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Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy. Nanotechnology 2021; 32:155602. [PMID: 33429384 DOI: 10.1088/1361-6528/abda75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well-established material in microelectronics, the controlled growth of hexagonal wurtzite (WZ) GaAs has thus far not been achieved successfully. Specifically, the prospect of growing defect-free and gold catalyst-free wurtzite GaAs would pave the way towards integration on silicon substrate and new device applications. In this article, we present a method to select and maintain the WZ crystal phase in self-assisted NWs by molecular beam epitaxy. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the ZB or WZ phase is the V/III flux ratio. Using an analytical growth model, we show that the V/III flux ratio can be finely tuned by changing the As flux, thus driving the system toward a stationary regime where the wetting angle of the Ga droplet can be maintained in the range of values allowing the formation of pure WZ phase. The analysis of the in situ reflection high energy electron diffraction evolution, combined with high-resolution scanning transmission electron microscopy (TEM), dark field TEM, and photoluminescence all confirm the control of an extended pure WZ segment, more than a micrometer long, obtained by molecular beam epitaxy growth of self- assisted GaAs NWs with a V/III flux ratio of 4.0. This successful controlled growth of WZ GaAs suggests potential benefits for electronics and opto-electronics applications.
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Affiliation(s)
- T Dursap
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - M Vettori
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - C Botella
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - P Regreny
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Blanchard
- Université de Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne, France
| | - M Gendry
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Chauvin
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, INSA de Lyon, 7 Avenue Jean Capelle F-69621, Villeurbanne Cedex, France
| | - M Bugnet
- Université de Lyon, INSA de Lyon, Université Claude Bernard Lyon 1, MATEIS, UMR 5510 CNRS, Avenue Jean Capelle, F-69621 Villeurbanne, France
| | - A Danescu
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully cedex, France
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Jaffal A, Regreny P, Patriarche G, Chauvin N, Gendry M. Density-controlled growth of vertical InP nanowires on Si(111) substrates. Nanotechnology 2020; 31:354003. [PMID: 32428880 DOI: 10.1088/1361-6528/ab9475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can be tuned with values in the range of 18 µm-2 to <0.1 µm-2 by the suitable choice of the In/Au catalyst beam equivalent pressure (BEP) ratio, by the phosphorous BEP and the growth temperature. The same degree of control is transferred to InAs/InP quantum dot-nanowires, taking advantage of the ultra-low density to study by micro-photoluminescence the optical properties of a single quantum dot-nanowires emitting in the telecom band monolithically grown on silicon. Optical spectroscopy at cryogenic temperature successfully confirmed the relevance of our method to excite single InAs quantum dots on the as-grown sample, which opens the path for large-scale applications based on single quantum dot-nanowire devices integrated on silicon. .
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Affiliation(s)
- A Jaffal
- Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, INSA de Lyon, Université de Lyon, 7 avenue Jean Capelle, 69621, Villeurbanne cedex, France. Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, Ecole Centrale de Lyon, Université de Lyon, 36 avenue Guy de Collongue, 69134, Ecully cedex, France
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Dursap T, Vettori M, Danescu A, Botella C, Regreny P, Patriarche G, Gendry M, Penuelas J. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram. Nanoscale Adv 2020; 2:2127-2134. [PMID: 36132505 PMCID: PMC9418245 DOI: 10.1039/d0na00273a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2019] [Accepted: 04/09/2020] [Indexed: 06/12/2023]
Abstract
It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the wurtzite (WZ) or zinc-blende (ZB) structure in self-catalyzed GaAs NWs grown by molecular beam epitaxy, using in situ reflection high energy electron diffraction (RHEED) diagram analysis. Since the diffraction patterns of the ZB and WZ structures differ according to the azimuth [11̄0], it is possible to follow the evolution of the intensity of specific ZB and WZ diffraction spots during NW growth as a function of the growth parameters such as the Ga flux. By analyzing the evolution of the WZ and ZB spot intensities during NW growth with specific changes of the Ga flux, it is then possible to control the crystal structure of the NWs. ZB GaAs NWs with a controlled WZ segment have thus been realized. Using a semi-empirical model for the NW growth and our in situ RHEED measurements, the critical wetting angle of the Ga catalyst droplet for the structural transition is deduced.
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Affiliation(s)
- T Dursap
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - M Vettori
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - A Danescu
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - C Botella
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - P Regreny
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - G Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies 91120 Palaiseau France
| | - M Gendry
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon-INL, UMR 5270 CNRS, Université de Lyon, École Centrale de Lyon 36 avenue Guy de Collongue F-69134 Ecully cedex France
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Vettori M, Piazza V, Cattoni A, Scaccabarozzi A, Patriarche G, Regreny P, Chauvin N, Botella C, Grenet G, Penuelas J, Fave A, Tchernycheva M, Gendry M. Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon. Nanotechnology 2019; 30:084005. [PMID: 30524074 DOI: 10.1088/1361-6528/aaf3fe] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With a band gap value of 1.7 eV, Al0.2Ga0.8As is one of the ideal III-V alloys for the development of nanowire-based Tandem Solar Cells on silicon. Nevertheless, growing self-catalysed AlGaAs nanowires on silicon by solid-source molecular beam epitaxy is a very difficult task due to the oxidation of Al adatoms by the SiO2 layer present on the surface. Here we propose a nanowire structure including a p.i.n radial junction inside an Al0.2Ga0.8As shell grown on a p-GaAs core. The crystalline structure of such self-catalysed nanowires grown on an epi-ready Si(111) substrate (with a thin native SiO2 layer) was investigated by transmission electronic microscopy and photoluminescence. I(V) measurements performed on single nanowires have shown a diode-like behaviour corresponding to the radial p.i.n junction inside the Al0.2Ga0.8As shell. Moreover, a current generation under the electron beam was evidenced over the entire radial junction along the nanowires by means of electron beam induced current (EBIC) microscopy. The same structure was reproduced on patterned substrates with a SiO2 mask, producing an ordered hexagonal array. High and uniform yields from 83% to 87% of vertical nanowires were obtained on 0.9 × 0.9 cm2 patterned areas. EBIC mapping performed on these nanowires confirmed the good electrical properties of the radial junction within the nanowires.
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Affiliation(s)
- M Vettori
- INL, UMR 5270 CNRS, University of Lyon, Ecole Centrale de Lyon, F-69134, Ecully, France. INL, UMR 5270 CNRS, University of Lyon, INSA de Lyon, F-69621, Villeurbanne, France
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Hamza Taha MK, Boisron O, Canut B, Melinon P, Penuelas J, Gendry M, Masenelli B. Control of the compensating defects in Al-doped and Ga-doped ZnO nanocrystals for MIR plasmonics. RSC Adv 2017. [DOI: 10.1039/c7ra03697c] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The MIR plasmon of degenerate ZnO nanocrystals is tuned by the direct control of oxygen during their synthesis.
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Affiliation(s)
| | - O. Boisron
- Univ. Lyon
- Univ. Lyon 1
- CNRS
- ILM-UMR5306
- Villeurbanne
| | | | - P. Melinon
- Univ. Lyon
- Univ. Lyon 1
- CNRS
- ILM-UMR5306
- Villeurbanne
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6
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Guan X, Becdelievre J, Benali A, Botella C, Grenet G, Regreny P, Chauvin N, Blanchard NP, Jaurand X, Saint-Girons G, Bachelet R, Gendry M, Penuelas J. GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Nanoscale 2016; 8:15637-15644. [PMID: 27513669 DOI: 10.1039/c6nr04817j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping-decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped-decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.
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Affiliation(s)
- X Guan
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - J Becdelievre
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - A Benali
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - C Botella
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - G Grenet
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - P Regreny
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - N Chauvin
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, INSA de Lyon, 7 avenue Jean Capelle, F-69621 Villeurbanne, France.
| | - N P Blanchard
- Institut Lumière Matière (ILM), UMR5306 Université Lyon 1-CNRS Université de Lyon, 69622 Villeurbanne cedex, France
| | - X Jaurand
- Centre Technologique des Microstructures, Université Claude Bernard Lyon1, 5 rue Raphael Dubois-Bâtiment Darwin B, F-69622, Villeurbanne Cedex, France
| | - G Saint-Girons
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - R Bachelet
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - M Gendry
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
| | - J Penuelas
- Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France
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Guan X, Becdelievre J, Meunier B, Benali A, Saint-Girons G, Bachelet R, Regreny P, Botella C, Grenet G, Blanchard NP, Jaurand X, Silly MG, Sirotti F, Chauvin N, Gendry M, Penuelas J. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy. Nano Lett 2016; 16:2393-2399. [PMID: 27008537 DOI: 10.1021/acs.nanolett.5b05182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.
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Affiliation(s)
- X Guan
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - J Becdelievre
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - B Meunier
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - A Benali
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - G Saint-Girons
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - R Bachelet
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - P Regreny
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - C Botella
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - G Grenet
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - N P Blanchard
- Institut Lumière Matière (ILM), UMR5306 Université Lyon 1-CNRS Université de Lyon , 69622 Villeurbanne Cedex, France
| | - X Jaurand
- Centre Technologique des Microstructures, Université Claude Bernard Lyon 1 , 5 rue Raphael Dubois-Bâtiment Darwin B, F-69622, Villeurbanne Cedex, France
| | - M G Silly
- Synchrotron SOLEIL (TEMPO Beamline), l'Orme des Merisiers, Saint-Aubin, 91192 Gif-sur-Yvette, France
| | - F Sirotti
- Synchrotron SOLEIL (TEMPO Beamline), l'Orme des Merisiers, Saint-Aubin, 91192 Gif-sur-Yvette, France
| | - N Chauvin
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, INSA-Lyon , 7 avenue Jean Capelle, 69621 Villeurbanne, France
| | - M Gendry
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - J Penuelas
- Institut des Nanotechnologies de Lyon, Université de Lyon, UMR 5270-CNRS, Ecole Centrale de Lyon , 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France
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Hadj Alouane MH, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C. Excitonic properties of wurtzite InP nanowires grown on silicon substrate. Nanotechnology 2013; 24:035704. [PMID: 23262659 DOI: 10.1088/0957-4484/24/3/035704] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.
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Affiliation(s)
- M H Hadj Alouane
- Institut des Nanotechnologies de Lyon, (INL)-UMR5270-CNRS, Université de Lyon, INSA-Lyon, Villeurbanne, France.
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9
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Alouane MHH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate. Nanotechnology 2011; 22:405702. [PMID: 21911925 DOI: 10.1088/0957-4484/22/40/405702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.
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Affiliation(s)
- M H Hadj Alouane
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon, INSA-Lyon, Villeurbanne, France
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Alouane MHH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Gendry M. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. J Nanosci Nanotechnol 2011; 11:9251-9255. [PMID: 22400332 DOI: 10.1166/jnn.2011.4298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases from 10(11) cm(-2) to 5 x 10(14) cm(-2) which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.
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Affiliation(s)
- M H Hadj Alouane
- Laboratoire de Micro-Optoélectronique et Nanostructures, Université de Monastir, Faculté des Sciences, Université de Monastir, 5019, Tunisia
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Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates. J Nanosci Nanotechnol 2011; 11:9153-9159. [PMID: 22400316 DOI: 10.1166/jnn.2011.4282] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.
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Affiliation(s)
- C Bru-Chevallier
- Université de Lyon, INL CNRS UMR-5270, INSA-Lyon, F-69621 Villeurbanne Cedex, France
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Baira M, Ajjel R, Maaref H, Salem B, Brémond G, Gendry M, Marty O. Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001). Materials Science and Engineering: C 2006. [DOI: 10.1016/j.msec.2005.10.003] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Chauvin N, Salem B, Bru-Chevallier C, Benyattou T, Guillot G, Bremond G, Monat C, Rojo-Romeo P, Gendry M. Micro-photoluminescence study of single self-organized InAs/InP quantum sticks. Materials Science and Engineering: C 2005. [DOI: 10.1016/j.msec.2005.06.023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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14
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Proietti MG, Coraux J, Renevier H, Favre-Nicolin V, Monat C, Gendry M, Daudin B. Structural properties of semiconductor nanostructures determined via X-ray anomalous diffraction (DAFS) and absorption (EXAFS). Acta Crystallogr A 2005. [DOI: 10.1107/s0108767305099228] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
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Létoublon A, Favre-Nicolin V, Renevier H, Proietti MG, Monat C, Gendry M, Marty O, Priester C. Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence x-ray anomalous diffraction. Phys Rev Lett 2004; 92:186101. [PMID: 15169510 DOI: 10.1103/physrevlett.92.186101] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2003] [Indexed: 05/24/2023]
Abstract
We have used x-ray anomalous diffraction to recover the model-independent Fourier transform (x-ray structure factor) of InAs quantum sticklike islands embedded in InP. The average height of the quantum sticks, as deduced from the width of the structure factor profile, is 2.54 nm. The InAs out-of-plane deformation, relative to InP, is 6.1%. Diffraction anomalous fine structure provides evidence of pure InAs quantum sticks. Finite difference method calculations reproduce well the diffraction data, and give the strain along the growth direction. The chemical mixing at interfaces is also analyzed.
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Affiliation(s)
- A Létoublon
- Commissariat à l'Energie Atomique, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NRS, 17 rue des martyrs, 38054 Grenoble Cedex 9, France
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Bergignat E, Gendry M, Hollinger G, Grenet G. X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures. Phys Rev B Condens Matter 1994; 49:13542-13553. [PMID: 10010290 DOI: 10.1103/physrevb.49.13542] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hollinger G, Skheyta-Kabbani R, Gendry M. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers. Phys Rev B Condens Matter 1994; 49:11159-11167. [PMID: 10009965 DOI: 10.1103/physrevb.49.11159] [Citation(s) in RCA: 70] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Granier W, Gendry M, El Mansouri A, Vilminot S, Cot L. Conductivit� Anionique des Phases Isol�es dans les Syst�mes PbF2?SnF4 et PbF2?GeF4. Z Anorg Allg Chem 1983. [DOI: 10.1002/zaac.19835061107] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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