Single Nanocrystal Spectroscopy of Shortwave Infrared Emitters

Short-wave infrared (SWIR) emitters are at the center of ground-breaking applications in biomedical imaging, next-generation optoelectronic devices, and optical communications. Colloidal nanocrystals based on indium arsenide are some of the most promising SWIR emitters to date. However, the lack of single-particle spectroscopic methods accessible in the SWIR has prevented advances in both nanocrystal synthesis and fundamental characterization of emitters. Here, we demonstrate an implementation of a solution photon correlation Fourier spectroscopy (s-PCFS) experiment utilizing the SWIR sensitivity and time resolution of superconducting nanowire single-photon detectors to extract single-particle emission linewidths from colloidal indium arsenide/cadmium selenide (InAs/CdSe) core/shell nanocrystals emissive from 1.2 to 1.6 μm. We show that the average single InAs/CdSe nanocrystal fluorescence linewidth is, remarkably, as narrow as 52 meV, similar to what has been observed in some of the most narrowband nanostructured emitters in the visible region. Additionally, the single nanocrystal fluorescence linewidth increases with increasing shell thickness, suggesting exciton-phonon coupling as the dominant emission line-broadening mechanism in this system. The development of the SWIR s-PCFS technique has enabled measurements of spectral linewidths of colloidal SWIR-emissive NCs in solution and provides a platform to study the single NC spectral characteristics of SWIR emitters.

Low-noise RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillators: physics and operation

We demonstrate a 10-GHz RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillator (SCOW-COEO) system operating with low phase-noise (<-115 dBc/Hz at 1 kHz offset) and large sidemode suppression (>70 dB measurement-limited). The optical pulses generated by the SCOW-COEO exhibit 26.8-ps pulse width (post compression) with a corresponding spectral bandwidth of 0.25 nm (1.8X transform-limited). We also investigate the mechanisms that limit the performance of the COEO. Our measurements indicate that degradation in the quality factor (Q) of the optical cavity significantly impacts COEO phase-noise through increases in the optical amplifier relative intensity noise (RIN).

Photonic ADC: overcoming the bottleneck of electronic jitter

Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target of analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems. Aperture jitter has been a major bottleneck on the way towards higher speeds and better accuracy. Photonic ADCs, which perform sampling using ultra-stable optical pulse trains generated by mode-locked lasers, have been investigated for many years as a promising approach to overcome the jitter problem and bring ADC performance to new levels. This work demonstrates that the photonic approach can deliver on its promise by digitizing a 41 GHz signal with 7.0 effective bits using a photonic ADC built from discrete components. This accuracy corresponds to a timing jitter of 15 fs - a 4-5 times improvement over the performance of the best electronic ADCs which exist today. On the way towards an integrated photonic ADC, a silicon photonic chip with core photonic components was fabricated and used to digitize a 10 GHz signal with 3.5 effective bits. In these experiments, two wavelength channels were implemented, providing the overall sampling rate of 2.1 GSa/s. To show that photonic ADCs with larger channel counts are possible, a dual 20-channel silicon filter bank has been demonstrated.

Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response

SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.

CMOS-compatible dual-output silicon modulator for analog signal processing

A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators

We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.

All silicon infrared photodiodes: photo response and effects of processing temperature

CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 degrees C. 0.25-mm-long diodes annealed to 300 degrees C have a response to 1539 nm radiation of 0.1 A W-(-1) at a reverse bias of 5 V and 1.2 A W(-1) at 20 V. 3-mm-long diodes processed to 475 degrees C exhibited two states, L1 and L2, with photo responses of 0.3 +/-0.1 A W(-1) at 5 V and 0.7 +/-0.2 A W(-1) at 20 V for the L1 state and 0.5 +/-0.2 A W(-1) at 5 V and 4 to 20 A W(-1)-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %.

Timing jitter eater for optical pulse trains

Using a single phase modulator and dispersive fiber, we demonstrate a 12-dB reduction in the phase noise of a train of 6.5-ps pulses at a repetition rate of 10 GHz. A prechirp fiber is shown to improve performance.

Observation of quantum-limited timing jitter in an active, harmonically mode-locked fiber laser

We report on the observation of quantum-limited timing jitter in a harmonically mode-locked soliton fiber laser with an ultralow-noise local oscillator. The effects of amplitude and phase modulation on the spectrum are described and compared with theory.

Self-stabilized passive, harmonically mode-locked stretched-pulse erbium fiber ring laser

We have studied a passive, harmonically mode-locked stretched-pulse erbium fiber ring laser with net positive dispersion that is self-stabilized by gain depletion and electrostriction. Periodic pulses with supermode suppression of >75 dB and picosecond jitter are achieved. The pulses are compressible to 125 fs by external chirp compensation. The repetition rate is 220 MHz, and the average power is as high as 80 mW.

Quantum-limited noise performance of a mode-locked laser diode

Low-noise operation of a 9-GHz hybridly mode-locked laser diode is demonstrated. The integrated timing jitter was 47 fs (10 Hz to 10 MHz) and 86 fs (10 Hz to 4.5 GHz), with a pulse width of 6.7 ps. The noise performance as a function of filter bandwidth and oscillator noise is also addressed.

Stabilization of an active harmonically mode-locked fiber laser using two-photon absorption

Two-photon absorption provided by a semiconductor mirror structure is shown to reduce amplitude fluctuations significantly in a harmonically mo e-locked fiber ring laser. Pulse dropouts are eliminated in a laser that produces picosecond pulses at a repetition rate of 2 GHz.

Timing restoration dynamics in an actively mode-locked fiber ring laser

Using electronic phase detection, we study the dynamics that govern pulse retiming in an actively mode-locked fiber laser. We compare the dynamics for amplitude and for phase modulation and identify the characteristic time constants for each case. The retiming dynamics for amplitude modulation are revealed as a first-order exponential decay, whereas for phase modulation the dynamics are those of a damped harmonic oscillator. We show that the measured time constants agree with predictions given by the soliton perturbation theory.