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Steuer O, Schwarz D, Oehme M, Schulze J, Mączko H, Kudrawiec R, Fischer IA, Heller R, Hübner R, Khan MM, Georgiev YM, Zhou S, Helm M, Prucnal S. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting. J Phys Condens Matter 2022; 35:055302. [PMID: 36395508 DOI: 10.1088/1361-648x/aca3ea] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Accepted: 11/17/2022] [Indexed: 06/16/2023]
Abstract
The pseudomorphic growth of Ge1-xSnxon Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1-xSnxalloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1-xSnxalloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm-2, the Ge0.89Sn0.11layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.
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Affiliation(s)
- O Steuer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - D Schwarz
- University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany
| | - M Oehme
- University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany
| | - J Schulze
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany
| | - H Mączko
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - R Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - I A Fischer
- Experimental Physics and Functional Materials, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany
| | - R Heller
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - R Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M M Khan
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Y M Georgiev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd, 1784 Sofia, Bulgaria
| | - S Zhou
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - S Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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Kopaczek J, Zelewski S, Yumigeta K, Sailus R, Tongay S, Kudrawiec R. Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2, MoSe 2, MoTe 2, WS 2, and WSe 2 Crystals. J Phys Chem C Nanomater Interfaces 2022; 126:5665-5674. [PMID: 35392435 PMCID: PMC8978178 DOI: 10.1021/acs.jpcc.2c01044] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Following the rise of interest in the properties of transition metal dichalcogenides, many experimental techniques were employed to research them. However, the temperature dependencies of optical transitions, especially those related to band nesting, were not analyzed in detail for many of them. Here, we present successful studies utilizing the photoreflectance method, which, due to its derivative and absorption-like character, allows investigating direct optical transitions at the high-symmetry point of the Brillouin zone and band nesting. By studying the mentioned optical transitions with temperature from 20 to 300 K, we tracked changes in the electronic band structure for the common transition metal dichalcogenides (TMDs), namely, MoS2, MoSe2, MoTe2, WS2, and WSe2. Moreover, transmission and photoacoustic spectroscopies were also employed to investigate the indirect gap in these crystals. For all observed optical transitions assigned to specific k-points of the Brillouin zone, their temperature dependencies were analyzed using the Varshni relation and Bose-Einstein expression. It was shown that the temperature energy shift for the transition associated with band nesting is smaller when compared with the one at high-symmetry point, revealing reduced average electron-phonon interaction strength.
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Affiliation(s)
- J. Kopaczek
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wroclaw University of Science
and Technology, Wybrzeże Stanisława Wyspiańskiego 27, 50-370 Wrocław, Poland
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - S. Zelewski
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wroclaw University of Science
and Technology, Wybrzeże Stanisława Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - K. Yumigeta
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - R. Sailus
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - S. Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - R. Kudrawiec
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wroclaw University of Science
and Technology, Wybrzeże Stanisława Wyspiańskiego 27, 50-370 Wrocław, Poland
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Welna M, Baranowski M, Linhart WM, Kudrawiec R, Yu KM, Mayer M, Walukiewicz W. Multicolor emission from intermediate band semiconductor ZnO 1-xSe x. Sci Rep 2017; 7:44214. [PMID: 28287140 PMCID: PMC5347037 DOI: 10.1038/srep44214] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2016] [Accepted: 02/03/2017] [Indexed: 12/04/2022] Open
Abstract
Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E− and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.
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Affiliation(s)
- M Welna
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
| | - M Baranowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.,Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France
| | - W M Linhart
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
| | - R Kudrawiec
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
| | - K M Yu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA.,Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
| | - M Mayer
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - W Walukiewicz
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
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Janicki L, Kunert G, Sawicki M, Piskorska-Hommel E, Gas K, Jakiela R, Hommel D, Kudrawiec R. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures. Sci Rep 2017; 7:41877. [PMID: 28150798 PMCID: PMC5288782 DOI: 10.1038/srep41877] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2016] [Accepted: 12/30/2016] [Indexed: 11/09/2022] Open
Abstract
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25-1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.
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Affiliation(s)
- L Janicki
- Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - G Kunert
- Wroclaw Research Center EIT+ Sp. z o.o., ul. Stabłowicka 147, 54-066 Wrocław, Poland.,Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany
| | - M Sawicki
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
| | - E Piskorska-Hommel
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Institute W. Trzebiatowski, ul. Okolna 2, 54- 422 Wroclaw, Poland
| | - K Gas
- Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wroclaw, Poland.,Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
| | - R Jakiela
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
| | - D Hommel
- Wroclaw Research Center EIT+ Sp. z o.o., ul. Stabłowicka 147, 54-066 Wrocław, Poland.,Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany
| | - R Kudrawiec
- Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Dybała F, Polak MP, Kopaczek J, Scharoch P, Wu K, Tongay S, Kudrawiec R. Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions. Sci Rep 2016. [PMID: 27215469 DOI: 10.1063/1.4954157] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/29/2023] Open
Abstract
The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: αA = 2.0 ± 0.1 and αB = 3.6 ± 0.1 meV/kbar for MoS2, αA = 2.3 ± 0.1 and αB = 4.0 ± 0.1 meV/kbar for MoSe2, αA = 2.6 ± 0.1 and αB = 4.1 ± 0.1 meV/kbar for WS2, αA = 3.4 ± 0.1 and αB = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.
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Affiliation(s)
- F Dybała
- Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - M P Polak
- Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - J Kopaczek
- Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - P Scharoch
- Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - K Wu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - S Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - R Kudrawiec
- Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Baranowski M, Kudrawiec R, Latkowska M, Syperek M, Misiewicz J, Sarmiento T, Harris JS. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well. J Phys Condens Matter 2013; 25:065801. [PMID: 23306016 DOI: 10.1088/0953-8984/25/6/065801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.
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Affiliation(s)
- M Baranowski
- Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland.
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Baranowski M, Syperek M, Kudrawiec R, Misiewicz J, Gupta JA, Wu X, Wang R. Carrier dynamics in type-II GaAsSb/GaAs quantum wells. J Phys Condens Matter 2012; 24:185801. [PMID: 22481185 DOI: 10.1088/0953-8984/24/18/185801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.
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Affiliation(s)
- M Baranowski
- Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
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Welna M, Kudrawiec R, Motyka M, Kucharski R, Zając M, Rudziński M, Misiewicz J, Doradziński R, Dwiliński R. Transparency of GaN substrates in the mid-infrared spectral range. Cryst Res Technol 2011. [DOI: 10.1002/crat.201100443] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Baranowski M, Latkowska M, Kudrawiec R, Misiewicz J. Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperature. J Phys Condens Matter 2011; 23:205804. [PMID: 21540495 DOI: 10.1088/0953-8984/23/20/205804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The model of hopping excitons in semiconductors proposed by Baranovskii et al (1998 Phys. Rev. B 58 13081) has been modified and applied to explain sharp lines observed in micro-photoluminescence (μ-PL) spectra of GaInNAs alloys and their changes with excitation power and temperature. Instead of two types of recombination centres (radiative and nonradiative centres) introduced by Baranovskii et alwe have proposed one kind of localization centre with radiative and nonradiative rates. Such a modification is justifiable due to our recent experimental observations for GaInNAs alloys and allows us to explain the fast thermal quenching of localized emission from this alloy. Our simulations clearly show that the individual sharp PL lines observed at low temperatures appear for this material due to exciton hopping between localization centres. Taking into account saturation effects and the exciton dissociation phenomenon, it has been shown that the observed changes in power- and temperature dependent μ-PL spectra can be excellently reproduced by the modified model.
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Affiliation(s)
- M Baranowski
- Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland.
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Kudrawiec R, Misiewicz J. Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations. Rev Sci Instrum 2009; 80:096103. [PMID: 19791974 DOI: 10.1063/1.3213613] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Experimental setup for measurements of photoreflectance (PR) and contactless electroreflectance (CER) spectra in bright and dark configurations is described in this work and applied to study various semiconductor structures. The innovative solution in this setup is the possibility to measure PR and CER spectra in both experimental configurations with the same halogen lamp, monochromator, detector, and only very small modification in the optical path. In this setup the measurement conditions for the two experimental configurations are very similar, and the obtained PR and CER spectra can be compared and discussed in the context of the unwanted constant photovoltaic (PV) effect, which appears in the bright configuration when the sample is illuminated by the spectrum of white light instead of the monochromatic light. It has been clearly shown that for (i) epitaxial layers, (ii) quantum wells, and (iii) quantum dots, exactly the same spectral features are observed in both configurations at room temperature. It means that from the viewpoint of the detection of optical transitions, it is not important what configuration is used since the white light-induced PV effect does not influence the energy of optical transitions in these structures.
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Affiliation(s)
- R Kudrawiec
- Institute of Physics, Wrocław University of Technology, Poland.
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Kudrawiec R, Suski T, Misiewicz J, Muto D, Nanishi Y. Photoreflectance spectroscopy of the band bending and the energy gap for Mg-doped InN layers. ACTA ACUST UNITED AC 2009. [DOI: 10.1002/pssc.200880849] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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12
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Kudrawiec R, Motyka M, Cywin’ski G, Siekacz M, Skierbiszewski C, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Misiewicz J. Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells. ACTA ACUST UNITED AC 2008. [DOI: 10.1002/pssc.200777467] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Kudrawiec R, Bryja L, Sęk G, Ryczko K, Misiewicz J, Forchel A. Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well. Cryst Res Technol 2003. [DOI: 10.1002/crat.200310050] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Paszkiewicz R, Paszkiewicz B, Korbutowicz R, Kozlowski J, Tlaczala M, Bryja L, Kudrawiec R, Misiewicz J. MOVPE GaN Grown on Alternative Substrates. Cryst Res Technol 2001. [DOI: 10.1002/1521-4079(200110)36:8/10<971::aid-crat971>3.0.co;2-b] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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