Near-room-temperature mid-infrared quantum well photodetector.
ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011;
23:5536-5539. [PMID:
22052780 DOI:
10.1002/adma.201103372]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2011] [Indexed: 05/31/2023]
Abstract
We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.
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