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Controllable electronic properties, contact barriers and contact types in a TaSe 2/WSe 2 metal-semiconductor heterostructure. Phys Chem Chem Phys 2024; 26:9657-9664. [PMID: 38469888 DOI: 10.1039/d4cp00122b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Two-dimensional (2D) metallic TaSe2 and semiconducting WSe2 materials have been successfully fabricated in experiments and are considered as promising contact and channel materials, respectively, for the design of next-generation electronic devices. Herein, we design a metal-semiconductor (M-S) heterostructure combining metallic TaSe2 and semiconducting WSe2 materials and investigate the atomic structure, electronic properties and controllable contact types of the combined TaSe2/WSe2 M-S heterostructure using first-principles calculations. Our results reveal that the TaSe2/WSe2 M-S heterostructure can adopt four different stable stacking configurations, all of which exhibit enhanced elastic constants compared to the constituent monolayers. Furthermore, the TaSe2/WSe2 M-S heterostructure exhibits p-type Schottky contact (SC) with Schottky barriers ranging from 0.36 to 0.49 eV, depending on the stacking configurations. The TaSe2/WSe2 M-S heterostructure can be considered as a promising M-S contact for next-generation electronic Schottky devices owing to its small tunneling resistivity of about 2.14 × 10-9 Ω cm2. More interestingly, the TaSe2/WSe2 M-S heterostructure exhibits tunable contact types and contact barriers under the application of an electric field. A negative electric field induces a transition from Schottky contact type to ohmic contact (OC) type. On the other hand, a positive electric field leads to a transformation from p-type SC to n-type SC. Our findings provide valuable insights into the practical applications of the TaSe2/WSe2 M-S heterostructure towards next-generation electronic devices.
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Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS 2/Janus MoSSe van der Waals heterostructure. NANOSCALE ADVANCES 2024; 6:1193-1201. [PMID: 38356616 PMCID: PMC10863720 DOI: 10.1039/d3na00852e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 01/08/2024] [Indexed: 02/16/2024]
Abstract
The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS2/Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS2/MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS2/MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS2/MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.
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Two-dimensional Janus Si 2OX (X = S, Se, Te) monolayers as auxetic semiconductors: theoretical prediction. RSC Adv 2024; 14:4966-4974. [PMID: 38327810 PMCID: PMC10848126 DOI: 10.1039/d4ra00767k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Accepted: 01/31/2024] [Indexed: 02/09/2024] Open
Abstract
The auxetic materials have exotic mechanical properties compared to conventional materials, such as higher indentation resistance, more superior sound absorption performance. Although the auxetic behavior has also been observed in two-dimensional (2D) nanomaterials, to date there has not been much research on auxetic materials in the vertical asymmetric Janus 2D layered structures. In this paper, we explore the mechanical, electronic, and transport characteristics of Janus Si2OX (X = S, Se, Te) monolayers by first-principle calculations. Except for the Si2OTe monolayer, both Si2OS and Si2OSe are found to be stable. Most importantly, both Si2OS and Si2OSe monolayers are predicted to be auxetic semiconductors with a large negative Poisson's ratio. The auxetic behavior is clearly observed in the Janus Si2OS monolayer with an extremely large negative Poisson's ratio of -0.234 in the x axis. At the equilibrium state, both Si2OS and Si2OSe materials exhibit indirect semiconducting characteristics and their band gaps can be easily altered by the mechanical strain. More interestingly, the indirect-direct bandgap phase transitions are observed in both Si2OS and Si2OSe monolayers when the biaxial strains are introduced. Further, the studied Janus structures also exhibit remarkably high electron mobility, particularly along the x direction. Our findings demonstrate that Si2OS and Si2OSe monolayers are new auxetic materials with asymmetric structures and show their great promise in electronic and nanomechanical applications.
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Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc 2CF 2 Heterostructures toward Next-Generation Optoelectronic Devices. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:17251-17260. [PMID: 37972320 DOI: 10.1021/acs.langmuir.3c02329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.
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Crystal lattice and electronic and transport properties of Janus ZrSiSZ 2 (Z = N, P, As) monolayers by first-principles investigations. NANOSCALE ADVANCES 2023; 5:6705-6713. [PMID: 38024315 PMCID: PMC10662022 DOI: 10.1039/d3na00631j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 10/24/2023] [Indexed: 12/01/2023]
Abstract
From the extending requirements for using innovative materials in advanced technologies, it is necessary to explore new materials for relevant applications. In this work, we design new two-dimensional (2D) Janus ZrSiSZ2 (Z = N, P, As) monolayers and investigate their crystal lattice and dynamic stability by using density functional theory investigations. The two stable structures of ZrSiSP2 and ZrSiSAs2 are then systematically examined for thermal, energetic, and mechanical stability, and electronic and transport properties. The calculation results demonstrate that both the ZrSiSP2 and ZrSiSAs2 monolayers have good thermal stability at room temperature and high energetic/mechanical stabilities for experimental synthesis. The studied structures are found to be in-direct semiconductors. Specifically, with moderate band-gap energies of 1.04 to 1.29 eV for visible light absorption, ZrSiSP2 and ZrSiSAs2 can be considered potential candidates for photovoltaic applications. The applied biaxial strains and external electric fields slightly change the band-gap energies of the monolayers. We also calculate the carrier mobilities for the transport properties based on the deformation potential method. Due to the lower effective masses, the carrier mobilities in the x direction are higher than those in the y direction. The carrier mobilities of the ZrSiSP2 and ZrSiSAs2 monolayers are anisotropic not only in transport directions but also for the electrons and holes. We believe that the results of our work may stimulate further studies to explore more new 2D Janus monolayers with novel properties of the MA2Z4 family materials.
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On the impact of adsorbed gas molecules on the anisotropic electro-optical properties of β 12-borophene. Phys Chem Chem Phys 2023; 25:23829-23835. [PMID: 37641558 DOI: 10.1039/d3cp01938a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/31/2023]
Abstract
We theoretically study the role of adsorbed gas molecules on the electronic and optical properties of monolayer β12-borophene with {a,b,c,d,e} atoms in its unit cell. We focus our attention on molecules NH3, NO, NO2, and CO, which provide additional states permitted by the host electrons. Utilizing the six-band tight-binding model based on an inversion symmetry (between {a,e} and {b,d} atoms) and the Kubo formalism, we survey the anisotropic electronic dispersion and the optical multi-interband spectrum produced by molecule-boron coupling. We consider the highest possibilities for the position of molecules on the boron atoms. For molecules on {a,e} atoms, the inherent metallic phase of β12-borophene becomes electron-doped semiconducting, while for molecules on {b,d} and c atoms, the metallic phase remains unchanged. For molecules on {a,e} and {b,d} atoms, we observe a redshift (blueshift) optical spectrum for longitudinal/transverse (Hall) component, while for molecules on c atoms, we find a redshift (blueshift) optical spectrum for longitudinal (transverse/Hall) component. We expect that this study provides useful information for engineering field-effect transistor-based gas sensors.
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First-principles investigations of metal-semiconductor MoSH@MoS 2 van der Waals heterostructures. NANOSCALE ADVANCES 2023; 5:4979-4985. [PMID: 37705766 PMCID: PMC10496895 DOI: 10.1039/d3na00465a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 08/17/2023] [Indexed: 09/15/2023]
Abstract
Two-dimensional (2D) metal-semiconductor heterostructures play a critical role in the development of modern electronics technology, offering a platform for tailored electronic behavior and enhanced device performance. Herein, we construct a novel 2D metal-semiconductor MoSH@MoS2 heterostructure and investigate its structures, electronic properties and contact characteristics using first-principles investigations. We find that the MoSH@MoS2 heterostructure exhibits a p-type Schottky contact, where the specific Schottky barrier height varies depending on the stacking configurations employed. Furthermore, the MoSH@MoS2 heterostructures possess low tunneling probabilities, indicating a relatively low electron transparency across all the patterns of the MoSH@MoS2 heterostructures. Interestingly, by modulating the electric field, it is possible to modify the Schottky barriers and achieve a transformation from a p-type Schottky contact into an n-type Schottky contact. Our findings pave the way for the development of advanced electronics technology based on metal-semiconductor MoSH@MoS2 heterostructures with enhanced tunability and versatility.
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Moderate direct band-gap energies and high carrier mobilities of Janus XWSiP 2 (X = S, Se, Te) monolayers via first-principles investigation. Phys Chem Chem Phys 2023; 25:21468-21478. [PMID: 37539527 DOI: 10.1039/d3cp02037a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Two-dimensional (2D) Janus materials with extraordinary properties are promising candidates for utilization in advanced technologies. In this study, new 2D Janus XWSiP2 (X = S, Se, Te) monolayers were constructed and their properties were systematically analyzed by using first-principles calculations. All three structures of SWSiP2, SeWSiP2, and TeWSiP2 exhibit high energetic stability for the experimental fabrication with negative and high Ecoh values, the elastic constants obey the criteria of Born-Huang, and no imaginary frequency exists in the phonon dispersion spectra. The calculated results from the PBE and HSE06 approaches reveal that the XWSiP2 are semiconductors with moderate direct band-gaps varying from 1.01 eV to 1.06 eV using the PBE method, and 1.39 eV to 1.44 eV using the HSE06 method. In addition, the electronic band structures of the three monolayers are significantly affected by the applied strains. Interestingly, the transitions from a direct to indirect semiconductor are observed for different biaxial strains εb. The transport parameters including the carrier mobility values along the x direction μx and y direction μy were also calculated to study the transport properties of the XWSiP2. The results indicate that the XWSiP2 monolayers not only have high carrier mobilities but also anisotropy in the transport directions for both holes and electrons. Together with the moderate and tunable energy gaps, the XWSiP2 materials are found to be potential candidates for application in the photonic, photovoltaic, optoelectronic, and electronic fields.
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Quantum magneto-transport properties of monolayers MoSi$_2$N$_4$, WSi$_2$N$_4$, and MoSi$_2$As$_4$. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023. [PMID: 37467755 DOI: 10.1088/1361-648x/ace8df] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
We study the transport properties of monolayers MoSi$_2$N$_4$, WSi$_2$N$_4$, and MoSi$_2$As$_4$ in a perpendicular magnetic field. The Landau level (LL) band structures including spin and exchange field effects are derived and discussed using a low-energy effective model. We show that the LLs band structures of these materials are similar to those of phosphorene and transition-metal dichalcogenides rather than graphene or silicene. The combination between strong spin-orbit coupling and exchange fields reduces the degradation of the LLs, leading to new plateaus in the Hall conductivity and Hall resistivity and new peaks in the longitudinal conductivity and longitudinal resistivity. The effect of the exchange field, carrier density, and LLs band structure on the conductivities and resistivities have been investigated. At high temperatures, the steps in Hall conductivity and resistivity plateaus disappear and reduce to their corresponding classical forms.
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Strain-induced phase transitions and high carrier mobility in two-dimensional Janus MGeSN 2 (M = Ti, Zr, and Hf) structures: first-principles calculations. Phys Chem Chem Phys 2023. [PMID: 37381754 DOI: 10.1039/d3cp01647a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/30/2023]
Abstract
In this study, we construct new 2D Janus MGeSN2 (M = Ti, Zr, and Hf) monolayers and systematically investigate their electronic band structures under applied biaxial strain. Their crystal lattice and electronic as well as transport properties are also examined based on the first-principles calculations and deformation potential theory. The results show that the MGeSN2 structures have good dynamical and thermal stability, and their elastic constants satisfy the criteria of Born-Huang also indicating the good mechanical stability of these materials for experimental synthesis. Our calculated results indicate that the TiGeSN2 monolayer exhibits indirect-bandgap semiconductor characteristics whereas the ZrGeSN2 and HfGeSN2 monolayers exhibit direct-bandgap semiconductor characteristics. Importantly, the biaxial strain shows significant influences on the electronic energy band structures of the monolayers in the presence of a phase transition from semiconductor to metal, which is an important feature of these materials for their application in electronic devices. All three structures exhibit anisotropic carrier mobility in both x and y transport directions, suggesting their great potential for application in electronic devices.
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First-principles examination of two-dimensional Janus quintuple-layer atomic structures XCrSiN 2 (X = S, Se, and Te). NANOSCALE ADVANCES 2023; 5:3104-3113. [PMID: 37260499 PMCID: PMC10228358 DOI: 10.1039/d3na00261f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 05/05/2023] [Indexed: 06/02/2023]
Abstract
In this work, we propose novel two-dimensional Janus XCrSiN2 (X = S, Se, and Te) single-layers and comprehensively investigate their crystal structure, electronic properties, and carrier mobility by using a first-principles method. These configurations are the combination of the CrSi2N4 material and a transition metal dichalcogenide. The X-Cr-SiN2 single-layers are constructed by replacing the N-Si-N atomic layer on one side with chalcogen atoms (S, Se, or Te). The structural characteristics, mechanical or thermal stabilities, and electronic properties are investigated adequately. All three examined configurations are energetically stable and are all small-bandgap semiconductors (<1 eV). Since the mirror symmetry is broken in the Janus material, there exists a remarkable built-in electric field and intrinsic dipole moment. Therefore, the spin-orbit interaction is considered intensively. However, it is observed that the spin-orbit coupling has insignificant effects on the electronic properties of XCrSiN2 (X = S, Se, and Te). Moreover, an external electric field and strain are applied to evaluate the adjustment of the electronic features of the three structures. The transport properties of the proposed configurations are calculated and analyzed systematically, indicating the highly directional isotropy. Our results suggest that the proposed Janus XCrSiN2 could be potential candidates for various applications, especially in nanoscale electronic devices.
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Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2XY (X/Y = S, Se, Te) monolayers. RSC Adv 2023; 13:12153-12160. [PMID: 37082371 PMCID: PMC10112393 DOI: 10.1039/d3ra01079a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 04/13/2023] [Indexed: 04/22/2023] Open
Abstract
Group III monochalcogenide compounds can exist in different polymorphs, including the conventional D 3h and C 2h phases. Since the bulk form of the C 2h-group III monochalcogenides has been successfully synthesized [Phys. Rev. B: Condens. Matter Mater. Phys. 73 (2006) 235202], prospects for research on their corresponding monolayers have also been opened. In this study, we design and systematically consider a series of Janus structures formed from the two-dimensional C 2h phase of gallium monochalcogenide Ga2XY (X/Y = S, Se, Te) using first-principles simulations. It is demonstrated that the Janus Ga2XY monolayers are structurally stable and energetically favorable. Ga2XY monolayers exhibit high anisotropic mechanical features due to their anisotropic lattice structure. All Janus Ga2XY are indirect semiconductors with energy gap values in the range from 1.93 to 2.67 eV. Due to the asymmetrical structure, we can observe distinct vacuum level differences between the two surfaces of the examined Janus structures. Ga2XY monolayers have high electron mobility and their carrier mobilities are also highly directionally anisotropic. It is worth noting that the Ga2SSe monolayer possesses superior electron mobility, up to 3.22 × 103 cm2 V-1 s-1, making it an excellent candidate for potential applications in nanoelectronics and nanooptoelectronics.
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Two-dimensional Janus MGeSiP 4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations. Phys Chem Chem Phys 2023; 25:8779-8788. [PMID: 36912122 DOI: 10.1039/d3cp00188a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023]
Abstract
Novel Janus materials have attracted broad interest due to the outstanding properties created by their out-of-plane asymmetry, with increasing theoretical exploration and more reports of successful fabrication in recent years. Here, we construct and explore the crystal structures, stabilities, electronic band structures, and transport properties - including carrier mobilities - of two-dimensional Janus MGeSiP4 (M = Ti, Zr, or Hf) monolayers based on density functional theory calculations. From the cohesive energies, elastic constants, and phonon dispersion calculations, the monolayers are confirmed to exhibit structural stability with high feasibility for experimental synthesis. All the structures are indirect band-gap semiconductors with calculated band-gap energies in the range of 0.77 eV to 1.01 eV at the HSE06 (Heyd-Scuseria-Ernzerhof) level. Interestingly, by applying external biaxial strain, a semiconductor to metal phase transition is observed for the three Janus structures. This suggests potential for promising applications in optoelectronic and electromechanical devices. Notably, the MGeSiP4 monolayers show directionally anisotropic carrier mobility with a high electron mobility of up to 2.72 × 103 cm2 V-1 s-1 for the ZrGeSiP4 monolayer, indicating advantages for applications in electronic devices. Hence, the presented results reveal the novel properties of the 2D Janus MGeSiP4 monolayers and demonstrate their great potential applications in nanoelectronic and/or optoelectronic devices. This investigation could stimulate further theoretical and experimental studies on these excellent materials and motivate further explorations of new members of this 2D Janus family.
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New C 2h phase of group III monochalcogenide monolayers AlX (X = S, Se, and Te) with anisotropic crystal structure: first-principles study. RSC Adv 2023; 13:6838-6846. [PMID: 36865579 PMCID: PMC9973419 DOI: 10.1039/d2ra08012e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/24/2023] [Indexed: 03/04/2023] Open
Abstract
In this paper, we introduce a new phase of two-dimensional aluminum monochalcogenide, namely C 2h-AlX (X = S, Se, and Te). With the C 2h space group, C 2h-AlX possesses a large unit cell containing 8 atoms. The C 2h phase of AlX monolayers is found to be dynamically and elastically stable based on the evaluation of its phonon dispersions and elastic constants. The anisotropic atomic structure of C 2h-AlX leads to a strong anisotropy in its mechanical properties with Young's modulus and Poisson's ratio strongly dependent on the directions examined in the two-dimensional plane. All three monolayers of C 2h-AlX are found to be direct band gap semiconductors, which are compared with the indirect band gap semiconductors of available D 3h-AlX. Particularly, the transition from direct to indirect band gap is observed in C 2h-AlX when a compressive biaxial strain is applied. Our calculated results indicate that C 2h-AlX exhibits anisotropic optical characteristics and its absorption coefficient is high. Our findings suggest that C 2h-AlX monolayers are suitable for applications in next-generation electro-mechanical and anisotropic opto-electronic nanodevices.
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Electronic and optical properties of thiogermanate AgGaGeS 4: theory and experiment. RSC Adv 2023; 13:881-887. [PMID: 36686945 PMCID: PMC9811245 DOI: 10.1039/d2ra07639j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Accepted: 12/20/2022] [Indexed: 01/05/2023] Open
Abstract
The electronic and optical properties of an AgGaGeS4 crystal were studied by first-principles calculations, where the full-potential augmented plane-wave plus local orbital (APW+lo) method was used together with exchange-correlation pseudopotential described by PBE, PBE+U, and TB-mBJ+U approaches. To verify the correctness of the present theoretical calculations, we have measured for the AgGaGeS4 crystal the XPS valence-band spectrum and the X-ray emission bands representing the energy distribution of the electronic states with the biggest contributions in the valence-band region and compared them on a general energy scale with the theoretical results. Such a comparison indicates that, the calculations within the TB-mBJ+U approach reproduce the electron-band structure peculiarities (density of states - DOS) of the AgGaGeS4 crystal which are in fairly good agreement with the experimental data based on measurements of XPS and appropriate X-ray emission spectra. In particular, the DOS of the AgGaGeS4 crystal is characterized by the existence of well-separated peaks/features in the vicinity of -18.6 eV (Ga-d states) and around -12.5 eV and -7.5 eV, which are mainly composed by hybridized Ge(Ga)-s/p and S-p state. We gained good agreement between the experimental and theoretical data with respect to the main peculiarities of the energy distribution of the electronic S 3p, Ag 4d, Ga 4p and Ge 4p states, the main contributors to the valence band of AgGaGeS4. The bottom of the conduction band is mostly donated by unoccupied Ge-s states, with smaller contributions of unoccupied Ga-s, Ag-s and S-p states, too. The AgGaGeS4 crystal is almost transparent for visible light, but it strongly absorbs ultra-violet light where the significant polarization also occurs.
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Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation. Phys Chem Chem Phys 2022; 24:29064-29073. [PMID: 36437803 DOI: 10.1039/d2cp04265g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
The shape of energy dispersions near the band-edges plays a decisive role in the transport properties, especially the carrier mobility, of semiconductors. In this work, we design and investigate the γ phase of tin monoxide and monochalcogenides γ-SnX (X = O, S, Se, and Te) through first-principles simulations. γ-SnX is found to be dynamically stable with phonon dispersions containing only positive phonon frequencies. Due to the hexagonal atomic lattice, the mechanical properties of γ-SnX single-layers are directionally isotropic and their elastic constants meet Born's criterion for mechanical stability. Our calculation results indicate that all four single-layers of γ-SnX are semiconductors with the Mexican-hat dispersions. The biaxial strain not only greatly changes the electronic structures of the γ-SnX single-layers, but also can cause a phase transition from semiconductor to metal. Meanwhile, the effects of an electric field on the electron states of γ-SnX single-layers are insignificant. γ-SnX structures have high electron mobility and their electron mobility is highly directional isotropic along the two transport directions x and y. The findings not only initially introduce the γ phase of group IV-VI compounds, but also serve as a premise for further studies on this material family with potential applications in the future, both theoretically and experimentally.
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Density functional theory investigations of PbSnX 2 (X = S, Se, Te) monolayers: Structural and electronic properties. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
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First-principles study on the structural properties of 2D MXene SnSiGeN 4 and its electronic properties under the effects of strain and an external electric field. RSC Adv 2022; 12:29113-29123. [PMID: 36320756 PMCID: PMC9555058 DOI: 10.1039/d2ra05265b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Accepted: 09/24/2022] [Indexed: 12/04/2022] Open
Abstract
The MXene SnSiGeN4 monolayer as a new member of the MoSi2N4 family was proposed for the first time, and its structural and electronic properties were explored by applying first-principles calculations with both PBE and hybrid HSE06 approaches. The layered hexagonal honeycomb structure of SnSiGeN4 was determined to be stable under dynamical effects or at room temperature of 300 K, with a rather high cohesive energy of 7.0 eV. The layered SnSiGeN4 has a Young's modulus of 365.699 N m-1 and a Poisson's ratio of 0.295. The HSE06 approach predicted an indirect band gap of around 2.4 eV for the layered SnSiGeN4. While the major donation from the N-p orbitals to the band structure makes SnSiGeN4's band gap close to those of similar 2D MXenes, the smaller distributions from the other orbitals of Sn, Si, and Ge slightly vary this band gap. The work functions of the GeN and SiN surfaces are 6.367 eV and 5.903 eV, respectively. The band gap of the layered SnSiGeN4 can be easily tuned by strain and an external electric field. A semiconductor-metal transition can occur at certain values of strain, and with an electric field higher than 5 V nm-1. The electron mobility of the layered SnSiGeN4 can reach up to 677.4 cm2 V-1 s-1, which is much higher than the hole mobility of about 52 cm2 V-1 s-1. The mentioned characteristics make the layered SnSiGeN4 a very promising material for use in electronic and photoelectronic devices, and for solar energy conversion.
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Tunable Electronic Properties of Novel 2D Janus MSiGeN
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(M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Phonon-drag thermopower and thermoelectric performance of MoS 2monolayer in quantizing magnetic field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:315703. [PMID: 35636387 DOI: 10.1088/1361-648x/ac7496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
We present a theory of phonon-drag thermopower,Sxxg, in MoS2monolayer at a low-temperature regime in the presence of a quantizing magnetic fieldB. Our calculations forSxxgconsider the electron-acoustic phonon interaction via deformation potential (DP) and piezoelectric (PE) couplings for longitudinal (LA) and transverse (TA) phonon modes. The unscreened TA-DP is found to dominateSxxgover other mechanisms. TheSxxgis found to oscillate with the magnetic field where the lifting effect of the valley and spin degeneracies in MoS2monolayer has been clearly observed. An enhancedSxxgwith a peak value of∼1mV K-1at aboutT = 10 K is predicted, which is closer to the zero field experimental observation. In the Bloch-Grüneisen regime the temperature dependence ofSxxggives the power-lawSxxg∝Tδe, whereδevaries marginally around 3 and 5 for unscreened and screened couplings, respectively. In addition,Sxxgis smaller for larger electron densityne. The power factor PF is found to increase with temperatureT, decrease withne, and oscillate withB. The prediction of an increase of thermal conductivity with temperature and the magnetic field is responsible for the limit of the figure of merit (ZT). At a particular magnetic field and temperature,ZTcan be maximized by optimizing electron density. By fixingne=1012cm-2, the highestZTis found to be 0.57 atT = 5.8 K andB = 12.1 T. Our findings are compared with those in graphene and MoS2for the zero-magnetic field.
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Magneto-optical absorption properties of topological insulator thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:305702. [PMID: 35545080 DOI: 10.1088/1361-648x/ac6ead] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Accepted: 05/11/2022] [Indexed: 06/15/2023]
Abstract
We theoretically study the magneto-optical absorption coefficients (MOACs) and the refractive index changes (RICs) due to both intra- and inter-band transitions in topological insulator (TI) thin films. The interplay between Zeeman energy and hybridization contribution leads to a transition between the normal insulator phase and the TI phase. The difference in the optical response in these two phases as well as at the phase transition point has been analyzed. The influence of the electron density, magnetic field, and temperature on the MOACs and RICs in both intra- and inter-band transitions is investigated. Our results show that the electron density affects directly the threshold energy. At a finite temperature, the thermal excitation causes the triggering of some new transitions which do not appear atT= 0 K. Evidence of the half-peak feature of the first inter-band transition is also found in TI thin films.
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Puckered Penta-like PdPX (X = O, S, Te) Semiconducting Nanosheets: First-Principles Study of the Mechanical, Electro-Optical, and Photocatalytic Properties. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21577-21584. [PMID: 35471020 DOI: 10.1021/acsami.1c23988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The atomic, electronic, optical, and mechanical properties of penta-like two-dimensional PdPX (X = O, S, Te) nanosheets have been systematically investigated using density functional theory calculations. All three PdPX nanosheets exhibit dynamic and mechanical stability on the basis of an analysis of phonon dispersions and the Born criteria, respectively. The PdPX monolayers are found to be brittle structures. Our calculations demonstrate that the PdPX nanosheets exhibit semiconducting characteristics with indirect band gaps of 0.93 (1.99), 1.34 (2.11), and 0.74 (1.51) eV for X = O, S, Te, respectively, using the PBE (HSE06) functional, where PdPTe is the best material for visible-light photocatalytic water splitting. Our findings give important basic characteristics of penta-like two-dimensional PdPX materials and should motivate further theoretical and experimental investigations of these interesting materials.
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Novel Janus GaInX 3 (X = S, Se, Te) single-layers: first-principles prediction on structural, electronic, and transport properties. RSC Adv 2022; 12:7973-7979. [PMID: 35424776 PMCID: PMC8982447 DOI: 10.1039/d1ra09458k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Accepted: 03/07/2022] [Indexed: 11/21/2022] Open
Abstract
In this paper, the structural, electronic, and transport properties of Janus GaInX3 (X = S, Se, Te) single-layers are investigated by a first-principles calculations. All three structures of GaInX3 are examined to be stable based on the analysis of their phonon dispersions, cohesive energy, and Born's criteria for mechanical stability. At the ground state, The Janus GaInX3 is a semiconductor in which its bandgap decreases as the chalcogen element X moves from S to Te. Due to the vertical asymmetric structure, a difference in the vacuum level between the two surfaces of GaInX3 is found, leading to work functions on the two sides being different. The Janus GaInX3 exhibit high directional isotropic transport characteristics. Particularly, GaInX3 single-layers have high electron mobility, which could make them potential materials for applications in electronic nanodevices.
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Theoretical prediction of Janus PdXO (X = S, Se, Te) monolayers: structural, electronic, and transport properties. RSC Adv 2022; 12:12971-12977. [PMID: 35497018 PMCID: PMC9049866 DOI: 10.1039/d2ra01443b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 04/24/2022] [Indexed: 11/21/2022] Open
Abstract
Due to the broken vertical symmetry, the Janus material possesses many extraordinary physico-chemical and mechanical properties that cannot be found in original symmetric materials.
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Rashba-type spin splitting and transport properties of novel Janus $X$WGeN$_2$ ($X =$ O, S, Se, Te) monolayers. Phys Chem Chem Phys 2022; 24:16512-16521. [DOI: 10.1039/d2cp02015g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We propose and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers $X$WGeN$_2$ ($X =$ O, S, Se, Te) using {\it ab-initio} density functional theory. All four monolayers...
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Novel Janus group III chalcogenide monolayers Al 2XY 2(X/Y = S, Se, Te): first-principles insight onto the structural, electronic, and transport properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:115601. [PMID: 34915459 DOI: 10.1088/1361-648x/ac4401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 12/16/2021] [Indexed: 06/14/2023]
Abstract
Motivated by the recent successful synthesis of 2D quintuple-layer atomic materials, for the first time, we design and investigate the electronic and transport properties of Janus Al2XY2(X/Y = S, Se, Te; X ≠ Y) monolayers by using the density functional theory. Our calculations demonstrate that most of the models of Al2XY2(except for Al2STe2monolayer) are dynamically and mechanically stable. By using the hybrid functional, all models of Al2XY2are semiconductors with an indirect bandgap. Meanwhile, Al2TeS2monolayer is found to be metal at the Perdew-Burke-Ernzerhof level. Due to the vertical asymmetry structure, an intrinsic built-in electric field exists in the Al2XY2and leads to a difference in the vacuum levels between the two sides of the monolayers. Carrier mobilities of Al2XY2monolayers are high directional anisotropic due to the anisotropy of their deformation potential constant. Al2XY2monolayers exhibit high electron mobility, particularly, the electron mobility of Al2SeS2exceeds 1 × 104cm2V-1 s-1, suggesting that they are suitable for applications in nanometer-sized electronic devices.
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First-principles insights onto structural, electronic and optical properties of Janus monolayers CrXO (X = S, Se, Te). RSC Adv 2021; 11:39672-39679. [PMID: 35494112 PMCID: PMC9044576 DOI: 10.1039/d1ra07876c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Accepted: 12/07/2021] [Indexed: 11/21/2022] Open
Abstract
The lacking of the vertical mirror symmetry in Janus structures compared to their conventional metal monochalcogenides/dichalcogenides leads to their characteristic properties, which are predicted to play significant roles for various promising applications. In this framework, we systematically examine the structural, mechanical, electronic, and optical properties of the two-dimensional 2H Janus CrXO (X = S, Se, Te) monolayers by using first-principles calculation method based on density functional theory. The obtained results from optimization, phonon spectra, and elastic constants demonstrate that all three Janus monolayers present good structural and mechanical stabilities. The calculated elastic constants also indicate that the Janus CrTeO monolayer is much mechanically flexible than the other two monolayers due to its low Young's modulus value. The metallic behavior is observed at the ground state for the Janus CrSeO and CrTeO monolayers in both PBE and HSE06 levels. Meanwhile, the Janus CrSO monolayer exhibits a low indirect semiconducting characteristic. The bandgap of CrSO after the correction of HSE06 hybrid functional is the average value of its binary transition metal dichalcogenides. The broad absorption spectrum of CrSO reveals the wide activated range from the visible to near-ultraviolet region. Our findings not only present insight into the brand-new Janus CrXO monolayers but can also motivate experimental research for several applications in optoelectric and nanoelectromechanical devices.
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Two-dimensional Dirac half-metal in porous carbon nitride C 6N 7monolayer via atomic doping. NANOTECHNOLOGY 2021; 33:075707. [PMID: 34673552 DOI: 10.1088/1361-6528/ac31e7] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Motivated by the recent experimental discovery of C6N7monolayer (Zhaoet al2021Science Bulletin66, 1764), we show that C6N7monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C6N7are investigated by both the PBE and HSE06 functionals. Pristine C6N7monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C6N7takes place, the substitution of an N atom with a C atom transforms the monolayer into a dilute magnetic semiconductor, with the spin-up channel showing a band gap of 2.3 eV, while the spin-down channel exhibits a semimetallic phase with multiple Dirac points. The thermodynamic stability of the system is also checked out via AIMD simulations, showing the monolayer to be free of distortion at 500 K. The emergence of Dirac half-metal in carbon nitride monolayer via atomic doping reveals an exciting material platform for designing novel nanoelectronics and spintronics devices.
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Structural, electronic, and transport properties of Janus GaIn X2( X=S, Se, Te) monolayers: first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:045501. [PMID: 34670205 DOI: 10.1088/1361-648x/ac316e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional Janus monolayers have outstanding electronic and transport properties due to their asymmetric atomic structures. In the present work, we systematically study the structural, electronic, and transport properties of the Janus GaInX2(X= S, Se, Te) monolayers by using the first-principles calculations. The stability of the investigated monolayers is confirmed via the analysis of vibrational spectrum and molecular dynamics simulations. Our calculations demonstrate that while GaInS2and GaInSe2monolayers are direct semiconductors, GaInTe2monolayer exhibits the characteristics of an indirect semiconductor. The band gap of GaInX2decreases when the chalcogen elementXvaries from S to Te. Obtained results reveal that small spin-orbit splitting energy in the valence band is found around the Γ point of the Brillouin zone when the spin-orbit coupling is included. Interestingly, GaInS2and GaInSe2have high and directional isotropic electron mobility meanwhile the directional anisotropy of the electron mobility is found in the Janus GaInTe2monolayer. Our findings not only present superior physical properties of GaInX2monolayers but also show promising potential applications of these materials in nanoelectronic devices.
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First-principles calculations to investigate electronic properties of ZnO/PtSSe van der Waals heterostructure: Effects of vertical strain and electric field. Chem Phys 2021. [DOI: 10.1016/j.chemphys.2021.111333] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
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Quaternary Tl2CdGeSe4 selenide: Electronic structure and optical properties of a novel semiconductor for potential application in optoelectronics. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122453] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer. RSC Adv 2021; 11:28381-28387. [PMID: 35480779 PMCID: PMC9038035 DOI: 10.1039/d1ra05424d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Accepted: 08/17/2021] [Indexed: 11/21/2022] Open
Abstract
Although O is an element of chalcogen group, the study of two-dimensional (2D) O-based Janus dichalcogenides/monochalcogenides, especially their 1T-phase, has not been given sufficient attention. In this work, we systematically investigate the structural, electronic, and optical properties of 1T Janus GeSO monolayer by using the density functional theory. Via the analysis of phonon spectrum and evaluation of elastic constants, the GeSO monolayer is confirmed to be dynamically and mechanically stable. Calculated results for the elastic constants demonstrate that the Janus GeSO monolayer is much mechanically flexible than other 2D materials due to its small Young's modulus. At the ground state, while both GeS2 and GeO2 monolayers are indirect semiconductors, the Janus GeSO monolayer is found to be a direct band gap semiconductor. Further, effective masses of both electrons and holes are predicted to be directionally isotropic. The Janus GeSO monolayer has a broad absorption spectrum, which is activated from the visible light region and its absorption intensity is very high in the near-ultraviolet region. The calculated results not only systematically provide the fundamental physical properties of GeSO monolayer, but also stimulate scientists to further studying its importance both theoretically and experimentally.
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Outstanding elastic, electronic, transport and optical properties of a novel layered material C 4F 2: first-principles study. RSC Adv 2021; 11:23280-23287. [PMID: 35479814 PMCID: PMC9036559 DOI: 10.1039/d1ra04065k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 06/25/2021] [Indexed: 11/21/2022] Open
Abstract
Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namely fluorinated diamane C4F2) [P. V. Bakharev, M. Huang, M. Saxena, S. W. Lee, S. H. Joo, S. O. Park, J. Dong, D. C. Camacho-Mojica, S. Jin, Y. Kwon, M. Biswal, F. Ding, S. K. Kwak, Z. Lee and R. S. Ruoff, Nat. Nanotechnol., 2020, 15, 59–66], we systematically investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C4F2 by using density functional theory. Our obtained results demonstrate that at the ground state, the lattice constant of C4F2 is 2.56 Å with chemical bonding between the C–C interlayer and intralayer bond lengths of about 1.5 Å which are close to the C–C bonding in the bulk diamond. Based on calculations for the phonon spectrum and ab initio molecular dynamics simulations, the structure of C4F2 is confirmed to be dynamically and thermally stable. C4F2 exhibits superior mechanical properties with a very high Young's modulus of 493.19 N m−1. Upon fluorination, the formation of C–C bonding between graphene layers has resulted in a comprehensive alteration of electronic properties of C4F2. C4F2 is a direct semiconductor with a large band gap and phase transitions are found when a biaxial strain or external electric field is applied. Interestingly, C4F2 has very high electron mobility, up to 3.03 × 103 cm2 V−1 s−1, much higher than other semiconductor compounds. Our findings not only provide a comprehensive insight into the physical properties of C4F2 but also open up its applicability in nanoelectromechanical and optoelectronic devices. Motivated by transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (fluorinated diamane C4F2), we investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C4F2 using density functional theory.![]()
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Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:225503. [PMID: 33784649 DOI: 10.1088/1361-648x/abf381] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Inspired by the successfully experimental synthesis of Janus structures recently, we systematically study the electronic, optical, and electronic transport properties of Janus monolayers In2XY(X/Y= S, Se, Te withX≠Y) in the presence of a biaxial strain and electric field using density functional theory. Monolayers In2XYare dynamically and thermally stable at room temperature. At equilibrium, both In2STe and In2SeTe are direct semiconductors while In2SSe exhibits an indirect semiconducting behavior. The strain significantly alters the electronic structure of In2XYand their photocatalytic activity. Besides, the indirect-direct gap transitions can be found due to applied strain. The effect of the electric field on optical properties of In2XYis negligible. Meanwhile, the optical absorbance intensity of the Janus In2XYmonolayers is remarkably increased by compressive strain. Also, In2XYmonolayers exhibit very low lattice thermal conductivities resulting in a high figure of meritZT, which makes them potential candidates for room-temperature thermoelectric materials.
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Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer. RSC Adv 2021; 11:8552-8558. [PMID: 35423400 PMCID: PMC8695274 DOI: 10.1039/d1ra00576f] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 02/18/2021] [Indexed: 11/21/2022] Open
Abstract
Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems. In the present study, we investigate the structural, elastic, and electronic properties of hexagonal boron phosphide monolayer functionalized by Br and Cl atoms using first-principles predictions. Once surface-functionalized with Br/Cl atoms, the planar structure of BP monolayer is transformed to the low-buckled lattice with the bucking constant of about 0.6 Å for all four configurations of functionalized boron phosphide, i.e., Cl-BP-Cl, Cl-BP-Br, Br-BP-Cl, and Br-BP-Br. The stability of functionalized BP monolayers is confirmed via their phonon spectra analysis and ab initio molecular dynamics simulations. Our calculations indicate that the functionalized BP monolayers possess a fully isotropic elastic characteristic with the perfect circular shape of the angle-dependent Young's modulus and Poisson's ratio due to the hexagonal symmetry. The Cl-BP-Cl is the most stiff with the Young's modulus C 2D = 43.234 N m-1. All four configurations of the functionalized boron phosphide are direct semiconductors with a larger band gap than that of a pure BP monolayer. The outstanding stability, isotropic elastic properties, and moderate band gap make functionalized boron phosphide a very intriguing candidate for next-generation nanoelectromechanical devices.
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Multi-orbital tight binding model for the electronic and optical properties of armchair graphene nanoribbons in the presence of a periodic potential. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:155702. [PMID: 33482663 DOI: 10.1088/1361-648x/abdf01] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Accepted: 01/22/2021] [Indexed: 06/12/2023]
Abstract
The influences of an external electric field with uniform or modulated potential on the electronic and optical properties of armchair graphene nanoribbons (GNRs) are explored using the multi-orbital tight-binding Hamiltonian. The interplay between an electric field and interaction between (s,px,py,pz) orbitals remarkably enriches the main features of band structures and absorption spectra. The applied electric field can notably alter the energy dispersions ofπandσbands, leading to the deformation of band-edge states, open and close of a band gap, and modification of the Fermi energy. The vertical optical excitations happen among theπbands, while their available channels depend on the Fermi level which is controlled by theσ-edge bands and a finite potential. With the rich and unique properties, GNRs are suitable candidates for applications in the fields of photodetectors, nanoelectronics, and spintronics. The calculated results are expected to be examined by the angle-resolved photoemission spectroscopies and optical spectroscopies.
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Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach. Sci Rep 2021; 11:4015. [PMID: 33597625 PMCID: PMC7889662 DOI: 10.1038/s41598-021-83583-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 02/04/2021] [Indexed: 11/21/2022] Open
Abstract
We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum ring coupled structure, inspired by the recent experimental report by Elborg and collaborators (2017). The finite element method constitutes the numerical technique used to solve the three-dimensional effective mass equation within the parabolic band approximation, including the effects of externally applied electric and magnetic fields. Initially, the features of conduction electron states in the proposed system appear discussed in detail, under different geometrical configurations and values of the intensity of the aforementioned electromagnetic probes. In the second part, the properties of an electron-hole pair confined within the very kind of structure reported in the reference above are investigated via a model that tries to reproduce as close as possible the developed profile. In accordance, we report on the energies of confined electron and hole, affected by the influence of an external electric field, revealing the possibility of field-induced separate spatial localization, which may result in an indirect exciton configuration. In relation with this fact, we present a preliminary analysis of such phenomenon via the calculation of the Coulomb integral.
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Ab initio study of the structural, electronic, optical and elastic properties of promising optoelectronic and thermoelectric compounds MgSc2X4 (X = S; Se). J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2020.121763] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Surface modification of titanium carbide MXene monolayers (Ti 2C and Ti 3C 2) via chalcogenide and halogenide atoms. Phys Chem Chem Phys 2021; 23:15319-15328. [PMID: 34254093 DOI: 10.1039/d1cp01788h] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C-O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.
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Type-I band alignment of BX-ZnO (X = As, P) van der Waals heterostructures as high-efficiency water splitting photocatalysts: a first-principles study. RSC Adv 2020; 10:44545-44550. [PMID: 35517160 PMCID: PMC9058505 DOI: 10.1039/d0ra09701b] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 11/20/2020] [Indexed: 01/06/2023] Open
Abstract
In this work, we perform first-principles calculations to examine the electronic, optical and photocatalytic properties of the BX–ZnO (X = As, P) heterostructures. The interlayer distance and binding energy of the most energetically favorable stacking configuration are 3.31 Å and −0.30 eV for the BAs–ZnO heterostructure and 3.30 Å and −0.25 eV for the BP–ZnO heterostructure. All the stacking patterns of the BX–ZnO heterostructures are proved to have thermal stability by performing AIMD simulations. The BAs–ZnO and BP–ZnO heterostructures are semiconductors with direct band gaps of 1.43 eV and 2.35 eV, respectively, and they exhibit type-I band alignment, which make them suitable for light emission applications with the ultra-fast recombination between electrons and holes. Both the BAs–ZnO and BP–ZnO heterostructures can exhibit a wider optical absorption range for visible-light owing to their reduced band gaps compared with the isolated BAs, BP and ZnO monolayers. The band alignment of both the BAs–ZnO and BP–ZnO heterostructures can straddle the water redox potential and they would have better performances owing to the direct band gap and the reduced band gap. All these findings demonstrate that the BX–ZnO heterostructures can be considered as potential photocatalysts for water splitting. In this work, we perform first-principles calculations to examine the electronic, optical and photocatalytic properties of the BX–ZnO (X = As, P) heterostructures.![]()
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Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study. RSC Adv 2020; 10:40411-40420. [PMID: 35520824 PMCID: PMC9057461 DOI: 10.1039/d0ra05030j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2020] [Accepted: 10/15/2020] [Indexed: 11/26/2022] Open
Abstract
In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations. The two dimensional (2D) material stability is confirmed by the phonon dispersion curves and binding energies. Full functionalization causes notable changes in the monolayer structure and slightly reduces the chemical stability. The simulations predict that the MgO single layer is an indirect semiconductor with an energy gap of 3.481 (4.693) eV as determined by the GGA-PBE (HSE06) functional. The electronic structure of the MgO monolayer exhibits high sensitivity to chemical functionalization. Specifically, nitrogenation induces metallization of the MgO monolayer, while an indirect–direct band gap transition and band gap reduction of 81.34 (59.96)% are achieved by means of fluorination. Consequently, the functionalized single layers display strong optical absorption in the infrared and visible regimes. The results suggest that full nitrogenation and fluorination may be a quite effective approach to enhance the optoelectronic properties of the MgO monolayer for application in nano-devices. In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations.![]()
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Stark and Zeeman effects on the topological phase and transport properties of topological crystalline insulator thin films. Phys Chem Chem Phys 2020; 22:12129-12139. [PMID: 32436504 DOI: 10.1039/d0cp00914h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The fundamental investigation of topological crystalline insulator (TCI) thin films is essential for observing interesting phenomena. In practice, a promising pathway involves the application of electric and magnetic fields to tune the topological phases of TCI thin films. To achieve this, we applied a perpendicular electric field and an in-plane magnetic field to not only tune the Dirac gap of a SnTe(001) thin film and find the phase transition but also to directly connect them with their effects on the group velocity of both massless and massive surface Dirac fermions. The TCI thin film is an inherent insulator due to the hybridization between the front and back surfaces, and it transitions to a semimetal phase at a critical perpendicular electric field due to the Stark effect. Correspondingly, the anisotropic group velocity of the upper (lower) conduction (valence) band decreases (increases) with the electric field at certain momenta. We found that when one of the in-plane Zeeman field components becomes stronger than the intrinsic hybridization potential, the anisotropic Weyl cones with opposite chiralities retrieve at the critical momenta and the corresponding group velocities become zero. Further, the isotropic in-plane Zeeman field leads to rotation of the band structure, as expected, resulting in non-zero group velocities along all directions. Finally, for the sake of completeness, the combined Stark and Zeeman effects are tracked and the results show that the system is an insulator at all fields and the group velocities are altered more than when the individual Stark and Zeeman effects are applied. Our findings may provide interesting physical insights for practical applications in nanoelectronics and spintronics.
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Tuning the electronic, photocatalytic and optical properties of hydrogenated InN monolayer by biaxial strain and electric field. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2019.110677] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
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First-principles prediction of chemically functionalized InN monolayers: electronic and optical properties. RSC Adv 2020; 10:10731-10739. [PMID: 35492933 PMCID: PMC9050379 DOI: 10.1039/d0ra01025a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2020] [Accepted: 03/09/2020] [Indexed: 11/21/2022] Open
Abstract
In this work, we consider the electronic and optical properties of chemically functionalized InN monolayers with F and Cl atoms (i.e., F-InN-F, F-InN-Cl, Cl-InN-F, Cl-InN-Cl monolayers) using first-principles calculations. The adsorption of the F and Cl atoms on the InN monolayer is determined to be chemically stable and the F-InN-F monolayer is most likely to occur. Our calculations show that the chemical functionalization with Cl and F atoms not only breaks the planar structure of InN monolayer but also increases its band gap. By using both Perdew, Burke, and Ernzerhof (PBE) and the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functionals, all four models of chemically functionalized InN monolayers are found to be semiconductors with direct energy gaps and these gaps depend on the constituent species. When the spin-orbit coupling (SOC) was included, the energy gap of these monolayers was reduced and an energy splitting was found at the Γ-point in the valence band. Chemically functionalized InN monolayers can absorb light in a wide region, especially the F-InN-F and Cl-InN-F monolayers have a strong ability to absorb the visible light. Our findings reveal that the chemically functionalized InN monolayers have potential applications in next-generation optoelectronic devices.
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Computational insights into structural, electronic and optical characteristics of GeC/C 2N van der Waals heterostructures: effects of strain engineering and electric field. RSC Adv 2020; 10:2967-2974. [PMID: 35496107 PMCID: PMC9048868 DOI: 10.1039/c9ra08749d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 01/03/2020] [Indexed: 01/14/2023] Open
Abstract
Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices. Here, using first principles calculations, we propose a GeC/C2N van der Waals heterostructure and investigate its electronic and optical properties. We demonstrate that the intrinsic electronic properties of both GeC and C2N monolayers are quite preserved in GeC/C2N HTS owing to the weak forces. At the equilibrium configuration, GeC/C2N HTS forms the type-II band alignment with an indirect band gap of 0.42 eV, which can be considered to improve the effective separation of electrons and holes. Besides, GeC/C2N vdW-HTS exhibits strong absorption in both visible and near ultra-violet regions with an intensity of 105 cm−1. The electronic properties of GeC/C2N HTS can be tuned by applying an electric field and vertical strains. The semiconductor to metal transition can be achieved in GeC/C2N HTS in the case when the positive electric field of +0.3 V Å−1 or the tensile vertical strain of −0.9 Å is applied. These findings demonstrate that GeC/C2N HTS can be used to design future high-performance multifunctional devices. Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices.![]()
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Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures. NEW J CHEM 2020. [DOI: 10.1039/d0nj03236k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
The combination of two-dimensional materials in the form of van der Waals (vdW) heterostructures has been shown to be an effective method for designing electronic and optoelectronic equipment.
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Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2019.110543] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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Effects of electric field and strain engineering on the electronic properties, band alignment and enhanced optical properties of ZnO/Janus ZrSSe heterostructures. RSC Adv 2020; 10:9824-9832. [PMID: 35498594 PMCID: PMC9050402 DOI: 10.1039/d0ra00917b] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2020] [Accepted: 02/27/2020] [Indexed: 12/21/2022] Open
Abstract
The formation of van der Waals heterostructures (vdWHs) have recently emerged as promising structures to make a variety of novel nanoelectronic and optoelectronic devices. Here, in this work, we investigate the structural, electronic and optical features of ZnO/ZrSSe vdWHs for different stacking patterns of ZnO/SeZrS and ZnO/SZrSe by employing first-principles calculations. Binding energy and ab initio molecular dynamics calculations are also employed to confirm the structural and thermal stability of the ZnO/ZrSSe vdWHs for both models. We find that in both stacking models, the ZnO and ZrSSe layers are bonded via weak vdW forces, leading to easy exfoliation of the layers. More interestingly, both the ZnO/SeZrS and ZnO/SZrSe vdWHs posses type-II band alignment, making them promising candidates for the use of photovoltaic devices because the photogenerated electrons–holes are separated at the interface. The ZnO/ZrSSe vdWHs for both models possess high performance absorption in the visible and near-infrared regions, revealing their use for acquiring efficient photocatalysts. Moreover, the band gap values and band alignments of the ZnO/ZrSSe for both models can be adjusted by an electric field as well as vertical strains. There is a transformation from semiconductor to metal under a negative electric field and tensile vertical strain. These findings demonstrate that ZnO/ZrSSe vdWHs are a promising option for optoelectronic and nanoelectronic applications. Here, in this work, we investigate the structural, electronic and optical features of ZnO/ZrSSe vdWHs for different stacking patterns of ZnO/SeZrS and ZnO/SZrSe by employing first-principles calculations.![]()
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Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures. Phys Chem Chem Phys 2020; 22:7952-7961. [DOI: 10.1039/c9cp07009e] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of nanoelectronic and optoelectronic devices.
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