Readout of a dopant spin in the anisotropic quantum dot with a single magnetic ion

Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate spin readout and optical spin manipulation in such a system. This is due to electron-hole exchange interaction in anisotropic quantum dots, which affects the polarisation of the emission lines. One of the consequences is that the intensity of spectral lines in a single spectrum are not simply proportional to the population of various spin states of magnetic ion. In order to provide a solution of the above problem, we present a method of extracting both the spin polarisation degree of a neutral exciton and magnetic dopant inside a semiconductor quantum dot in an external magnetic field. Our approach is experimentally verified on a system of CdSe/ZnSe quantum dot containing a single Fe²⁺ ion. Both the resonant and non-resonant excitation regimes are explored resulting in a record high optical orientation efficiency of dopant spin in the former case. The proposed solutions can be easily expanded to any other system of quantum dots containing magnetic dopants.

Direct Measurement of Hyperfine Shifts and Radio Frequency Manipulation of Nuclear Spins in Individual CdTe/ZnTe Quantum Dots

We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields B_{z}≳0.1  T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with an optical initialization time of ∼1  ms and polarization lifetime exceeding ∼1  s. Nuclear magnetic resonance spectroscopy of individual dots reveals strong electron-nuclear interactions characterized by Knight fields |B_{e}|≳50  mT, an order of magnitude stronger than in III-V semiconductor quantum dots. Our studies confirm II-VI semiconductor quantum dots as a promising platform for hybrid electron-nuclear spin qubit registers, combining the excellent optical properties comparable to III-V dots and the dilute nuclear spin environment similar to group-IV semiconductors.

Light Emitting Spin Active Electronic States in Ultra-Thin Mn Doped CdSe Layered Nanosheets

The layered nanosheets exhibit a variety of physical and optical properties originating from amalgamation of intra- and inter- layer electronic interactions, which makes them promising materials for advanced devices with varsatile controlling channels. In particular, the dilute magnetic semiconductor multilayered nanosheets have promising optical, electrical and magnetic properties that have been less explored so far. Here, the spin permissible optical properties from solvothermally grown Mn doped CdSe (thickness ~2.26 nm) multilayered nanosheets are reported on. The presence of multi-phase magnetic orderings with a sharp ferromagnetic transition at temperature ~48 K pertinent to the stabilization and co-existence of Mn²⁺ and Mn³⁺ based local phases have been observed from the (Cd,Mn)Se layered nanosheets corroborating to the x-ray absorption near edge structure, electron paramagnetic resonance, Raman scattering and magnetic measurements. The optical absorption and photoluminescence (PL) studies at room temperature affirm wide array of optical properties in the visible regime corresponding to the band edge and intriguing dopant-phase mediated spin approved transitions. The circularly polarized magneto-PL and life time analysis exhibits the spin-polarized fast radiative transitions confirming the presence of spin-active electronic states.

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X(+), X(-)) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting δ1=0.14 meV (δ1=0.47 meV); g-factor g  =  2.12 (g  =  1.71); diamagnetic shift γ=2.5 μeV T(-2) (γ =1.3 μeV T(-2)). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

Magnetic ground state of an individual Fe(2+) ion in strained semiconductor nanostructure

Single impurities with nonzero spin and multiple ground states offer a degree of freedom that can be utilized to store the quantum information. However, Fe(2+) dopant is known for having a single nondegenerate ground state in the bulk host semiconductors and thus is of little use for spintronic applications. Here we show that the well-established picture of Fe(2+) spin configuration can be modified by subjecting the Fe(2+) ion to high strain, for example, produced by lattice mismatched epitaxial nanostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in nearly doubly degenerate ground state with spin projection Sz= ± 2. We provide an experimental proof of this concept using a new system: a strained epitaxial quantum dot containing individual Fe(2+) ion. Magnetic character of the Fe(2+) ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single-iron impurity. We also demonstrate that the Fe(2+) spin can be oriented by spin-polarized excitons, which opens a possibility of using it as an optically controllable two-level system free of nuclear spin fluctuations.

Designing quantum dots for solotronics

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. It has already been shown that optical control of a magnetic ion spin is feasible using the carriers confined in a quantum dot. However, a serious obstacle was the quenching of the exciton luminescence by magnetic impurities. Here we show, by photoluminescence studies on thus-far-unexplored individual CdTe dots with a single cobalt ion and CdSe dots with a single manganese ion, that even if energetically allowed, nonradiative exciton recombination through single-magnetic-ion intra-ionic transitions is negligible in such zero-dimensional structures. This opens solotronics for a wide range of as yet unconsidered systems. On the basis of results of our single-spin relaxation experiments and on the material trends, we identify optimal magnetic-ion quantum dot systems for implementation of a single-ion-based spin memory.

Single-atom dopants embedded in a semiconductor matrix are of potential use for optical, spintronics as well as information storage applications. Here, Kobak et al. realize CdTe and CdSe quantum dots with single cobalt and manganese ions and show how the quantum dot design influences single-spin relaxation time.

Magnetization dynamics down to a zero field in dilute (Cd,Mn)Te quantum wells

The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in the absence of a static magnetic field was found to be up to 3 orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel.

Observation of strong-coupling effects in a diluted magnetic semiconductor Ga1-xFexN

The giant Zeeman splitting of free excitons is measured in Ga(1-x)Fe(x)N. Magneto-optical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe(3+) ions and holes in GaN, N_{0}beta(app)=+0.5+/-0.2 eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.