Synergistic roles of vapor- and liquid-phase epitaxy in the seed-mediated synthesis of substrate-based noble metal nanostructures

Colloidal growth modes reliant on the replication of the crystalline character of a preexisting seed through homoepitaxial or heteroepitaxial depositions have enriched both the architectural diversity and functionality of noble metal nanostructures. Equivalent syntheses, when practiced on seeds formed on a crystalline substrate, must reconcile with the fact that the substrate enters the syntheses as a chemically distinct bulk-scale component that has the potential to impose its own epitaxial influences. Herein, we provide an understanding of the formation of epitaxial interfaces within the context of a hybrid growth mode that sees substrate-based seeds fabricated at high temperatures in the vapor phase on single-crystal oxide substrates and then exposed to a low-temperature liquid-phase synthesis yielding highly faceted nanostructures with a single-crystal character. Using two representative syntheses in which gold nanoplates and silver-platinum core-shell structures are formed, it is shown that the hybrid system behaves unconventionally in terms of epitaxy in that the substrate imposes an epitaxial relationship on the seed but remains relatively inactive as the metal seed imposes an epitaxial relationship on the growing nanostructure. With epitaxy transduced from substrate to seed to nanostructure through what is, in essence, a relay system, all of the nanostructures formed in a given synthesis end up with the same crystallographic orientation relative to the underlying substrate. This work advances the use of substrate-induced epitaxy as a synthetic control in the fabrication of on-chip devices reliant on the collective response of identically aligned nanostructures.

Large-area periodic arrays of gold nanostars derived from HEPES-, DMF-, and ascorbic-acid-driven syntheses

With arms radiating from a central core, gold nanostars represent a unique and fascinating class of nanomaterials from which extraordinary plasmonic properties are derived. Despite their relevance to sensing applications, methods for fabricating homogeneous populations of nanostars on large-area planar surfaces in truly periodic arrays is lacking. Herein, the fabrication of nanostar arrays is demonstrated through the formation of hexagonal patterns of near-hemispherical gold seeds and their subsequent exposure to a liquid-state chemical environment that is conducive to colloidal nanostar formation. Three different colloidal nanostar protocols were targeted where HEPES, DMF, and ascorbic acid represent a key reagent in their respective redox chemistries. Only the DMF-driven synthesis proved readily adaptable to the substrate-based platform but nanostar-like structures emerged from the other protocols when synthetic controls such as reaction kinetics, the addition of Ag⁺ ions, and pH adjustments were applied. Because the nanostars were derived from near-hemispherical seeds, they acquired a unique geometry that resembles a conventional nanostar that has been truncated near its midsection. Simulations of plasmonic properties of this geometry reveal that such structures can exhibit maximum near-field intensities that are as much as seven-times greater than the standard nanostar geometry, a finding that is corroborated by surface-enhanced Raman scattering (SERS) measurements showing large enhancement factors. The study adds nanostars to the library of nanostructure geometries that are amenable to large-area periodic arrays and provides a potential pathway for the nanofabrication of SERS substrates with even greater enhancements.

Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

Fascinating optical properties governed by extremely confined excitons have been so far observed in 2D crystals like monolayers of transition metal dichalcogenides. These materials, however, are limited for production by epitaxial methods. Besides, they are not suitable for the development of optoelectronics for the challenging deep-ultraviolet spectral range. Here, we present a single monolayer of GaN in AlN as a heterostructure fabricated by molecular beam epitaxy, which provides extreme 2D confinement of excitons, being ideally suited for light generation in the deep-ultraviolet. Optical studies in the samples, supplemented by a group-theory analysis and first-principle calculations, make evident a giant enhancement of the splitting between the dark and bright excitons due to short-range electron-hole exchange interaction that is a fingerprint of the strongly confined excitons. The practical significance of our results is in the observation of the internal quantum yield of the room-temperature excitonic emission as high as ∼75% at 235 nm.

Plasmon-Mediated Synthesis of Periodic Arrays of Gold Nanoplates Using Substrate-Immobilized Seeds Lined with Planar Defects

The seed-mediated growth of noble metal nanostructures with planar geometries requires the use of seeds lined with parallel stacking faults so as to provide a break in symmetry in an otherwise isotropic metal. Although such seeds are now routinely synthesized using colloidal pathways, equivalent pathways have not yet been reported for the fabrication of substrate-based seeds with the same internal defect structures. The challenge is not merely to form seeds with planar defects but to do so in a deterministic manner so as to have stacking faults that only run parallel to the substrate surface while still allowing for the lithographic processes needed to regulate the placement of seeds. Here, we demonstrate substrate-imposed epitaxy as a viable synthetic control able to induce planar defects in Au seeds while simultaneously dictating nanostructure in-plane alignment and crystallographic orientation. The seeds, which are formed in periodic arrays using nanoimprint lithography in combination with a vapor-phase assembly process, are subjected to a liquid-phase plasmon-mediated synthesis that uses light as an external stimuli to drive a reaction yielding periodic arrays of hexagonal Au nanoplates. These achievements not only represent the first of their kind demonstrations but also advance the possibility of integrating wafer-based technologies with a rich and exciting nanoplate colloidal chemistry.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Electrochemical synthesis to convert a Ag film into Ag nanoflowers with high electrocatalytic activity

The cyclic scanning electrodeposition method was proposed to convert a thin Ag film into nanocrystals (NCs) with various shapes including nanoflowers, nanorods, dendrites, decahedrons, and icosahedrons. The flower-like Ag NCs exhibit a remarkably enhanced catalytic activity for electro-oxidation of glucose.

Growth of multiple WS2/SnS layered semiconductor heterojunctions

Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers of each of these materials using atomic layer deposition on 5 cm × 5 cm substrates. Initially, WS2 and SnS films were grown and characterized separately. Back-gated transistors of WS2 displayed n-type behavior with an effective mobility of 12 cm(2) V(-1) s(-1), whereas SnS transistors showed a p-type conductivity with a hole mobility of 818 cm(2) V(-1) s(-1). All mobility measurements were performed at room temperature. As expected, the heterostructure displayed an ambipolar behavior with a slightly higher electron mobility than that of WS2 transistors, but with a significantly reduced hole mobility. The reason for this drop can be explained with transmission electron micrographs that show the striation direction of the SnS layers is perpendicular to that of the WS2 with a 15 degree twist, hence the holes have to pass through van der Waals layers that results in drop of their mobility.

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

Irradiation-enhanced reactivity of multilayer Al/Ni nanomaterials

We have investigated the effect of accelerated ion beam irradiation on the structure and reactivity of multilayer sputter deposited Al/Ni nanomaterials. Carbon and aluminum ion beams with different charge states and intensities were used to irradiate the multilayer materials. The conditions for the irradiation-assisted self-ignition of the reactive materials and corresponding ignition thresholds for the beam intensities were determined. We discovered that relatively short (40 min or less) ion irradiations enhance the reactivity of the Al/Ni nanomaterials, that is, significantly decrease the thermal ignition temperatures (Tig) and ignition delay times (τig). We also show that irradiation leads to atomic mixing at the Al/Ni interfaces with the formation of an amorphous interlayer, in addition to the nucleation of small (2-3 nm) Al3Ni crystals within the amorphous regions. The amorphous interlayer is thought to enhance the reactivity of the multilayer energetic nanomaterial by increasing the heat of the reaction and by speeding the intermixing of the Ni and the Al. The small Al3Ni crystals may also enhance reactivity by facilitating the growth of this Al-Ni intermetallic phase. In contrast, longer irradiations decrease reactivity with higher ignition temperatures and longer ignition delay times. Such changes are also associated with growth of the Al3Ni intermetallic and decreases in the heat of reaction. Drawing on this data set, we suggest that ion irradiation can be used to fine-tune the structure and reactivity of energetic nanomaterials.

Formation of three-dimensional islands in subcritical layer deposition in Stranski-Krastanow growth

A new method for the formation of three-dimensional (3D) strained islands in lattice-mismatched (B on A) heteroepitaxy is proposed. Once B forms a wetting layer of a subcritical thickness, material C is deposited, which is lattice matched to A and does not wet B. Then B and C phase separate forming local B-rich and C-rich domains on the surface. The thickness of B-rich domains thus exceeds locally that of the initial film of B, and 3D islands may form as it is demonstrated by modeled phase diagrams of the C/B/A system. We show that the growth of the subcritical InAs/GaAs(100) film followed by the deposition of AlAs results (i) in the formation of Al-rich and In-rich domains in the wetting layer, confirmed by chemically sensitive scanning transmission electron microscopy, and (ii) in the stimulated onset of 3D islands, as evidenced both by high resolution transmission electron microscopy and by a significant redshift of the photoluminescence spectrum, which is in agreement with the proposed model.

Chemical and Structural Analysis of Nitridated Sapphire

The incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

In this study, the causes of biaxial and hydrostatic stress components in epitaxially grown thin GaN films on sapphire are analyzed. It is observed that growth by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical Vapor Deposition (MOCVD) are governed by very similar physical principles. Differences in the absolute stress values are mainly due to the difference in growth temperature. It is argued that in the case of MOCVD growth the onset of plasticity for higher growth temperatures is responsible for a larger stress relaxation in the buffer layer. It is further found that either process can result in highly off-stoichiometric GaN layers, as manifested by the large variations in the a and c lattice parameters caused by intrinsic point defects.

Structural Fingerprinting of Nanocrystals: Advantages of Precession Electron Diffraction, Automated Crystallite Orientation and Phase Maps

Strategies for the structurally identification of nanocrystals from Precession Electron Diffraction (PED) patterns in a Transmission Electron Microscope (TEM) are outlined. A single-crystal PED pattern may be utilized for the structural identification of an individual nanocrystal. Ensembles of nanocrystals may be fingerprinted structurally from “powder PED patterns”. Highly reliable “crystal orientation & structure” maps may be obtained from automatically recorded and processed scanning-PED patterns at spatial resolutions that are superior to those of the competing electron backscattering diffraction technique of scanning electron microscopy. The analysis procedure of that automated technique has recently been extended to Fourier transforms of high resolution TEM images, resulting in similarly effective mappings. Open-access crystallographic databases are mentioned as they may be utilized in support of our structural fingerprinting strategies.

Precession electron diffraction and its advantages for structural fingerprinting in the transmission electron microscope

The foundations of precession electron diffraction in a transmission electron microscope are outlined. A brief illustration of the fact that laboratory-based powder X-ray diffraction fingerprinting is not feasible for nanocrystals is given. A procedure for structural fingerprinting of nanocrystals on the basis of structural data that can be extracted from precession electron diffraction spot patterns is proposed.