Dopant-additive synergism enhances perovskite solar modules

Perovskite solar cells (PSCs) are among the most promising photovoltaic technologies owing to their exceptional optoelectronic properties1,2. However, the lower efficiency, poor stability and reproducibility issues of large-area PSCs compared with laboratory-scale PSCs are notable drawbacks that hinder their commercialization3. Here we report a synergistic dopant-additive combination strategy using methylammonium chloride (MACl) as the dopant and a Lewis-basic ionic-liquid additive, 1,3-bis(cyanomethyl)imidazolium chloride ([Bcmim]Cl). This strategy effectively inhibits the degradation of the perovskite precursor solution (PPS), suppresses the aggregation of MACl and results in phase-homogeneous and stable perovskite films with high crystallinity and fewer defects. This approach enabled the fabrication of perovskite solar modules (PSMs) that achieved a certified efficiency of 23.30% and ultimately stabilized at 22.97% over a 27.22-cm2 aperture area, marking the highest certified PSM performance. Furthermore, the PSMs showed long-term operational stability, maintaining 94.66% of the initial efficiency after 1,000 h under continuous one-sun illumination at room temperature. The interaction between [Bcmim]Cl and MACl was extensively studied to unravel the mechanism leading to an enhancement of device properties. Our approach holds substantial promise for bridging the benchtop-to-rooftop gap and advancing the production and commercialization of large-area perovskite photovoltaics.

Weak Dispersion of Exciton Landé Factor with Band Gap Energy in Lead Halide Perovskites: Approximate Compensation of the Electron and Hole Dependences

The optical properties of lead halide perovskite semiconductors in vicinity of the bandgap are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor gX is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron, and hole carrier g-factors provide information on the band structure, including its anisotropy, and the parameters contributing to the electron and hole effective masses. Here, gX is measured by reflectivity in magnetic fields up to 60 T for lead halide perovskite crystals. The materials band gap energies at a liquid helium temperature vary widely across the visible spectral range from 1.520 up to 3.213 eV in hybrid organic-inorganic and fully inorganic perovskites with different cations and halogens: FA0.9Cs0.1PbI2.8Br0.2, MAPbI3, FAPbBr3, CsPbBr3, and MAPb(Br0.05Cl0.95)3. The exciton g-factors are found to be nearly constant, ranging from +2.3 to +2.7. Thus, the strong dependences of the electron and hole g-factors on the bandgap roughly compensate each other when combining to the exciton g-factor. The same is true for the anisotropies of the carrier g-factors, resulting in a nearly isotropic exciton g-factor. The experimental data are compared favorably with model calculation results.

Influence of an Organic Salt-Based Stabilizing Additive on Charge Carrier Dynamics in Triple Cation Perovskite Solar Cells

Besides further improvement in the power conversion efficiency (PCE) of perovskite solar cells (PSC), their long-term stability must also be ensured. Additives such as organic cations with halide counter anions are considered promising candidates to address this challenge, conferring both higher performance and increased stability to perovskite-based devices. Here, a stabilizing additive (N,N-dimethylmethyleneiminium chloride, [Dmmim]Cl) is identified, and its effect on charge carrier mobility and lifetime under thermal stress in triple cation perovskite (Cs0.05 MA0.05 FA0.90 PbI3 ) thin films is investigated. To explore the fundamental mechanisms limiting charge carrier mobility, temperature-dependent microwave conductivity measurements are performed. Different mobility behaviors across two temperature regions are revealed, following the power law Tm , indicating two different dominant scattering mechanisms. The low-temperature region is assigned to charge carrier scattering with polar optical phonons, while a strong decrease in mobility at high temperatures is due to dynamic disorder. The results obtained rationalize the improved stability of the [Dmmim]Cl-doped films and devices compared to the undoped reference samples, by limiting temperature-activated mobile ions and retarding degradation of the perovskite film.

Reversible spin-optical interface in luminescent organic radicals

Molecules present a versatile platform for quantum information science1,2 and are candidates for sensing and computation applications3,4. Robust spin-optical interfaces are key to harnessing the quantum resources of materials5. To date, carbon-based candidates have been non-luminescent6,7, which prevents optical readout via emission. Here we report organic molecules showing both efficient luminescence and near-unity generation yield of excited states with spin multiplicity S > 1. This was achieved by designing an energy resonance between emissive doublet and triplet levels, here on covalently coupled tris(2,4,6-trichlorophenyl) methyl-carbazole radicals and anthracene. We observed that the doublet photoexcitation delocalized onto the linked acene within a few picoseconds and subsequently evolved to a pure high-spin state (quartet for monoradical, quintet for biradical) of mixed radical-triplet character near 1.8 eV. These high-spin states are coherently addressable with microwaves even at 295 K, with optical readout enabled by reverse intersystem crossing to emissive states. Furthermore, for the biradical, on return to the ground state the previously uncorrelated radical spins either side of the anthracene shows strong spin correlation. Our approach simultaneously supports a high efficiency of initialization, spin manipulations and light-based readout at room temperature. The integration of luminescence and high-spin states creates an organic materials platform for emerging quantum technologies.

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or g-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI₃, MAPb(Br_0.5Cl_0.5)₃, MAPb(Br_0.05Cl_0.95)₃, FAPbBr₃, FA_0.9Cs_0.1PbI_2.8Br_0.2, MA=methylammonium and FA=formamidinium) and all-inorganic (CsPbBr₃) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10 T at cryogenic temperatures. Further, we use first-principles density functional theory (DFT) calculations in combination with tight-binding and k ⋅ p approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

The Landé factors govern all the spin-related basic phenomena and are the key parameters which guide spintronics applications. Here, Kirstein et al. demonstrate a universal dependence of the Landé factors on the bandgap energy of several perovskite materials.

Single-crystalline TiO2 nanoparticles for stable and efficient perovskite modules

Despite the remarkable progress in power conversion efficiency of perovskite solar cells, going from individual small-size devices into large-area modules while preserving their commercial competitiveness compared with other thin-film solar cells remains a challenge. Major obstacles include reduction of both the resistive losses and intrinsic defects in the electron transport layers and the reliable fabrication of high-quality large-area perovskite films. Here we report a facile solvothermal method to synthesize single-crystalline TiO₂ rhombohedral nanoparticles with exposed (001) facets. Owing to their low lattice mismatch and high affinity with the perovskite absorber, their high electron mobility and their lower density of defects, single-crystalline TiO₂ nanoparticle-based small-size devices achieve an efficiency of 24.05% and a fill factor of 84.7%. The devices maintain about 90% of their initial performance after continuous operation for 1,400 h. We have fabricated large-area modules and obtained a certified efficiency of 22.72% with an active area of nearly 24 cm², which represents the highest-efficiency modules with the lowest loss in efficiency when scaling up.

Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized VB- Spin States in hBN

Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (V_B^-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the V_B^- spin with a characteristic decay time T_coh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the V_B^- spin with the three nearest ¹⁴N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.

Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays

Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (V_B^-) centers. Here, we demonstrate a scalable method to enhance the V_B^- emission using an array of SiO₂ nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the V_B^- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the V_B^- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.

Long-lived spin-polarized intermolecular exciplex states in thermally activated delayed fluorescence-based organic light-emitting diodes

Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find that the triplet exciplex states in OLEDs are highly spin-polarized and show that these states can be decoupled from the heterogeneous nuclear environment as a source of spin dephasing and can even be coherently manipulated on a spin-spin relaxation time scale T₂* of 30 ns. Crucially, we obtain the characteristic triplet exciplex spin-lattice relaxation time T₁ in the range of 50 μs, which far exceeds the RISC time. We conclude that slow spin relaxation rather than RISC is an efficiency-limiting step for intermolecular donor:acceptor systems. Finding TADF emitters with faster spin relaxation will benefit this type of TADF OLEDs.

Detecting triplet states in opto-electronic and photovoltaic materials and devices by transient optically detected magnetic resonance

Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic (OPV) devices, however, triplets are an efficiency-limiting exciton loss channel and are also involved in device degradation. Here, we introduce an innovative spin-sensitive method to study triplet states in both, optically excited organic semiconductor films, as well as in electrically driven devices. The method of transient optically detected magnetic resonance (trODMR) can be applied to all light-emitting materials whose luminescence depends on paramagnetic spin states. It is thus an ideal spectroscopic tool to distinguish different states involved and determine their corresponding time scales. We unravel the role of intermediate excited spin states in opto-electronic and photovoltaic materials and devices and reveal fundamental differences in electrically and optically induced triplet states.

Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities

Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB-. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.

Room temperature coherent control of spin defects in hexagonal boron nitride

Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged [Formula: see text] defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices.

Influence of crystallisation on the structural and optical properties of lead-free Cs2AgBiBr6 perovskite crystals

We compare the growth of Cs2AgBiBr6 crystals by slow and fast evaporation of organic solvents. Using different growth temperatures and precursors enables bridging the gap between the optical properties and applications of Cs2AgBiBr6 in solar cells.

A temperature-reduced method for the rapid growth of hybrid perovskite single crystals with primary alcohols

In this work, we present the simple and temperature-reduced reactive inverse temperature crystallisation (RITC) method to rapidly grow high-quality organic lead trihalide perovskite single crystals.

Highly conducting Wurster-type twisted covalent organic frameworks

Covalent organic frameworks (COFs) define a versatile structural paradigm combining attractive properties such as crystallinity, porosity, and chemical and structural modularity which are valuable for various applications. For the incorporation of COFs into optoelectronic devices, efficient charge carrier transport and intrinsic conductivity are often essential. Here, we report the synthesis of two imine-linked two-dimensional COFs, WTA and WBDT, featuring a redox-active Wurster-type motif based on the twisted tetragonal N,N,N',N'-tetraphenyl-1,4-phenylenediamine node. By condensing this unit with either terephthalaldehyde (TA) or benzodithiophene dialdehyde (BDT), COFs featuring a dual-pore kagome-type structure were obtained as highly crystalline materials with large specific surface areas and mesoporosity. In addition, the experimentally determined high conduction band energies of both COFs render them suitable candidates for oxidative doping. The incorporation of a benzodithiophene linear building block into the COF allows for high intrinsic macroscopic conductivity. Both anisotropic and average isotropic electrical conductivities were determined with van der Pauw measurements using oriented films and pressed pellets, respectively. Furthermore, the impact of different dopants such as F₄TCNQ, antimony pentachloride and iodine on the conductivities of the resulting doped COFs was studied. By using the strong organic acceptor F₄TCNQ, a massive increase of the radical cation density (up to 0.5 radicals per unit cell) and long-term stable electrical conductivity as high as 3.67 S m^-1 were achieved for the anisotropic transport in an oriented film, one of the highest for any doped COF to date. Interestingly, no significant differences between isotropic and anisotropic charge transport were found in films and pressed pellets. This work expands the list of possible building nodes for electrically conducting COFs from planar systems to twisted geometries. The achievement of high and stable electrical conductivity paves the way for possible applications of new COFs in organic (opto)electronics.

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

Optically addressable spins in wide-bandgap semiconductors are a promising platform for exploring quantum phenomena. While colour centres in three-dimensional crystals such as diamond and silicon carbide were studied in detail, they were not observed experimentally in two-dimensional (2D) materials. Here, we report spin-dependent processes in the 2D material hexagonal boron nitride (hBN). We identify fluorescence lines associated with a particular defect, the negatively charged boron vacancy ([Formula: see text]), showing a triplet (S = 1) ground state and zero-field splitting of ~3.5 GHz. We establish that this centre exhibits optically detected magnetic resonance at room temperature and demonstrate its spin polarization under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a step forward in establishing 2D hBN as a prime platform for scalable quantum technologies, with potential for spin-based quantum information and sensing applications.

Charge Carriers Are Not Affected by the Relatively Slow-Rotating Methylammonium Cations in Lead Halide Perovskite Thin Films

Recently, several studies have investigated dielectric properties as a possible origin of the exceptional optoelectronic properties of metal halide perovskites (MHPs). In this study we investigated the temperature-dependent dielectric behavior of different MHP films at different frequencies. In the gigahertz regime, dielectric losses in methylammonium-based samples are dominated by the rotational dynamics of the organic cation. Upon increasing the temperature from 160 to 300 K, the rotational relaxation time, τ, decreases from 400 (200) to 6 (1) ps for MAPb-I₃ (-Br₃). By contrast, we found negligible temperature-dependent variations in τ for a mixed cation/mixed halide FA_0.85MA_0.15Pb(I_0.85Br_0.15)₃. From temperature-dependent time-resolved microwave conductance measurements we conclude that the dipolar reorientation of the MA cation does not affect charge carrier mobility and lifetime in MHPs. Therefore, charge carriers do not feel the relatively slow-moving MA cations, despite their great impact on the dielectric constants.

Efficient Solution Processed CH3NH3PbI3 Perovskite Solar Cells with PolyTPD Hole Transport Layer

The organic and hydrophobic polymer poly[N, N′-bis(4-butilphenyl)-N, N′-bis(phenyl)-benzidine] (polyTPD) represents a promising hole transport layer (HTL) for perovskite photovoltaics due to its suitable energy levels, whereby its highest occupied molecular orbital level matches well with the valence band level of methylammonium lead triiodide (CH3NH3PbI3, MAPbI3) perovskite. However, processing a perovskite layer from the solution on the surface of this organic material, is found to be difficult due to the surface properties of the latter. In this study, we evaluate efficient p-i-n type MAPbI3 perovskite solar cells employing differently processed polyTPD layers. We found that the surface coverage of the MAPbI3 perovskite layer strongly depends on the preparation method of the underlying polyTPD layer. By varying the solvents for the polyTPD precursor, its concentration, and by applying an optimised two-step perovskite deposition technique we increased both the surface coverage of the perovskite layer as well as the power conversion efficiency (PCE) of the corresponding solar cell devices. Our simple solvent-engineering approach demonstrates that no further interface modifications are needed for a successful preparation of efficient planar photovoltaic devices with PCEs in the range of 15 %–16 %.

Excitation and coherent control of spin qudit modes in silicon carbide at room temperature

One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we present room-temperature coherent control of high-dimensional quantum bits, the so-called qudits, associated with vacancy-related spins in silicon carbide enriched with nuclear spin-free isotopes. In addition to the excitation of a spectrally narrow qudit mode at the pump frequency, several other modes are excited in the electron spin resonance spectra whose relative positions depend on the external magnetic field. We develop a theory of multipole spin dynamics and demonstrate selective quantum control of homogeneous spin packets with sub-MHz spectral resolution. Furthermore, we perform two-frequency Ramsey interferometry to demonstrate absolute dc magnetometry, which is immune to thermal noise and strain inhomogeneity.

High-dimensional quantum bits advance the application of quantum sensing and information processing technologies but suffer from the low spectral selectivity and working temperature. Here the authors present the selective excitation and control of spin qudits modes based on an ensemble of silicon vacancy defects in silicon carbide at room temperature.

Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells

We tune the Fermi level alignment between the SnO _x electron transport layer (ETL) and Cs_0.05(FA_0.83MA_0.17)_0.95Pb(I_0.83Br_0.17)₃ and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL-perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge collection efficiency adversely, which increases the hysteresis of PSCs.

Spin colour centres in SiC as a material platform for sensing and information processing at ambient conditions

Atomic-scale colour centres in bulk and nanocrystalline SiC are promising systems for quantum photonics compatible with fiber optics, quantum information processing and sensing at ambient conditions. Colour centres which acts as stable single photon sources in SiC can be key elements for quantum photonics and communications. It has been shown that there are at least two families of colour centres in SiC with S = 1 and S = 3/2, which have the property of optical alignment of the spin levels even at room temperature and above. The spin state can be initialized, manipulated and readout by means of optically detected magnetic resonance (ODMR), level anticrossing and cross-relaxation. Recently, we observed the effects of “hole burning” in the ODMR spectra, which made it possible to narrow the ODMR line by approximately an order of magnitude, which substantially increases the possibilities of technological applications of spin centres.

Impact of Interfaces and Laser Repetition Rate on Photocarrier Dynamics in Lead Halide Perovskites

We studied charge carrier recombination in methylammonium lead iodide (MAPbI₃) perovskite and the impact of interfaces on the charge carrier lifetime using time-resolved photoluminescence. Pristine films and those covered with organic electron and hole transport materials (ETM and HTM) were investigated at various laser repetition rates ranging from 10 kHz to 10 MHz in order to separate the bulk and interface-affected recombination. We revealed two different components in the PL decay. The fast component (shorter than 300 ns) is assigned to interfacial processes and the slow one to bulk recombination. A high repetition pulse train was shown to shorten PL decay in pristine perovskite while significantly prolonging the photocarrier lifetime in MAPbI₃ covered by TMs. This effect can be qualitatively explained with a kinetic model taking interface traps into account. We demonstrate a significant influence of the excitation repetition rate on photocarrier lifetime, which should be considered when studying charge carrier dynamics in perovskites.

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.

Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz^1/2 for a detection volume of approximately 10⁻⁶ mm³. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Identification of Trap States in Perovskite Solar Cells

Thermally stimulated current (TSC) measurements are used to characterize electronic trap states in methylammonium lead iodide perovsite solar cells. Several TSC peaks were observed over the temperature range from 20 K to room temperature. To elucidate the origins of these peaks, devices with various organic charge transport layers and devices without transport layers were tested. Two peaks appear at very low temperatures, indicating shallow trap states that are mainly attributed to the PCBM/C60 electron transport bilayer. However, two additional peaks appear at higher temperatures, that is, they are deeper in energy, and are assigned to the perovskite layer. At around T = 163 K, a sharp peak, also present in the dark TSC measurements, is assigned to the orthorhombic-tetragonal phase transition in the perovskite. However, a peak at around T = 191 K is assigned to trap states with activation energies of around 500 meV but with a rather low concentration of 1 × 10(21) m(-3).

Encounter-limited charge-carrier recombination in phase-separated organic semiconductor blends

The theoretical effects of phase separation on encounter-limited charge carrier recombination in organic semiconductor blends are investigated using kinetic Monte Carlo simulations of pump-probe experiments. Using model bulk heterojunction morphologies, the dependence of the recombination rate on domain size and charge carrier mobility are quantified. Unifying competing models and simulation results, we show that the mobility dependence of the recombination rate can be described using the power mean of the electron and hole mobilities with a domain-size-dependent exponent. Additionally, for domain sizes typical of organic photovoltaic devices, we find that phase separation reduces the recombination rate by less than one order of magnitude compared to the Langevin model and that the mobility dependence can be approximated by the geometric mean.

The effect of diiodooctane on the charge carrier generation in organic solar cells based on the copolymer PBDTTT-C

Microstructural changes and the understanding of their effect on photocurrent generation are key aspects for improving the efficiency of organic photovoltaic devices. We analyze the impact of a systematically increased amount of the solvent additive diiodooctane (DIO) on the morphology of PBDTTT-C:PC₇₁BM blends and related changes in free carrier formation and recombination by combining surface imaging, photophysical and charge extraction techniques. We identify agglomerates visible in AFM images of the 0% DIO blend as PC₇₁BM domains embedded in an intermixed matrix phase. With the addition of DIO, a decrease in the size of fullerene domains along with a demixing of the matrix phase appears for 0.6% and 1% DIO. Surprisingly, transient absorption spectroscopy reveals an efficient photogeneration already for the smallest amount of DIO, although the largest efficiency is found for 3% DIO. It is ascribed to a fine-tuning of the blend morphology in terms of the formation of interpenetrating donor and acceptor phases minimizing geminate and nongeminate recombination as indicated by charge extraction experiments. An increase in the DIO content to 10% adversely affects the photovoltaic performance, most probably due to an inefficient free carrier formation and trapping in a less interconnected donor-acceptor network.

Radiative efficiency of lead iodide based perovskite solar cells

The maximum efficiency of any solar cell can be evaluated in terms of its corresponding ability to emit light. We herein determine the important figure of merit of radiative efficiency for Methylammonium Lead Iodide perovskite solar cells and, to put in context, relate it to an organic photovoltaic (OPV) model device. We evaluate the reciprocity relation between electroluminescence and photovoltaic quantum efficiency and conclude that the emission from the perovskite devices is dominated by a sharp band-to-band transition that has a radiative efficiency much higher than that of an average OPV device. As a consequence, the perovskite have the benefit of retaining an open circuit voltage ~0.14 V closer to its radiative limit than the OPV cell. Additionally, and in contrast to OPVs, we show that the photoluminescence of the perovskite solar cell is substantially quenched under short circuit conditions in accordance with how an ideal photovoltaic cell should operate.

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

Impedance Spectroscopy on Polymer-Fullerene Solar Cells

Impedance spectroscopy is used for studying the electrical transport properties of bulk heterojunction solar cells. A replacement circuit is needed to translate the frequency response of the circuit to the individual interfaces and layers of the solar cell. As a material combination and device architecture, composites of P3HT and PCBM, sandwiched between a transparent ITO front electrode and an aluminum back electrode, as well as a polymer buffer layer were investigated. By varying the film thickness we identified an equivalent circuit capable to fit our experimental data. We found a dielectric constant for the P3HT and for the P3HT:PCBM bulk.

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. Encapsulated modules were shown to be stable against water vapor and oxygen under outdoor conditions, whereas the fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subjected non-encapsulated test cells to extended damp heat exposure at 85 ◦C ambient temperature and 85% relative humidity for various time periods (6 h, 24 h, 144 h, 294 h, and 438 h). In order to understand the origin of the pronounced changes of the cells, we applied temperature-dependent current-voltage and capacitance voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observed the presence of electronic defect states which show an increasing activation energy due to damp heat exposure. The corresponding attempt-to-escape frequency and activation energy of these defect states obey the Meyer-Neldel relation. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface.We also observed changes in the bulk defect spectra due to the damp-heat treatment. - PACS: 73.20.hb, 73.61.Le

Highly-efficient charge separation and polaron delocalization in polymer-fullerene bulk-heterojunctions: a comparative multi-frequency EPR and DFT study

The ongoing depletion of fossil fuels has led to an intensive search for additional renewable energy sources. Solar-based technologies could provide sufficient energy to satisfy the global economic demands in the near future. Photovoltaic (PV) cells are the most promising man-made devices for direct solar energy utilization. Understanding the charge separation and charge transport in PV materials at a molecular level is crucial for improving the efficiency of the solar cells. Here, we use light-induced EPR spectroscopy combined with DFT calculations to study the electronic structure of charge separated states in blends of polymers (P3HT, PCDTBT, and PTB7) and fullerene derivatives (C60-PCBM and C70-PCBM). Solar cells made with the same composites as active layers show power conversion efficiencies of 3.3% (P3HT), 6.1% (PCDTBT), and 7.3% (PTB7), respectively. Upon illumination of these composites, two paramagnetic species are formed due to photo-induced electron transfer between the conjugated polymer and the fullerene. They are the positive, P(+), and negative, P(-), polarons on the polymer backbone and fullerene cage, respectively, and correspond to radical cations and radical anions. Using the high spectral resolution of high-frequency EPR (130 GHz), the EPR spectra of these species were resolved and principal components of the g-tensors were assigned. Light-induced pulsed ENDOR spectroscopy allowed the determination of (1)H hyperfine coupling constants of photogenerated positive and negative polarons. The experimental results obtained for the different polymer-fullerene composites have been compared with DFT calculations, revealing that in all three systems the positive polaron is distributed over distances of 40-60 Å on the polymer chain. This corresponds to about 15 thiophene units for P3HT, approximately three units for PCDTBT, and about three to four units for PTB7. No spin density delocalization between neighboring fullerene molecules was detected by EPR. Strong delocalization of the positive polaron on the polymer donor is an important reason for the efficient charge separation in bulk heterojunction systems as it minimizes the wasteful process of charge recombination. The combination of advanced EPR spectroscopy and DFT is a powerful approach for investigation of light-induced charge dynamics in organic photovoltaic materials.

Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nat. Mater. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

A new approach for probing the mobility and lifetime of photogenerated charge carriers in organic solar cells under real operating conditions

A new transient charge extraction technique is presented, which facilitates simultaneous measurements of mobility and lifetime of photogenerated charge carriers in organic solar cells under real operating conditions. An adaptive field control is implemented keeping the solar cell at open circuit conditions during recombination. The practical benefit of the new technique is demonstrated by determining the mobility-lifetime parameter of solar cells based on PCDTBT:PC(71) BM and P3HT:PC(61) BM.

Electronic Properties of Polymer-Fullerene Solar Cells

We studied the electronic transport properties of conjugated polymer/fullerene based solar cells by means of temperature and illumination intensity dependent current-voltage characteristics, admittance spectroscopy and light-induced electron spin resonance. The short-circuit current density increases with temperature at all light illumination intensities applied, i.e., from 100 mW/cm2 to 0.1 mW/cm2 (white light), whereas a temperature independent behavior was expected. An increase of the open-circuit voltage from 850 mV to 940 mV was observed, when cooling down the device from room temperature to 100 K. The fill factor depends strongly on temperature with a positive temperature coefficient in the whole temperature range. In contrast, the light intensity dependence of the fill factor shows a maximum of 52% at intermediate illumination intensities (3 mW/cm2) and decreases subsequently, when increasing the intensity up to 100 mW/cm2. Further studies by admittance spectroscopy revealed two frequency dependent contributions to the device capacitance. One, as we believe, originates from trapping states located at the interface between composite and metal electrode with an activation energy of EA=180 meV, and the other one is from very shallow bulk states with EA=10 meV. The origin of the latter is possibly the thermally activated conductivity. The photo-generation of charge carriers and their fate in these blends have been studied by light-induced electron spin resonance. We can clearly distinguish between photo-generated electrons and holes in the composites due to different spectroscopic splitting factors (g-factors). Additional information on the environmental axial symmetry of the holes located on the polymer chains as well as on a lower, rhombic, symmetry of the electrons located on the methanofullerene molecules has been obtained. The origin of the signals and parameters of the g-tensor have been confirmed from studies on a hole doped polymer.

Electronic Properties of Polymer-Fullerene Solar Cells StudiedWith Light-Induced Electron Spin Resonance and Admittance Spectroscopy

Within recent years, the development of polymer-fullerene plastic solar cells has made significant progress. In such devices, an efficient charge generation takes place via photoinduced charge transfer between the photoexcited conjugated polymer and acceptor-type fullerene molecules. Due to the paramagnetic nature of the radical species, the photoinduced charge transfer can be studied by means of light induced electron spin resonance (LESR) techniques. We carried out W-band (95 GHz) LESR at high magnetic field strengths. Two well separated line groups with a strong anisotropic structure were detected for the composite MDMOPPV: PCBM. From the line shape analysis, we obtained an environmental axial symmetry for the positive polaron P+ and a lower, rhomboedric symmetry for the fullerene anion. The signals were found to be independent of each other with different spin-lattice relaxation times; hence, the radical species can be investigated separately. In order to study the bulk transport properties, we carried out admittance spectroscopy on the ITO/PEDOT:PSS/MDMO-PPV:PCBM/Al device. Two frequency-dependent contributions to the device capacitance with the activation energies 9 meV and 177 meV were found. For the very shallow trap state, we assume a bulk impurity, whereas the latter one is assigned to an interfacial defect state, located at the composite- aluminium interface.