Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells

Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in similar LED structures. Using below-barrier pulsed excitation in the microsecond range, we measured increase and decay of PL pulses. These pulses in wide wells at low-intensity excitation show very slow increase and fast decay. Moreover, the shape of the pulses changes when we vary the separation between them. None of these effects occurs for samples with narrow wells. The unusual properties of wide wells are attributed to the presence of "dark charge" i.e., electrons and holes in the ground states. Their wave functions are spatially separated and due to negligible overlap they do not contribute to emission. However, they screen the built-in field in the well very effectively so that excited states appear with significant overlap and give rise to PL. A simple model of recombination kinetics including "dark charge" explains the observations qualitatively.

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in electric field in the quantum wells (QWs). In this paper we determined to what extent the electric field is screened by injected current. In our approach we used high pressure to study this evolution. In LEDs with a narrow QW (2.6 nm) we found that even at a high injection current a large portion of built-in field remains. In LEDs with very wide QWs (15 and 25 nm) the electric field is fully screened even at the lowest currents. Furthermore, we examined LEDs with a tunnel junction in two locations - above and below the active region. This allowed us to study the cases of parallel and antiparallel fields in the well and in the barriers.

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5° to 2° and decreasing above 2°. This relation can be used as a base for future device designing.

Theoretical study of nitride short period superlattices

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

Band gap engineering of In(Ga)N/GaN short period superlattices

Discussion of band gap behavior based on first principles calculations of the electronic band structures for several InN/GaN superlattices (SLs) (free-standing and pseudomorphic) grown along different directions (polar and nonpolar) is presented. Taking into account the dependence on internal strain and lattice geometry mainly two factors influence the dependence of the band gap, E g on the layer thickness: the internal electric field and the hyb wells) is more important. We also consider mIn ridization of well and barrier wave functions. We illustrate their influence on the band gap engineering by calculating the strength of built-in electric field and the oscillator strength. It appears that there are two interesting ranges of layer thicknesses. In one the influence of the electric field on the gaps is dominant (wider wells), whereas in the other the wave function hybridization (narrow wells) is more important. We also consider mIn 0.33 Ga 0.67 N/nGaN SLs, which seem to be easier to fabricate than high In content quantum wells. The calculated band gaps are compared with recent experimental data. It is shown that for In(Ga)N/GaN superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary InGaN alloys.

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N2. The N2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

Structural Defects in Heteroepitaxial and Homoepitaxial GaN

The microstructure and characteristic defects of heteroepitaxial GaN films grown on sapphire using molecular beam epitaxy (MBE) and metal-organic-chemical-vapor-deposition (MOCVD) methods and of homoepitaxial GaN grown on bulk substrates are described based on transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence (CL) studies. The difference in arrangement of dislocations along grain boundaries and die influence of buffer layers on the quality of epitaxial films is described. The structural quality of GaN epilayers is compared to diat of bulk GaN crystals grown from dilute solution of atomic nitrogen in liquid gallium. The full width at half maximum (FWHM) of the x-ray rocking curves for these crystals was in the range of 20–30 arc sec, whereas for the heteroepitaxially grown GaN the FWHM was in the range of 5–20 arc min. Homoepitaxial MBE grown films had FWHMs of about 40 arc sec. The best film quality was obtained for homoepitaxial films grown using MOCVD; these samples were almost free from extended defects. For the bulk GaN crystals a substantial difference in crystal perfection was observed for the opposite sides of the plates shaped normal to the c direction. On one side the surface was almost atomically flat, and the underlying material was free of any extended structural defects, while the other side was rough, with a high density of planar defects. This difference was related to the polarity of the crystal. A large difference in crystal stoichiometry was also observed within different sublayers of the crystals. Based on convergent beam electron diffraction and cathodoluminescence, it is proposed that GaN antisite defects are related to the yellow luminescence observed in these crystals.

X-Ray Diffraction Studies of Low Temperature GaAs

GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) were studied in a novel purpose designed X-ray experiment. It combines X-ray double crystal rocking curve measurements with some elements usually found in optical setups like light illumination at liquid nitrogen temperatures applied to transfer EL2 type defects into metastable state. Ability to record such transfers with the X-ray experiment as well as large lattice relaxation accompanying this process is presented.

Localized Donors in Gan: Spectroscopy Using Large Pressures

Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydrostatic and biaxial pressure we identify the role of donor dopants and stress induced fields. The doping of Si and 0 as relevant representatives of group-IV and group-VI impurities are studied in Raman spectroscopy. For pressures above 20 GPa we find that oxygen induces a strongly localized gap state while Si continues to behave as a hydrogenic donor. Such a DX-like behavior of 0 indicates and corresponds to doping limitations in AIGaN alloys. The site specific (ON, SiGa) formation of a gap-state is attributed to bond strengths of the respective neighbors. In photoreflection of pseudomorphic GaInN we observe pronounced Franz-Keldysh oscillations corresponding to piezoelectric fields of 0.6 MV/cm. An observed redshift of the luminescence is found to originate in electric field induced tailstates. A reduced but similar effect is expected for GaN possibly explaining observations of persistent photoconductivity in a wide range of materials.

Doping, Activation of Impurities, and Defect Annihilation in Gan by High Pressure Annealing

GaN semiconductor is characterized by strong bonding and high vapor pressure of nitrogen. The strong bonds limit an efficiency of annealing procedures required for variety of semiconductor technologies, for example, post-implantation annealing, or doping by diffussion. Maximum temperatures employed up to now (at ambient pressure) in GaN annealing have not exceeded about 1100°C. A desired increase of annealing temperatures would cause a decomposition of GaN unless an elevated pressure of N2 is supplied. In this work, we report onapplication of high pressure annealing procedures (temperatures up to 1550°C and pressures up to 16 kbar) which enabled us to study variation of the properties of epitaxial films and bulk crystal of GaN. In particular, we discuss the following results obtained using high pressure annealing: i) structural quality improvement and increase of the thermal strain in as grown epitaxial layers of GaN/A12O3, The annealing at above 1300°C resulted in the decrease of the X-ray rocking curve width from about 700 arc sec. down to 470 arc sec., ii) drastic increase of bandedge (bound exciton) photoluminescence intensity iii) enhancement in removal of implant damage, iv) increase of diffusivity of Zn and Mg atoms (introduced by implantation and/or diffusion from external source). For Zn in epitaxial layers of GaN/A12O3 a diffusion starts at 1200–1250°C, v) enhancement of the blue-photoluminescence intensity in Zn and Mg implanted GaN. The performed experiments give an evidence of the importance of the defect (dislocations) in diffusion of Zn and Mg in the GaN semiconductor.

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates.

Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering

We have investigated the lattice dynamics of a wurtzite GaN single crystal by inelastic x-ray scattering. Several dispersion branches and phonons at high-symmetry points have been measured, including the two zone-center Raman- and infrared-inactive silent modes. The experiments have been complemented by ab initio calculations. They are in very good agreement with our measurements, not only for phonon energies, but also for scattering intensities, thus validating the correctness of the eigenvectors. Other phenomenological and ab initio theories exhibit significant differences.