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Shikin AM, Rybkina AA, Estyunin DA, Klimovskikh II, Rybkin AG, Filnov SO, Koroleva AV, Shevchenko EV, Likholetova MV, Voroshnin VY, Petukhov AE, Kokh KA, Tereshchenko OE, Petaccia L, Di Santo G, Kumar S, Kimura A, Skirdkov PN, Zvezdin KA, Zvezdin AK. Non-monotonic variation of the Kramers point band gap with increasing magnetic doping in BiTeI. Sci Rep 2021; 11:23332. [PMID: 34857800 PMCID: PMC8639783 DOI: 10.1038/s41598-021-02493-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 10/27/2021] [Indexed: 12/01/2022] Open
Abstract
Polar Rashba-type semiconductor BiTeI doped with magnetic elements constitutes one of the most promising platforms for the future development of spintronics and quantum computing thanks to the combination of strong spin-orbit coupling and internal ferromagnetic ordering. The latter originates from magnetic impurities and is able to open an energy gap at the Kramers point (KP gap) of the Rashba bands. In the current work using angle-resolved photoemission spectroscopy (ARPES) we show that the KP gap depends non-monotonically on the doping level in case of V-doped BiTeI. We observe that the gap increases with V concentration until it reaches 3% and then starts to mitigate. Moreover, we find that the saturation magnetisation of samples under applied magnetic field studied by superconducting quantum interference device (SQUID) magnetometer has a similar behaviour with the doping level. Theoretical analysis shows that the non-monotonic behavior can be explained by the increase of antiferromagnetic coupled atoms of magnetic impurity above a certain doping level. This leads to the reduction of the total magnetic moment in the domains and thus to the mitigation of the KP gap as observed in the experiment. These findings provide further insight in the creation of internal magnetic ordering and consequent KP gap opening in magnetically-doped Rashba-type semiconductors.
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Affiliation(s)
- A M Shikin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.
| | - A A Rybkina
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - D A Estyunin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - I I Klimovskikh
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - A G Rybkin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - S O Filnov
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - A V Koroleva
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - E V Shevchenko
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - M V Likholetova
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - V Yu Voroshnin
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Helmholtz-Zentrum Berlin für Materialien und Energie, BESSY II, 12489, Berlin, Germany
| | - A E Petukhov
- Saint Petersburg State University, Saint Petersburg, 198504, Russia
| | - K A Kokh
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Kemerovo State University, Kemerovo, 650000, Russia.,Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russia
| | - O E Tereshchenko
- Saint Petersburg State University, Saint Petersburg, 198504, Russia.,Novosibirsk State University, Novosibirsk, 630090, Russia.,A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
| | - L Petaccia
- Elettra Sincrotrone Trieste, 34149, Trieste, Italy
| | - G Di Santo
- Elettra Sincrotrone Trieste, 34149, Trieste, Italy
| | - S Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima, Hiroshima, 739-0046, Japan
| | - A Kimura
- Graduate School of Science, Hiroshima University, Higashi-Hiroshima, 739-8526, Japan
| | - P N Skirdkov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - K A Zvezdin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia
| | - A K Zvezdin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.,P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, 119991, Russia
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Rybkina AA, Rybkin AG, Klimovskikh II, Skirdkov PN, Zvezdin KA, Zvezdin AK, Shikin AM. Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory. Nanotechnology 2020; 31:165201. [PMID: 31860886 DOI: 10.1088/1361-6528/ab6470] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is a very attractive memory technology for near future computers because it has various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell, consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element, a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required to record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.
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Affiliation(s)
- A A Rybkina
- Saint Petersburg State University, Saint Petersburg, 198504 Russia
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