm wavelength. Thus, the inclusion of the ZnO as a buffer layer (Zn as a seed layer/ZnO as buffer layer/Ti as a buffer layer) improve the properties of the ZnO NRs. In addition, the current gain of ZnO NRs grown on Zn (55 nm)/ZnO (85 nm)/Ti (10 nm) - based ultraviolet (UV) photodetector (PD) is about two times higher than that of conventional Zn (55 nm)/ZnO (85 nm)/Ti (10 nm) thin-films UV PD, which is due to the higher surface-to-volume ratio of ZnO nanorods (NRs) compared with their thin films. This study confirms the possibility of sonochemically fabricating vertically aligned ZnO nanorods as well as its applicability as a viable UV photodetector.

Low-temperature solution-processed flexible solar cells based on (In,Ga)N nanocubes

Indium gallium nitride nanocubes were syntheized via a low-temperature chemical route. Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the successful fabrication of (In,Ga)N with various indium mole fractions. The bandgap of the material was tunded as a function of the indium content. The fabricated nanocubes showed a deep level photoluminescence emission at 734 nm as well as in the visible region at 435-520 nm. The Hall effect measurements showed the hole concentration to constantly increase from 6.2 × 10(16) to 2.3 × 10(18) cm(-3), while the hole mobility to decrease from 0.92 to 0.1 cm(2) /(V s) as the doping ratio increases from 0.005 to 0.025 cm(-3). The solar cell device made of nanocubes film containing 0.4 indium on flexible substrates showed a short-circuit current density of 12.47 mA/cm(2) and an open-circuit voltage (Voc) of 0.48 V with 54% fill factor. The relationship between Voc and indium content in the fabricated films was also investigated.